Preparation method of high-thermal-conductivity copper for chemical plating on silicon nitride ceramic surface

A technology of silicon nitride ceramics and surface chemistry, applied in the field of ceramic materials, can solve the problems of prone to cracks, mismatching mechanical properties, chipping materials, etc., to improve strength and impact resistance, precise and controllable details, and three waste discharge. less effect

Active Publication Date: 2019-02-19
YANGZHOU FINE ELECTRON TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, whether it is directly ablated by high-power laser or modified by laser irradiation, the thermal effect will instantly cause the melting and vaporization of the material, and the ceramic remelting layer will inevitably be formed, and the ideal microscopic morphology cannot be obtained to ensure the electroless plating. The desired "lock-in effect"
In addition, the remelted layer material usually has the characteristics of high brittleness, its mechanical properties do not match with the ceramic substrate, it is loose and easy to fall off, which seriously affects the bonding force between the metal coating and the ceramic substrate
[0007] The above problems are more prominent when using laser to process silicon nitride ceramics: on the one hand, due to the extremely high hardness of silicon nitride, the strength can be maintained at a high temperature of 1700 °C without falling, and high-power lasers often have to be used to obtain ideal processing effects. Laser, when using high-power laser scanning, cracks, cracks and even material fragmentation are very easy to occur; multiple scanning with lower-power laser pulses may reduce the probability of cracks, but the efficiency is extremely low and the reliability is poor

Method used

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  • Preparation method of high-thermal-conductivity copper for chemical plating on silicon nitride ceramic surface
  • Preparation method of high-thermal-conductivity copper for chemical plating on silicon nitride ceramic surface
  • Preparation method of high-thermal-conductivity copper for chemical plating on silicon nitride ceramic surface

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Effect test

Embodiment 1

[0038] A preparation method for electroless copper plating on the surface of high thermal conductivity silicon nitride ceramics, the specific steps are as follows:

[0039] The silicon nitride ceramic substrate is sequentially processed by tape casting, laser scanning treatment on the surface of the green body, cold water washing, surface protection treatment, pressureless sintering, running water cleaning, degreasing, hot water washing, cold water washing, distilled water washing, chemical copper plating treatment, protection Atmosphere roasting treatment, electroplating copper treatment and anti-oxidation treatment to form a copper film on the surface, of which:

[0040] (1) The main process of tape casting is as follows:

[0041] Weigh 30 g of Si 3 N 4 Fine powder and sintering aid powder (sintering aid accounts for Si 3 N 4 Fine powder weight percentage 10wt%), add 40 grams of organic solvents (dehydrated alcohol and ethyl ketone mix according to 1:2 weight ratio) and ...

Embodiment 2

[0059] A preparation method for electroless copper plating on the surface of high thermal conductivity silicon nitride ceramics. The specific steps are as follows:

[0060] The silicon nitride ceramic substrate undergoes dry pressing molding, surface laser scanning treatment, cold water washing, surface protection treatment, pressureless sintering, running water washing, degreasing, hot water washing, cold water washing, distilled water washing, electroless copper plating treatment, protective atmosphere roasting treatment, electroplating copper treatment and anti-oxidation treatment to form a copper film on the surface, of which:

[0061] (1) The main process of dry pressing is as follows:

[0062] The raw material used is Si 3 N 4 Fine powder, sintering aids are alumina and yttrium oxide powder (weight ratio alumina: yttrium oxide = 1:3), sintering aids are added according to the ratio of 10wt% of raw material weight, and the powder is ball-milled on a planetary ball mill ...

Embodiment 3

[0079] Embodiment 3: A tape-cast silicon nitride green body is selected, the laser scanning power is selected to be 15% (ie 3W), the scanning distance is 0.05mm, the protective atmosphere is nitrogen, the roasting temperature is 350°C, and the rest of the steps are the same.

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Abstract

The invention discloses a preparation method of high-thermal-conductivity copper for chemical plating on the silicon nitride ceramic surface. The preparation method includes preforming of a silicon nitride ceramic green body, laser scanning on the surface of the green body, surface protective treatment , sintering densification treatment, electroless copper plating treatment, and heat treatment inprotective atmosphere. By the preparation method, a flat and smooth metal copper layer with high adhesive force is formed on the surface of the green body, the preparation method is easy to operate,has high processing efficiency, can avoid accumulation of laser heat effect, achieves energy saving, and realizes controllability of roughness of the ceramic surface.

Description

technical field [0001] The invention belongs to the technical field of ceramic materials, and in particular relates to a method for preparing electroless copper plating on the surface of silicon nitride ceramics with high thermal conductivity. Background technique [0002] Silicon nitride (Si 3 N 4 ) Ceramics have the characteristics of high strength, high toughness, corrosion resistance, wear resistance and thermal shock resistance, and are widely used in aerospace, national defense, machinery, chemical and other fields. Metallizing the surface of silicon nitride ceramics can make it have the advantages of high electrical insulation, high mechanical strength, low expansion and high thermal conductivity and weldability of metals. It is widely used in semiconductors , integrated circuits, microwave devices, aerospace and other fields. For silicon nitride ceramics, the surface metallization treatment can also be applied to the packaging of silicon nitride heating element de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/88C04B35/584C04B35/622
CPCC04B35/584C04B35/622C04B41/009C04B41/5127C04B41/88C04B2235/6025
Inventor 叶枫葛林丁锡锋蒋仁会
Owner YANGZHOU FINE ELECTRON TECH
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