The invention discloses a thin film transistor, a production method and a liquid crystal display panel thereof, wherein the thin film transistor comprises a grid electrode, a grid insulating layer, a semiconductor layer, a source electrode and a drain metalizing layer, wherein the grid electrode and the grid insulating layer are arranged on a base plate, and the grid insulating layer covers the grid electrode, the semiconductor layer is arranged on the grid insulating layer, the source electrode and the drain metalizing layer are located on two sides of the semiconductor layer, a first conductor layer, a second conductor layer and a third conductor layer are provided, and each conductor layer is arranged on the semiconductor layer in turn. The lower surface of the first conductor layer is completely contacted with the upper surface of the semiconductor layer without exposure, the upper surface of the first conductor layer is partially exposed on the second conductor layer, and the lower surface of the third conductor layer is completely contacted with the upper surface of the second conductor layer without exposure. The invention can effectively control the channel width of the thin film transistor in a process, further keeps the process quality of the thin film transistor, and has the advantages of no needing to buy extra process devices, and being compatible with a tradition process.