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Method for roughening surface of semiconductor layer, and method for forming LED structure with roughened surface

A surface roughening and semiconductor technology, which is applied in the field of semiconductor layer surface roughening and LED structure formation, can solve problems such as poor stability and uneven etching, achieve good stability, controllable roughness, and improve off-chip quantum efficiency Effect

Inactive Publication Date: 2015-11-25
BYD CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to overcome the shortcomings of uneven etching and poor stability in the prior art

Method used

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  • Method for roughening surface of semiconductor layer, and method for forming LED structure with roughened surface
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  • Method for roughening surface of semiconductor layer, and method for forming LED structure with roughened surface

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Embodiment Construction

[0024] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0025] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "thickness", "upper", "lower", "top", "bottom" etc. is based on the orientation or positional relationship shown in the drawings , is only for the convenience of describing the present invention and simplifying the description, but does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and t...

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Abstract

The present invention puts forward a method for roughening a surface of a semiconductor layer, comprising: forming a solid metal or alloy film on a semiconductor layer; performing annealing for preset time at a preset temperature above the melting point of the metal or alloy to enable the metal or alloy film to be liquefied into a plurality of metal or alloy liquid drops, then cooling to the temperature below the melting point of the metal or alloy to enable the plurality of metal or alloy liquid drops to be condensed into a plurality of metal or alloy island-shaped projections; etching a concave-convex structure on the top surface of the semiconductor layer by taking the plurality of metal or alloy island-shaped projections as mask layers, so as to form a roughened surface; and removing the plurality of metal or alloy island-shaped projections. The method for roughening the surface of the semiconductor layer has the advantages of good uniformity, stability and reliability. The present invention also puts forward a method for forming an LED structure with a roughened surface.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for roughening the surface of a semiconductor layer and a method for forming an LED structure with surface roughening. Background technique [0002] Studies have shown that roughening the surface of a GaN-based LED chip can improve its external quantum efficiency and increase the light efficiency of the chip. The existing conventional process is the nano-microsphere mask etching method. The process is as follows: firstly, epitaxial layers are respectively deposited on the sapphire substrate material: from bottom to top, there are buffer layer, N-type GaN layer, MQW light-emitting layer, and P-type GaN layer. GaN layer; secondly, a dispersant mixed with uniform nanospheres is spin-coated on the P-type GaN layer, such as figure 1 As shown in (a); then roughening is formed by etching technology, in which the role of nano-microspheres is to block ICP etch...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/60H01L33/00H01L33/22
Inventor 张杰彭遥
Owner BYD CO LTD
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