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Over-atmospheric-pressure chemical vapor deposition device

A technology of chemical vapor deposition and supernormal pressure, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of difficult manufacturing and achieve the effect of improving equipment safety performance and simplifying design

Active Publication Date: 2015-09-30
甘志银
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, people have little research on superatmospheric chemical vapor deposition (Superatmospheric Chemical Vapor Deposition) device, and its manufacture is more difficult. How to design a superatmospheric chemical vapor deposition device with simple manufacturing and high reliability is very important It is of great significance to study the properties of nitride semiconductors and new materials

Method used

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  • Over-atmospheric-pressure chemical vapor deposition device
  • Over-atmospheric-pressure chemical vapor deposition device

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Embodiment Construction

[0010] Embodiments of the present invention are further described below in conjunction with the accompanying drawings, figure 1 is a schematic cross-sectional view of a superatmospheric pressure chemical vapor deposition device according to an embodiment of the present invention. It should be understood that the disclosed figure 1 The components of the superatmospheric pressure chemical vapor deposition device according to an embodiment of the present invention are highlighted, that is to say, these drawings are not intended to illustrate every single component in the superatmospheric pressure chemical vapor deposition device.

[0011] Such as figure 1 As shown, the superatmospheric pressure chemical vapor deposition device of the present invention mainly includes: a pressure-holding shell 1, a pressure-holding chamber 2, a gas introduction part 3, a reaction chamber 4, a reaction chamber shell 5, a carrier tray 6, and a substrate 7 , Carrier tray support 8, heating componen...

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Abstract

The invention discloses an over-atmospheric-pressure chemical vapor deposition device which mainly comprises a shell, a pressure maintaining chamber, a reaction chamber shell and a reaction chamber. By arranging the double-chamber structure composed of the pressure maintaining chamber and reaction chamber, the reaction chamber can be in the negative pressure state relative to the pressure maintaining chamber through the pressure adjustment and setting, so that the reaction chamber becomes a vacuum chamber relative to the pressure maintaining chamber, thereby maintaining the vacuum seal design of the existing vapor deposition device reaction chamber. The chemical vapor deposition device mainly performs pressure vessel design on the pressure maintaining chamber and pressure maintaining shell, thereby greatly simplifying the design of the over-atmospheric-pressure chemical vapor deposition device. Besides, the arrangement of the pressure shell and pressure maintaining chamber adds a protective measure to the reaction chamber to some degree. The gas in the pressure maintaining chamber can use safer gas relative to the reactant gas, thereby enhancing the equipment safety performance.

Description

technical field [0001] The invention relates to the field of semiconductor material manufacturing, in particular to a superatmospheric pressure chemical vapor deposition device. Background technique [0002] Chemical vapor deposition (CVD) technology integrates precision machinery, semiconductor materials, vacuum electronics, fluid mechanics, optics, chemistry, and computer disciplines. It is a high-end semiconductor material with high automation, high price and high technology integration. Special equipment for device manufacturing. As an ideal method for the epitaxial growth of compound semiconductor materials, chemical vapor deposition equipment has the characteristics of high quality, good stability, good repeatability, flexible process, and large-scale mass production. It has become the key core for the production of semiconductor optoelectronic devices and microwave devices in the industry. The equipment has broad application prospects and industrialization value. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/52C23C16/34
Inventor 甘志银胡少林
Owner 甘志银
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