Three-dimensional stereo high-density film multi-layer capacitor and preparation method thereof

Abstract

The invention discloses a three-dimensional stereo high-density film multi-layer capacitor. The capacitor comprises a substrate, an insulating film, a multi-layer capacitance function layer film, an insulating layer, an insulating passivation layer, a metal connecting layer, and a plate electrode. The insulating passivation layer covers the multi-layer capacitance function layer film. The plate electrode is connected to conductive plate films of the capacitor. The invention also discloses a preparation method of the above capacitor. The three-dimensional stereo high-density film multi-layer capacitor is manufactured through the steps of etching of the substrate, deposition of the insulating layer, deposition of the insulating passivation layer through a capacitance function layer, etc. The method is simple in process, and a multi-layer capacitance thin-film device can be formed without multiple times of lithography. The layers of films are not restricted. In an ideal condition, the layers of the capacitance function layer film can be freely set to be a finite number as long as the size of the capacitor is large enough, and the cost will not be increased substantially. Films can be adjusted to be distributed mostly in a vertical space, so the size of the capacitor can be greatly reduced. The capacitor is manufactured by a semiconductor film technology, is tolerant to environment, and exhibits high reliability.

Description

technical field [0001] The invention relates to a three-dimensional capacitor, in particular to a three-dimensional high-density film deposition capacitor. Background technique [0002] In the prior art, the three-dimensional capacitor disclosed in US Patent No. US6689643A has a single-layer capacitive functional layer film structure, and is formed in the form of grooves. Three-dimensional capacitance is realized by forming a group of independent capacitors that share the same bottom electrode. The area of ​​the top electrode of these independent capacitors is an integer multiple of the area of ​​other electrodes, so that they can be combined to manufacture capacitors of various ranges. [0003] In the prior art, there is also a manufacturing process of a three-dimensional capacitor that adopts a multilayer film structure and does not have grooves. Aluminum and ruthenium electrodes with highly selective etching capabilities are used to manufacture multilayer thin film capac...

AI Technical Summary

Problems solved by technology

It can be seen that the three-dimensional integration point is easy to adopt the method of multilayer film and groove, but the container process of the integration point is complicated, and multiple photolithography is required to form a multilayer capacitive thin film device

Images