Processing chamber and method for detecting processing environment of processing chamber
A process chamber and process technology, applied in the field of process chambers, can solve problems such as the increase of the K value of the dielectric material, the deterioration of the hydrophobicity of the surface of the dielectric material, and the plasma damage of the ultra-low dielectric constant material, so as to prevent the damage. Effect
Active Publication Date: 2015-11-25
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology
[0004] When the pre-cleaning process is performed, it is easy to cause plasma damage to the ultra-low dielectric constant material. Even if a reducing gas such as H2 is used as the process gas for chemical reaction pre-cleaning, it is easy to damage the components and properties of the ultra-low dielectric constant material. Properties are affected, most of which are manifested in the increase of the K value of the dielectric material and the deterioration of the hydrophobicity of the surface of the dielectric material, etc.
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[0032] In order to solve the problem of ion current damage to ultra-low dielectric constant materials, a new process chamber is proposed to realize real-time detection, and then stop the process when the ion current density exceeds the normal value to avoid unqualified products.
[0033] The technical features and advantages of the present invention will be described in more detail below by taking the pre-cleaning chamber as an example (that is, the process chamber is a pre-cleaning chamber) and in conjunction with the accompanying drawings.
[0034] see figure 1 as shown, figure 1 It is a schematic diagram of the structure of the pre-cleaning chamber in the working state. The pre-cleaning chamber 100 includes a cavity 110, a screen structure 180, a heater 130, a heating base 140 (Heater), a radio frequency system 150, a helicoidal coil 160 and quartz Top 170.
[0035] The toroidal coil 160 is installed on the quartz top 170. In this embodiment, the radio frequency system 15...
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Abstract
The invention relates to a processing chamber and a method for detecting processing environment of the processing chamber. A device for detecting the processing environment of the processing chamber is arranged in the processing chamber. The device comprises a detector and a detection circuit. The detection circuit comprises a voltage-stabilizing power supply and a test resistor. One end of the voltage-stabilizing power supply is grounded, and the other end of the voltage-stabilizing power supply is electrically connected with one end of the test resistor. The other end of the test resistor is electrically connected with the detector. The detector is arranged in the internal part of the cavity of the processing chamber. The detector is used for detecting ion flow density in the processing chamber. The working steps of the method for detecting the processing environment of the processing chamber are listed as follows: processing is started, and voltage of the two ends of the test resistor is measured after plasmas are generated in the processing chamber through excitation; and then ion flow density in the processing chamber is calculated according to the measured voltage and compared with range of normal values of ion flow density. According to the processing chamber and the method, the objective of detecting the processing environment of the chamber in real time can be achieved.
Description
technical field [0001] The invention relates to the field of semiconductor production, in particular to a process chamber in the field of semiconductor production. Background technique [0002] In the prior art, the precleaning (Preclean) technology is a very important part in the copper interconnection process, and the precleaning ensures the reliability of the device. [0003] At the 28nm technology node, ultralow dielectric constant materials (ultralowkmaterial, k<2.5) will be used as the material for making the dielectric layer. However, ultralow dielectric constant materials are usually loose in structure, very soft, and porous, such as the common SiOCH. [0004] When the pre-cleaning process is performed, it is easy to cause plasma damage to the ultra-low dielectric constant material. Even if a reducing gas such as H2 is used as the process gas for chemical reaction pre-cleaning, it is easy to damage the components and properties of the ultra-low dielectric constant...
Claims
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Login to View More IPC IPC(8): H01L21/67H01L21/66
Inventor 赵可可
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD