Warming junction-pushing diffusion technology

A diffusion process and heating rate technology, applied in the field of solar cells, can solve the problem that the gettering effect of the substrate is not particularly significant, and achieve the effect of optimizing the phosphorus diffusion process, improving the gettering ability, and improving the gettering effect

Inactive Publication Date: 2015-12-02
JIANGXI UNIEX NEW ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the constant temperature diffusion process currently used has a good effect on the preparation of PN junctions during phosphorus diffusion, the gettering effect on the substrate is not particularly significant.

Method used

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  • Warming junction-pushing diffusion technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The specific steps of the temperature-rising push-junction diffusion process are as follows:

[0022] (1) START. The time is 10s, the temperature is 780°C, and the maximum nitrogen flow rate is 8L / min.

[0023] (2) Enter the boat. The time is 650s, the temperature is 780°C, the maximum nitrogen flow rate is 8L / min, and the speed of entering the boat is 400mm / min.

[0024] (3) Heat up. The time is 600s, the temperature is 780°C, and the maximum nitrogen flow rate is 18L / min.

[0025] (4) Pre-oxidation. The time is 500s, the temperature is 780°C, the maximum nitrogen flow rate is 16L / min, and the oxygen flow rate is 2L / min.

[0026] (5) deposition. The time is 1000s, the temperature is 790~810°C, the maximum nitrogen flow rate is 15.9L / min, the small nitrogen flow rate is 1.4L / min, and the oxygen flow rate is 0.7L / min.

[0027] (6) Push the knot. The time is 600s, the temperature is 830~860°C, and the maximum nitrogen flow rate is 18L / min.

[0028] (7) cooling. ...

Embodiment 2

[0032] The specific steps of the temperature-rising push-junction diffusion process are as follows:

[0033] (1) START. The time is 5s, the temperature is 780°C, and the maximum nitrogen flow rate is 8L / min.

[0034] (2) Enter the boat. The time is 700s, the temperature is 780°C, the maximum nitrogen flow rate is 8L / min, and the speed of entering the boat is 300mm / min.

[0035] (3) Heat up. The time is 700s, the temperature is 780°C, and the maximum nitrogen flow rate is 20L / min.

[0036] (4) Pre-oxidation. The time is 500s, the temperature is 780°C, the maximum nitrogen flow rate is 18L / min, and the oxygen flow rate is 2L / min.

[0037] (5) deposition. The time is 1000s, the temperature is 790~810°C, the large nitrogen flow rate is 17L / min, the small nitrogen flow rate is 1.5L / min, and the oxygen flow rate is 1.5L / min.

[0038] (6) Push the knot. The time is 600s, the temperature is 830~860°C, and the maximum nitrogen flow rate is 20L / min.

[0039] (7) cooling. The t...

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PUM

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Abstract

The invention discloses warming junction-pushing diffusion technology comprising steps of: (1) boat in; (2) fast increasing temperature; (3) pre-oxidation; (4) warming deposition; (5) warming junction pushing; (6) cooling; and (7) boat out. Warming diffusion is carried out under a low-temperature condition and junction pushing is carried out under a high-temperature condition such that a deep junction with low surface concentration is formed and a conversion efficiency is increased by over 0.2 percent.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a temperature-rising push-junction diffusion process. Background technique [0002] At present, the production process of solar cells mainly includes cleaning texture, diffusion, etching, PECVD, screen printing and sintering. In the main manufacturing process of solar cells, the surface concentration, junction depth and square resistance uniformity of the diffused silicon wafer directly affect the electrical properties of the solar cell. , forming a PN junction, which is the core of the solar cell and plays a vital role in the photovoltaic conversion efficiency. Although the currently used constant temperature diffusion process has a good effect on the preparation of PN junctions during phosphorus diffusion, the gettering effect on the substrate is not particularly significant. This is because the release and diffusion of impurities in the phosphorus gettering process req...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02P70/50
Inventor 曹江伟张广路杨晓琴易敏华
Owner JIANGXI UNIEX NEW ENERGY CO LTD
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