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Non-volatile storage system and operation method of storage controller

A non-volatile storage and storage controller technology, applied in static memory, read-only memory, digital memory information, etc., can solve problems such as data loss and charge leakage

Active Publication Date: 2019-11-01
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the charge trapped in the memory region leaks into the channel layer over time, which causes the threshold voltage to drift from the initial state
As a result, the data stored in the CTF storage unit is lost

Method used

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  • Non-volatile storage system and operation method of storage controller
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  • Non-volatile storage system and operation method of storage controller

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Embodiment Construction

[0067] Embodiments will be described in detail with reference to the accompanying drawings. However, the inventive concept may be embodied in various different forms and should not be construed as being limited to only the illustrated embodiments. Rather, these embodiments are provided as examples so that this disclosure will be thorough and complete, and will fully convey the concept of the inventive concept to those skilled in the art. Accordingly, known processes, elements, and techniques related to some embodiments of the inventive concept have not been described. Throughout the drawings and written description, unless otherwise noted, the same reference numerals designate the same elements, and thus descriptions will not be repeated. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity.

[0068] It will be understood that although the terms "first", "second", "third" etc. may be used herein to describe various elements, compo...

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Abstract

Provided are a nonvolatile storage system and an operation method of a storage controller. The nonvolatile storage system includes a storage controller and a nonvolatile storage device having a plurality of storage units. The memory controller is configured to count a clock to generate a current time, program dummy data in a predetermined memory cell of the plurality of memory cells in a power-off state, detect the predetermined memory when a power-on state occurs after the power-off state The cell loses charge and restores the current time based on the detected charge loss.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2014-0057306 filed with the Korean Intellectual Property Office on May 13, 2014, the entire contents of which are hereby incorporated by reference. technical field [0002] The inventive concepts described herein relate to semiconductor memory, and more particularly, to nonvolatile memory systems and methods of operating memory controllers. Background technique [0003] A semiconductor storage device is a storage device manufactured using semiconductors such as but not limited to silicon (Si), germanium (Ge), gallium arsenide (GaAs), and indium phosphide (InP). Semiconductor memory devices are generally classified as either volatile memory devices or nonvolatile memory devices. [0004] Volatile memory devices that lose their stored content when powered off include static RAM (SRAM), dynamic RAM (DRAM), and synchronous DRAM (SDRAM). In contrast, nonvolatile memory devices retain stored contents e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10G11C16/34
CPCG11C7/227G11C11/5628G11C11/5635G11C16/0483G11C16/32G11C2211/5621G11C16/10G11C16/3459G06F3/0604G06F3/0629G06F3/0679G11C16/28G11C16/30
Inventor 金经纶尹翔镛宋基焕
Owner SAMSUNG ELECTRONICS CO LTD