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Silicon-Based Low Leakage Current Cantilever Field Effect Transistor Mixer

A technology of field effect transistors and cantilever beams, which is applied in the field of micro-electromechanical systems, can solve problems affecting the stability of transistors and integrated circuits, and achieve the effects of easy integration, small size, and reduced power consumption

Active Publication Date: 2017-11-28
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in recent years, the integration scale of chip circuits has become larger and larger, and the heat dissipation and static power consumption of transistors in chips have become more and more serious. Changes in chip temperature will affect the stability of transistors and integrated circuits.

Method used

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  • Silicon-Based Low Leakage Current Cantilever Field Effect Transistor Mixer
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  • Silicon-Based Low Leakage Current Cantilever Field Effect Transistor Mixer

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Embodiment Construction

[0017] The silicon-based low-leakage current cantilever MOSFET mixer of the present invention is composed of a first cantilever grid NMOS transistor 2, a second cantilever grid NMOS transistor 3 and a cantilever switch NMOS tube 4, and the cantilever switch NMOS tube 4 is A silicon dioxide layer 14 is fabricated on the gate of a traditional NMOS transistor, and then a suspended cantilever beam switch 13 is fabricated. The mixer is made on a P-type silicon substrate 1, the lead 5 is made of aluminum, the gates of the first cantilever beam grid NMOS transistor 2 and the second cantilever beam grid NMOS transistor 3 are suspended above the gate oxide layer 6 to form a cantilever The beam gate 7, the two anchor regions 8 of the cantilever beam gate 7 are made of polysilicon on the gate oxide layer 6, the N+ active region 9 forms the source and the drain, and the source and the drain are connected to the lead 5 through the through hole 10, The part of the pull-down electrode 11 und...

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Abstract

The invention provides a silicon-based low-leakage current cantilever field-effect transistor mixer, which uses a differential pair composed of two cantilever grid NMOS transistors to replace the conventional NMOS differential pair in the traditional mixer, and uses a MEMS cantilever beam The NMOS transistor of the switch replaces the conventional NMOS transistor located below the differential pair in the traditional mixer, which reduces the gate leakage current of the transistor in the mixer, reduces the power consumption of the circuit, and the mixer is small and easy to integrate, and In the mixer of the present invention, the cantilever switch NMOS tube located below the differential pair of cantilever beam grid NMOS tubes, if only a DC voltage is applied to the cantilever switch, then the cantilever switch pulls down to touch the NMOS tube under the action of the DC voltage. The gate of the tube, and the NMOS tube is turned on. At this time, it can be considered that the NMOS tube is a constant current source, so the mixer can be used as a differential amplifier at this time, so that the present invention uses the same number of transistors to realize two different functions.

Description

technical field [0001] The invention provides a silicon-based low-leakage current cantilever MOSFET mixer, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] With the continuous development of the integrated circuit design industry, various special-purpose chips and circuits have been designed, and these chips and circuits can realize their own specific functions. However, in recent years, the integration scale of chip circuits has become larger and larger, and the heat dissipation and static power consumption of transistors in chips have become more and more serious. Changes in chip temperature will affect the stability of transistors and integrated circuits. With the rapid development of mobile terminals, the development of battery technology has encountered an unprecedented bottleneck, so the problem of reducing chip power consumption and heat dissipation is particularly important. [0003] The analog mixer circuit is a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03D7/16
Inventor 廖小平陈子龙
Owner SOUTHEAST UNIV
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