Semiconductor laser temperature simulation method based on TEC temperature control

A simulation method and laser technology, applied in the field of optical communication, can solve problems affecting output optical power and wavelength, temperature rise, heat accumulation, etc., and achieve the effect of speeding up the simulation progress and improving the simulation accuracy

Inactive Publication Date: 2015-11-04
SHANDONG UNIV
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Semiconductor lasers are heat-sensitive devices, and their working performance is greatly affected by temperature. If the temperature is not controlled, it will cause heat accumulation and temperature rise, which will affect the power and wavelength of its output ligh

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor laser temperature simulation method based on TEC temperature control
  • Semiconductor laser temperature simulation method based on TEC temperature control
  • Semiconductor laser temperature simulation method based on TEC temperature control

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] A temperature simulation method for semiconductor lasers based on TEC temperature control. Thermal analysis software ANSYS is used to simulate the temperature field of semiconductor lasers. By dynamically controlling the heating or cooling state of TEC, the constant temperature control of TO-CAN package TOSA is realized. The simulated The thermal characteristics of semiconductor lasers under actual working conditions; including the following steps:

[0040] (1) define cell type: utilize the thermal analysis unit SOLID279 of thermal analysis software ANSYS, set the material property of each part of semiconductor laser: comprise thermal conductivity, density and specific heat capacity; Load the 3D model of described semiconductor laser, and the described The 3D model is divided into grids; the thermal analysis software ANSYS is used to manually pick up the adjacent grids sequentially;

[0041] (2) Set the thermal analysis type of ANSYS as transient analysis; define the in...

Embodiment 2

[0045] A kind of temperature simulation method based on the semiconductor laser of TEC temperature control as described in embodiment 1, its difference is that, the step of described dynamic control TEC working state is as follows:

[0046] (2-1) Set an initial temperature InitTemp, a target temperature TarTemp, and a power P of the semiconductor laser; the initial temperature InitTemp is 10°C, and the target temperature TarTemp is 25°C;

[0047] (2-2) Set the initial time Time0, the analysis step size ΔT; the initial time Time0 is 0, and the ΔT is 0.05s;

[0048] (2-3) Compare the initial temperature InitTemp with the target temperature TarTemp:

[0049] If InitTemp is higher than TarTemp, the working state of the TEC is cooling mode;

[0050] If InitTemp is lower than TarTemp, the working state of the TEC is heating mode;

[0051] (2-4) According to step (2-3), the thermal load Kac is set to the cold surface of the TEC, the thermal load Kah is set on the hot surface of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a semiconductor laser temperature simulation method based on TEC temperature control. Thermal analysis software ANSYS is adopted for carrying out temperature field simulation on the semiconductor laser, constant temperature control on TO-CAN packaging TOSA is realized through dynamically controlling a heating or refrigeration state of the TEC, and thermal features of the semiconductor laser in an actual working state are simulated. CAD modeling software SolidWorks is adopted for building a 3D model which can thoroughly and actually reflect TOSA thermal features; the ANSYS is adopted for temperature field simulation, the TEC control is dynamically realized through simulation algorithm, the simulation progress is quickened, and the simulation accuracy is improved. According to the designed simulation algorithm, an accurate temperature result can be simulated at a -20DEG C to 60DEG C external temperature range, and evaluation on packaging and inner optimization of the semiconductor laser during an actual production process can be guided.

Description

technical field [0001] The invention relates to a temperature simulation method of a semiconductor laser based on TEC temperature control, belonging to the technical field of optical communication. Background technique [0002] With the development of optical fiber communication technology, various optical communication devices have entered the practical stage, and are developing towards miniaturization and high integration. As the main light source of optical fiber communication, TO-CAN packaged semiconductor laser is suitable for many fields such as optical fiber communication, biomedicine and military because of its advantages of small size, light weight, low power consumption, easy modulation and convenient use. Semiconductor lasers are heat-sensitive devices, and their working performance is greatly affected by temperature. If the temperature is not controlled, it will cause heat accumulation and temperature rise, which will affect the power and wavelength of its output...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01S5/00
Inventor 刘希路冯德军李琪
Owner SHANDONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products