33results about How to "Roughness is easy to control" patented technology

The present invention puts forward a method for roughening a surface of a semiconductor layer, comprising: forming a solid metal or alloy film on a semiconductor layer; performing annealing for preset time at a preset temperature above the melting point of the metal or alloy to enable the metal or alloy film to be liquefied into a plurality of metal or alloy liquid drops, then cooling to the temperature below the melting point of the metal or alloy to enable the plurality of metal or alloy liquid drops to be condensed into a plurality of metal or alloy island-shaped projections; etching a concave-convex structure on the top surface of the semiconductor layer by taking the plurality of metal or alloy island-shaped projections as mask layers, so as to form a roughened surface; and removing the plurality of metal or alloy island-shaped projections. The method for roughening the surface of the semiconductor layer has the advantages of good uniformity, stability and reliability. The present invention also puts forward a method for forming an LED structure with a roughened surface.

The invention discloses a waterproof cloth surface flexible composite material and a preparation method thereof. The waterproof cloth surface flexible composite material is characterized in that one surface of a super-hydrophobic fabric is bonded with a plastic film by using an adhesive to obtain the washable waterproof cloth surface flexible composite material. The preparation method comprises the following steps of diazotizing a fluorine-containing alkyl aniline monomer in a dilute acid solution of sodium nitrite to form fluorine-containing alkyl benzene diazonium salt; carrying out reduction reaction on the fluorine-containing alkylbenzene diazonium salt under the action of a reducing agent to obtain a fluorine-containing alkylbenzene free radical monomer; and carrying out in-situ single-electron free radical covalent graft polymerization reaction on the fluorine-containing alkylbenzene free radical monomer in the fabric fiber to obtain the super-hydrophobic fabric. As the super-hydrophobic fabric obtained through chemical grafting, the fiber surface coating is combined with the fiber through covalent bonds, so that the super-hydrophobic fabric has excellent fastness, the flexibility and the hand feeling of the fabric are not influenced, and the problems of poor fastness and poor hand feeling of the super-hydrophobic fabric obtained through methods such as the coating are solved.

The invention discloses a method for reducing the nucleation density of graphene wafers. The method includes the following steps that firstly, polishing and oxidizing pretreatment is performed on a copper foil surface, and then the graphene wafers are prepared on the treated copper foil surface. The new method for reducing the nucleation density of the graphene wafers is put forward, and the method is simple, convenient, easy to implement and good in effect. Meanwhile, the influences of the roughness and the oxidizing degree of a copper base on the nucleation density of the graphene wafers canbe explored, so that the size of the graphene wafers can be increased further, and the quality of thin graphene films can be improved.

The invention discloses a cold rolled thin steel strip for a battery shell and a production method thereof. The cold rolled thin steel strip is prepared from the following chemical components in percent by mass: 0.006-0.009% of C, 0.20-0.45% of Mn, less than or equal to 0.03% of Si, less than or equal to 0.015% of P, less than or equal to 0.004% of S, less than or equal to 0.004% of N, 0.030-0.045% of Als, 0.030-0.045% of Ti and the balance Fe and inevitable impurities. The cold rolled thin steel strip disclosed by the invention has the advantage that the steel strip is reasonable in proportion of alloy components, relatively low in cost, good in forming performance and excellent in surface quality.

The invention discloses a radiating structure, which comprises a double-layer circuit board, a bottom shell and a radiating fin, wherein the double-layer circuit board comprises a first circuit board and a second circuit board which are mutually fit; the first circuit board is provided with a first opening; the second circuit board is correspondingly provided with a second opening bigger than the first opening; a fixed connection zone is formed between the first opening and the second opening by the first circuit board; the bottom shell is fit below the second circuit board and is correspondingly provided with a third opening with the size equal to that of the second opening; the radiating fin is fixedly arranged below the bottom shell; a metal substrate with an adaptive shape is embedded in the space formed by the second opening and the third opening; the upper surface of the metal substrate is fixedly connected with the fixed connection zone and the lower surface thereof is contacted with the radiating fin; and an electronic component is embedded in the first opening and the radiating part of the electronic component is fixedly connected with the upper surface of the metal substrate. The invention correspondingly provides an electronic device with the radiating structure and a manufacturing method of the radiating structure. The invention has better radiating effect, lower cost and higher product reliability.

