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a bi 2+ Doped near-infrared long afterglow material and its preparation method and application

A technology of foreign ministers and doping elements, used in luminescent materials, material excitation analysis, chemical instruments and methods, etc., can solve problems such as difficulty in optimizing long afterglow properties, short afterglow time, etc., to expand selectivity, promote development, Improve the effect of development space

Inactive Publication Date: 2017-08-25
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Second, there are very few suitable substrates, resulting in a short afterglow time, and it is difficult to optimize the long afterglow properties

Method used

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  • a bi  <sup>2+</sup> Doped near-infrared long afterglow material and its preparation method and application
  • a bi  <sup>2+</sup> Doped near-infrared long afterglow material and its preparation method and application
  • a bi  <sup>2+</sup> Doped near-infrared long afterglow material and its preparation method and application

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The near-infrared long afterglow material of this embodiment, the matrix material is CaSnO 3 The doping ions are Bi, Mo, Y, and the doping amount is 0.5mol%. According to the above components, weigh calcium carbonate, tin dioxide, bismuth oxide, molybdenum oxide, and yttrium oxide respectively, and grind and mix them at 1200 ° C Bake for 2 hours.

[0035] The near-infrared fluorescence spectrum of the sample prepared in this embodiment is as follows: figure 1 As shown, under the excitation of 312nm, the fluorescence of 788nm is emitted, and the luminescence of 788nm corresponds to the excitation peak as figure 1 The excitation spectrum is shown on the left. figure 2 The long afterglow spectrum of the near-infrared long afterglow material prepared in this embodiment is shown for 1 minute after being irradiated with sunlight for 10 minutes, indicating that the material has long afterglow characteristics. image 3 The samples prepared for this example were irradiated u...

Embodiment 2

[0037] The near-infrared long afterglow material of this embodiment, the matrix material is CaSnO 3 The doping ions are Bi, Zr, La, and the doping amount is 5mol%. According to the above components, calcium carbonate, tin oxide, bismuth oxide, zirconium oxide, and lanthanum oxide are respectively weighed, and fired at 1100 ° C after grinding and mixing 4 hours.

[0038] Figure 4 The samples prepared for this example were irradiated under sunlight for 10 minutes to monitor the afterglow attenuation at 788 nm, which shows that the material has a long near-infrared afterglow for a certain period of time.

Embodiment 3

[0040] The near-infrared long afterglow material of this embodiment, the matrix material is SrSnO 3 ; The doping ions are Bi, Nb, Y, and the doping amount is 2 mol%. According to the above ingredients, strontium carbonate, tin dioxide, bismuth oxide, niobium oxide, and yttrium oxide were weighed, ground and mixed, and fired at 1300°C for 4 hours.

[0041] Figure 5 It shows that under the excitation of 298nm, the fluorescence of 808nm is emitted, and the luminescence of 808nm corresponds to the excitation peak as Figure 5 The excitation spectrum is shown on the left. Figure 6 The samples prepared for this example were irradiated under sunlight for 10 minutes to monitor the afterglow attenuation at 808 nm, which shows that the material has a long near-infrared afterglow for a certain period of time.

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Abstract

The invention discloses a Bi2+ doped near-infrared long afterglow material, the matrix material is ASnO3, and the doping elements are Bi, M, N; wherein A is one of Ca and Sr, and M is Mo, Zr, Nb, One of Ti and Cr, N one of Y and La; the range of x is 0.1mol% to 5mol%, the range of y is 0.1mol% to 5mol%, and the range of z is 0.1mol% to 5mol% . The invention also discloses a preparation method and application of the above-mentioned near-infrared long afterglow material. The invention also discloses a preparation method of the above-mentioned near-infrared long afterglow material. The near-infrared long afterglow material of the present invention emits near-infrared long afterglow in the 650-1000nm band, and its emission peak is located near 800nm, and all have a certain afterglow luminescence time.

Description

technical field [0001] The invention relates to near-infrared long afterglow luminescent materials, in particular to a Bi 2+ Doped near-infrared long afterglow material and its preparation method and application. Background technique [0002] A long afterglow material is a luminescent material that can store energy and have a long afterglow emission after the excitation source is turned off. Under the excitation of light sources such as sunlight or ultraviolet light, it absorbs the energy of the external light source and stores it. After the excitation light source is turned off, it is released in the form of visible light at room temperature to form long afterglow luminescence. The main application of long afterglow luminescent materials in the early days was mainly for indicating lighting in dark environments, such as signs for emergency passages, fire hazard passages and other equipment, which are energy-saving and environmentally friendly. In the modern society where r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/66A61K49/00G01N21/64
Inventor 邱建荣秦嬉嬉李杨吴达坤
Owner SOUTH CHINA UNIV OF TECH