Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for nano-patterning

A nano-pattern and nano-structure technology, applied in the field of preparing periodic nano-array structures, can solve the problems of poor distribution and uniformity of nano-structures

Active Publication Date: 2015-10-21
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI +1
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a nano-patterning method for solving the problem that the surface of the nano-structure prepared in the prior art has an amorphous layer after being damaged by ion bombardment, and the distribution of the nano-structure and the problem of poor uniformity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for nano-patterning
  • Method for nano-patterning
  • Method for nano-patterning

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0040] Please refer to attached picture. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be change...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for nano-patterning. The preparation of structural unit periodically arranges, and the method for nano-patterning includes the steps of providing a monocrystalline material substrate comprised at least two chemical elements; heating the surface or the substrate; irradiating the surface of the substrate by an ion beam to make a vacancy on the surface of the substrate.

Description

technical field [0001] The invention relates to a nano-patterning method, in particular to a method for preparing a periodic nano-array structure, and the period of the prepared structure is at the nanometer level. Background technique [0002] Nanostructure arrays can be applied in various engineering fields, and can be prepared by various methods, for example, using templates and photolithography in the semiconductor industry or using electron beam lithography. However, in photolithography, the resolution of structure preparation is limited by the wavelength of light. Therefore, traditional photolithography is complex and limited in the preparation of small-scale structures. At the same time, electron beam etching adopts the continuous direct writing method for nanofabrication, which is very time-consuming. Therefore, this method is not suitable for large-scale preparation of nanostructure arrays. [0003] As another example, patent DE 199 32 880 A1 describes a method fo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B81C1/00B82Y40/00
CPCB81C1/00031B81C2201/0198G02B5/1857H01L21/2633H01L21/302
Inventor 欧欣斯蒂芬·福斯柯贾棋王曦
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products