Method for reducing nucleation density of graphene wafers

A technology of graphene and core density, applied in gaseous chemical plating, anodic oxidation, coating, etc., can solve problems such as low efficiency, reduced nucleation density, poor operability, etc., to improve production efficiency, reduce risk factors, and improve efficiency high effect

Active Publication Date: 2019-04-12
北京石墨烯技术研究院有限公司
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Existing methods for reducing contamination and roughness on the surface of copper substrates, and methods for controlling the concentration of gaseous carbon sources on the surface of the substrate are inefficient, poor in operability, and unfavorable for large-scale growth of materials
The existing methods of forming a passi

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The steps of the method for reducing the nucleation density of graphene wafers are as follows:

[0035] Step 1. Preparation of polishing liquid: uniformly mix acetic acid and deionized water to obtain an aqueous solution of acetic acid with a concentration of 10% to 90% by weight;

[0036] Step 2. Sample pretreatment: Cut out a copper foil with a size of 1cm*3cm, place the copper foil in an aqueous hydrochloric acid solution with a concentration of 5% by weight and ultrasonically clean it for 5 minutes, then clean it with deionized water, and then place it in isopropanol Or ultrasonic cleaning in a volatile organic solvent for 5 minutes, and finally blow dry with compressed nitrogen;

[0037] Described volatile organic solvent is ethanol or acetone;

[0038] Step 3, electrochemical polishing and oxidation: use acetic acid aqueous solution as electrolyte, Ag / AgCl as reference electrode, platinum sheet as counter electrode, and cleaned copper foil as working electrode to...

Embodiment 2

[0045] The steps of the method for reducing the nucleation density of graphene wafers are as follows:

[0046] Step 1. Preparation of polishing solution: Mix and stir 100mL water, 50mL acetic acid, 50mL alcohol, 10mL isopropanol and 1g urea evenly to prepare the electrochemical polishing solution of acetic acid system;

[0047] Step 2. Sample pretreatment: Cut out a copper foil with a size of 1cm*2cm, place the copper foil in a hydrochloric acid aqueous solution with a concentration of 5% by weight and ultrasonically clean it for 5 minutes, then clean it with deionized water, and then place it in isopropanol Or ultrasonic cleaning in a volatile organic solvent for 5 minutes, and finally blow dry with compressed nitrogen;

[0048] Described volatile organic solvent is ethanol or acetone;

[0049] Step 3, electrochemical polishing and oxidation: use the electrochemical polishing solution as the electrolyte, Ag / AgCl as the reference electrode, the platinum sheet as the counter e...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for reducing the nucleation density of graphene wafers. The method includes the following steps that firstly, polishing and oxidizing pretreatment is performed on a copper foil surface, and then the graphene wafers are prepared on the treated copper foil surface. The new method for reducing the nucleation density of the graphene wafers is put forward, and the method is simple, convenient, easy to implement and good in effect. Meanwhile, the influences of the roughness and the oxidizing degree of a copper base on the nucleation density of the graphene wafers canbe explored, so that the size of the graphene wafers can be increased further, and the quality of thin graphene films can be improved.

Description

technical field [0001] The invention relates to a method for reducing the nucleation density of graphene wafers, and belongs to the field of carbon nanomaterial synthesis. Background technique [0002] Graphene film is a polycrystalline thin structure formed by the joint growth of multiple wafers. The existence of a large number of grain boundaries and rotational mismatches limits the efficient transport of electrons in materials, and also reduces the mechanical properties of materials. Therefore, increasing the size of the wafer can greatly improve the electrical and mechanical properties of graphene materials, which is conducive to expanding its applications in electronic devices, composite materials and other fields. [0003] Starting from the nucleation and growth mechanism of wafers, the preparation of large-scale graphene wafers requires wafers with low nucleation density. At present, there are mainly the following methods to reduce the nucleation density of graphene...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C16/02C23C16/26C25F3/22C25D11/34
CPCC23C16/02C23C16/0254C23C16/26C25D11/34C25F3/22
Inventor 张儒静何利民许振华李娜汤智慧
Owner 北京石墨烯技术研究院有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap