Silicon-Based Low Leakage Current Cantilever Field Effect Transistor Mixer
A technology of field effect transistors and cantilever beams, which is applied in the field of micro-electromechanical systems, can solve problems affecting the stability of transistors and integrated circuits, and achieve the effects of easy integration, small size, and reduced power consumption
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[0017] The silicon-based low-leakage current cantilever MOSFET mixer of the present invention is composed of a first cantilever grid NMOS transistor 2, a second cantilever grid NMOS transistor 3 and a cantilever switch NMOS tube 4, and the cantilever switch NMOS tube 4 is A silicon dioxide layer 14 is fabricated on the gate of a traditional NMOS transistor, and then a suspended cantilever beam switch 13 is fabricated. The mixer is made on a P-type silicon substrate 1, the lead 5 is made of aluminum, the gates of the first cantilever beam grid NMOS transistor 2 and the second cantilever beam grid NMOS transistor 3 are suspended above the gate oxide layer 6 to form a cantilever The beam gate 7, the two anchor regions 8 of the cantilever beam gate 7 are made of polysilicon on the gate oxide layer 6, the N+ active region 9 forms the source and the drain, and the source and the drain are connected to the lead 5 through the through hole 10, The part of the pull-down electrode 11 und...
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