A synthetic monoclinic structure vo with low phase transition temperature 2 Methods

A phase transition temperature, VO2 technology, applied in chemical instruments and methods, luminescent materials, etc., can solve the problems of high phase transition temperature and inability to realize up-conversion luminescence, etc., and achieve the effect of lower phase transition temperature and strong intensity

Active Publication Date: 2017-06-06
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the invention is to solve the existing monoclinic structure VO 2 Due to the high phase transition temperature and the inability to realize up-conversion luminescence, a monoclinic structure VO with a low phase transition temperature is provided. 2 Methods

Method used

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  • A synthetic monoclinic structure vo with low phase transition temperature  <sub>2</sub> Methods
  • A synthetic monoclinic structure vo with low phase transition temperature  <sub>2</sub> Methods
  • A synthetic monoclinic structure vo with low phase transition temperature  <sub>2</sub> Methods

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specific Embodiment approach 1

[0032] Specific embodiment 1: This embodiment is a synthesis of monoclinic structure VO with low phase transition temperature 2 The method is done in the following steps:

[0033] One, will Er 2 o 3 and Yb 2 o 3 Add it into nitric acid with a mass fraction of 65% to 68%, then heat it on a universal electric furnace with a power of 500W to 1000W for 10min to 20min, then add distilled water to obtain a mixed solution A;

[0034] Er described in step 1 2 o 3 with Yb 2 o 3 The molar ratio of the substance is 2:(4~10);

[0035] Er described in step 1 2 o 3 The volume ratio of the amount of substance and the mass fraction of 65%~68% nitric acid is 2mol:(2mL~10mL);

[0036] Er described in step 1 2 o 3The volume ratio of the amount of substance to distilled water is 2mol:(5mL~10mL);

[0037] Second, the V 2 o 5 Add oxalic acid and oxalic acid to the mixed solution A, then add distilled water, and stir at a stirring speed of 400r / min-600r / min for 2h-4h to obtain a blue...

specific Embodiment approach 2

[0054] Specific implementation mode two: the difference between this implementation mode and specific implementation mode one is: Er described in step one 2 o 3 The mass fraction is greater than 99.99%. Other steps are the same as in the first embodiment.

specific Embodiment approach 3

[0055] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is: Yb described in step 1 2 o 3 The mass fraction is greater than 99.99%. Other steps are the same as those in Embodiment 1 or 2.

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Abstract

A synthetic method of VO2 (M) with low phase transition temperature relates to a synthetic method of VO2 (M). The purpose of the present invention is to solve the problems of high temperature and incapability of upconversion luminescence of the existing VO2 (M). The method is as below: 1, preparing a mixed solution A; 2, preparing a blue-black mixed solution; 3, preparing dried reactants; 4, placing dried reactants in a tube furnace, and then sintering in a nitrogen atmosphere at the temperature of 550-600 DEG C for 1-2 h, so as to obtain the VO2 (M) with low phase transition temperature. Through doping of Er<3+> and Yb<3+>, the phase transition temperature of VO2 (M) decreases by 35%-45%; the VO2 with lower phase transition temperature obtained by the present invention is capable of converting infrared light into green light with strong intensity under excitation of 980nm laser. The invention obtains the synthetic method of VO2 (M) with low phase transition temperature.

Description

technical field [0001] The invention relates to a synthetic monoclinic structure VO 2 Methods. Background technique [0002] VO 2 There are many middle phases, such as VO 2 (A), VO 2 (B), monoclinic structure VO 2 、VO 2 (R), etc., wherein the monoclinic structure VO 2 The semiconductor-metal phase VO can occur at about 68 °C 2 (R) conversion. Its resistivity, magnetic susceptibility, light transmittance and reflectivity have undergone sudden changes. Due to its significant change, we can put VO 2 It is used in various fields, such as temperature control materials, optical storage, sensors, infrared imaging simulation and temperature control switches. Especially used in temperature control materials, when the room temperature reaches or exceeds VO 2 At the phase transition temperature, the temperature control material VO 2 The infrared transmittance will be reduced to very small, which will play a role in blocking solar heat radiation and reduce the indoor temperat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/69
Inventor 王锐徐欢欢张昱屾徐衍岭李月梅茹毅周建军刘秩桦
Owner HARBIN INST OF TECH
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