Semi-floating gate transistor structure and fabrication method thereof

Abstract

The present application provides a semi-floating gate transistor structure and a manufacturing method thereof. The semi-floating gate transistor structure includes: a substrate with a first N well region and a second N well region isolated from each other; a gate oxide layer arranged on the surface of the substrate and having a spacer groove, and the spacer groove is arranged on the first N well region. The well region is located on the surface of the substrate; the floating gate is arranged on the surface of the substrate, and the inside is doped with P-type impurity ions, and the floating gate includes: a first floating gate part, which is filled with interval grooves; a second floating gate part , arranged integrally with the first floating gate part, and arranged on the surface of the first floating gate part and the exposed gate oxide layer. The floating gate doped with P-type impurity ions forms a pn junction diode and is located above the surface of the substrate, so the substrate does not need to be etched to avoid damage to the lattice structure caused by etching the substrate and the failure of the semi-floating gate transistor. Problems with leakage current and increased power consumption.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, in particular, to a semi-floating gate transistor structure and a manufacturing method thereof. Background technique [0002] Non-volatile memory means that the data can still be saved without being lost when the chip is not powered. Data writing or erasing of this device requires a current to pass through a layer of silicon oxide medium with a thickness of only a few nanometers, so a high operating voltage (~20V) and a long time (microsecond level) are required. [0003] Zhang Wei and others recently proposed to combine the tunneling field effect transistor (TFET) and the floating gate device to form a new "semi-floating gate" structure device, such as figure 1 As shown, the device is called "semi-floating gate transistor" (Semi-Floating gate transistor, SFG), and the research results were published in the American "Science" magazine on August 9, 2013. Compared wi...

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Problems solved by technology

[0012] The purpose of this application is to provide a semi-floating gate transistor structure and its manufacturing method to solve the problem that the etching process damages the lattice structure of the substrate, resulting in increased leakage current and power consumption of the semi-floating gate transistor structure.

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