The invention provides a semiconductor layer surface roughening method. The semiconductor layer surface roughening method comprises steps: a semiconductor layer is provided, and the semiconductor layer is a nitride semiconductor layer; a solid metal or alloy film is formed on the semiconductor layer; annealing is carried out for preset time at a preset temperature higher than the melting point of the metal or the alloy thus the metal or alloy film is liquefied into a plurality of metal or alloy liquid drops, then the temperature is lowered to a temperature lower than the melting point of the metal or the alloy, thus the plurality of metal or alloy liquid drops are condensed into a plurality of metal or alloy island-shaped projections; the plurality of metal or alloy island-shaped projections are employed as a mask layer, and a concave-convex structure is etched on the layer top surface of the semiconductor and a roughed surface is formed; the plurality of metal or alloy island-shaped projections are removed. The semiconductor layer surface roughening method is advantageous in that the uniformity is good, and the method is stable and reliable. The invention also provides a formation method for an LED structure with a roughened surface.

A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting device; placing a protection layer on the site layer; forming an array of pores through the protection layer and the site layer; and growing on the site layer an oxide layer, having a plurality of rods, each of which is formed in one of the pores. The shapes of the rods can be well controlled by adjusting reactive temperature, time and N₂/H₂ concentration ratio of atmosphere such that the shape and light escape angle of the rods can be changed.

The invention discloses a chalk writable anti-dazzle film. The chalk writable anti-dazzle film comprises a base material and an anti-dazzle coating arranged on the base material; the surface roughnessof the anti-dazzle coating is 0.9-2.5 [mu]m, the anti-dazzle coating is formed by coating the base material with an anti-dazzle coating liquid with the solid content of 40-65%, the anti-dazzle coating liquid contains first anti-dazzle particles, second anti-dazzle particles and third anti-dazzle particles, the particle size of the first anti-dazzle particles is 5-15 [mu]m, and the first anti-dazzle particles account for 50-80% of the total content of the anti-dazzle particles; the particle size of the third anti-dazzle particles is 0.5-3[mu]m, and the third anti-dazzle particles account for 10-25% of the total content of the anti-dazzle particles; and the particle size of the second anti-dazzle particles is 3-5 [mu]m. The chalk writable anti-dazzle film disclosed by the invention is goodin chalk writing effect, good in hardness and wear resistance and relatively good in flash point.

The invention discloses etching solution of a low doped silicon electrode. The etching solution comprises the following main components according to a total weight of the etching :45-65% of sulfuric acid, 1-10% of nitric acid, 1-10% of ammonium fluoride, 1-10% of ammonia chloride, and 5-52% of ultrapure water. The etching solution is capable of, through using the nitric acid with low content, reducing a whole etching rate; through using the ammonium fluoride to replace hydrofluoric acid, guaranteeing the stable etching rate; and adding the ammonia chloride as a replenisher of an ammonium radical ion, generating intensive small bubbles in an etching process, and conveniently controlling roughness on the surface of a silicon electrode. The etching solution is capable of completely removingdamage caused by grinding, stable in etching rate, uniform in etching surface, and controllable in surface roughness.

The invention discloses an etching method of three-dimensional microstructures. The method comprises the steps as follows: a micro-nano particle suspension for inhibiting etching is applied to the surface of a substrate, drying treatment is performed to allow micro-nano particles to be deposed on the surface of the substrate, then the substrate is etched with an etching solution, and the substrate with the three-dimensional concave microstructures is obtained. Multiple concave microstructures are arranged on the surface of the substrate produced with the method, the substrate can be used for sorting and enriching large-flux, mark-free and large-size circulating tumor cells after being produced into a micro-fluidic chip, the capturing capacity for the circulating tumor cells can be improved, and the technical problems that substrates produced with traditional methods are poor in cell adhesion and low in cell capturing efficiency due to smooth surfaces are solved.