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A nanocomposite stacked phase-change film and its preparation method and application

A nano-composite and thin-film technology, applied in the field of microelectronics, can solve the problems of difficult volume shrinkage of multi-layer films, and achieve the effects of improving operational reliability, small volume shrinkage, and fast crystallization speed

Inactive Publication Date: 2017-08-25
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to SnSe 2 The shrinkage rate (17%) is very large, Ga 30 Sb 70 / SnSe 2 The volume shrinkage of multilayer films is hardly better than that of Ge 2 Sb 2 Te 5

Method used

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  • A nanocomposite stacked phase-change film and its preparation method and application
  • A nanocomposite stacked phase-change film and its preparation method and application
  • A nanocomposite stacked phase-change film and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Ge prepared in this example 8 Sb 92 / Ga 30 Sb 70 The total thickness of the nanocomposite stacked phase change film is 50nm, and the general structural formula is [Ge 8 Sb 92 (a) Ga 30 Sb 70 (b)]x, the specific structure is [Ge 8 Sb 92 (30nm) / Ga 30 Sb 70 (20nm)] 1 、[Ge 8 Sb 92 (25nm) / Ga 30 Sb 70 (25nm)] 1 .

[0034] 1. Clean SiO2 2 / / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:

[0035] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 15 minutes to remove dust particles and inorganic impurities on the surface of the substrate;

[0036] (b) The substrate is placed in an acetone solution, and ultrasonically cleaned for 15 minutes to remove organic impurities on the surface of the substrate;

[0037] (c) Place the substrate in deionized water, clean it ultrasonically for 15 minutes, and clean the surface again;

[0038] (d) Take out the substrate, dry it with pure Ar gas, and...

Embodiment 2

[0048] Ge prepared in this example 8 Sb 92 / Ga 30 Sb 70 The total thickness of the nanocomposite stacked phase change film is 50nm, and the specific structure is [Ge 8 Sb 92 (20nm) / Ga 30 Sb 70 (30nm)] 1 、[Ge 8 Sb 92(10nm) / Ga 30 Sb 70 (40nm)] 1 .

[0049] 1. Clean SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:

[0050] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 15 minutes to remove dust particles and inorganic impurities on the surface of the substrate;

[0051] (b) The substrate is placed in an acetone solution, and ultrasonically cleaned for 15 minutes to remove organic impurities on the surface of the substrate;

[0052] (c) Place the substrate in deionized water, clean it ultrasonically for 15 minutes, and clean the surface again;

[0053] (d) Take out the substrate, dry it with pure Ar gas, and set it aside.

[0054] 2. Prepared by sputtering method [Ge 8 Sb 92 (20...

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Abstract

The invention relates to a nanocomposite stacked phase-change film and its preparation method and application. Ge8Sb92 films and Ga30Sb70 films are alternately arranged to form a stacked film structure. The thickness of the Ge8Sb92 film is 10-30nm, and the thickness of the Ga30Sb70 film is 20-40nm; Ge8Sb92 The total thickness of the unit layer formed by thin film and Ga30Sb70 thin film is 50nm, using magnetron sputtering method, on SiO2 / Si(100) substrate, with Ge8Sb92 and Ga30Sb70 as sputtering targets, with Ar as sputtering gas, alternating Deposit Ge8Sb92 thin film and Ga30Sb70 thin film to obtain Ge8Sb92 / Ga30Sb70 nanocomposite stacked phase change thin film material. The invention has fast crystallization speed, which can greatly improve the operating speed of PCRAM; has lower volume shrinkage rate, greatly improves the reliability of the device; higher crystal resistance, can effectively reduce the power consumption of PCRAM operation; has higher crystal Temperature and ten-year data retention temperature can greatly improve the stability of PCRAM.

Description

technical field [0001] The invention relates to materials in the field of microelectronic technology, in particular to a Ge 8 Sb 92 / Ga 30 Sb 70 Nano-composite stacked phase-change thin film and its preparation method and application. Background technique [0002] Phase-change memory technology is a new concept storage technology that has emerged in recent years. It uses phase-change thin film materials as storage media to achieve data storage. It has broad application prospects and is considered to be the most promising next-generation mainstream memory. Compared with other candidate technologies to replace flash memory in the future, PCRAM has the advantages of high reading and writing speed, high reliability, low power consumption, long life, and high cycle times, and is compatible with the COMS process (S.Lai and T.Lowrey: IEDMTech.Dig., 2000, p.243), the technical implementation difficulty and industrial cost are relatively low, and multi-level storage can be realiz...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00B82Y30/00B82Y40/00
Inventor 翟继卫何子芳刘瑞蕊
Owner TONGJI UNIV