Sn-based interconnection material for three-dimension packaging chip stacking

Abstract

The invention discloses a Sn-based interconnection material for three-dimension packaging chip stacking, and belongs to the field of chip interconnection materials. The interconnection material comprises 5-8% of graphene nanoparticles and 6-10% of SiC nanowires, with the balance being Sn. Commercially available Sn powder, mixed rosin resin, thixotropic agent, stabilizer, active assistant agent and activator are fully mixed; then, graphene nanoparticles are added; and finally, SiC nanowires are added, and the materials are fully mixed to prepare a paste-like interconnection material containing graphene nanoparticles and SiC nanowires. Bumps are prepared on the surfaces of chips by a printing method, vertical chip stacking and interconnection is realized at certain pressure (1-10MPa) and temperature (235-260 DEG C), and 'reinforced concrete' solder joints are formed. The interconnection material of the invention has high reliability, and can be used for three-dimension packaging chip stacking.

Description

technical field [0001] The invention relates to a Sn-based interconnection material used for three-dimensional package chip stacking, and belongs to the field of chip interconnection materials. The interconnection material is mainly used in the field of three-dimensional packaging with high reliability requirements, and is a new type of interconnection material with high performance. Background technique [0002] With the rapid development of portable electronic products, electronic devices are gradually developing in the direction of low power, light weight and small package. When the two-dimensional assembly density has reached the theoretical maximum, the three-dimensional packaging chip stacking technology has become a hot spot pursued by the international community. Three-dimensional packaging, that is, stacking chips layer by layer in three-dimensional space, can achieve the dual functions of reducing chip size and improving data transmission speed. [0003] Since th...

AI Technical Summary

Problems solved by technology

Therefore, the three-dimensional packaging structure is prone to early failure due to the two shortcomings above the intermetallic compound solder joints.

Therefore, the development of new 3D packaging interconnection materials is the key to improving the reliability of interconnection solder joints in 3D packaging structures, but there is currently a lack of relevant reports in the international community on this aspect of research.

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