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Method and system for checking floating of grid of MOS field effect transistor in circuit

A field effect transistor and inspection circuit technology, which is applied in the field of MOS field effect transistor grid suspension in inspection circuits, can solve the problems of slow inspection speed, low efficiency, and large amount of calculation, and achieves fast inspection speed, high inspection efficiency, and elimination of hidden effect

Active Publication Date: 2015-12-09
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Description
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  • Application Information

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Problems solved by technology

[0005] However, with the continuous improvement of the function and performance requirements of electronic products, the design of integrated circuits has become more and more complex. The number is difficult to determine. The above inspection method needs to trace the source of each branch one by one. The calculation is very large, the inspection speed is very slow, and the efficiency is relatively low.

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  • Method and system for checking floating of grid of MOS field effect transistor in circuit
  • Method and system for checking floating of grid of MOS field effect transistor in circuit
  • Method and system for checking floating of grid of MOS field effect transistor in circuit

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Embodiment Construction

[0032] The core of the technical solution of the present invention is: the signal applied to the PAD end of the circuit is transmitted from the PAD end to the end of the circuit (i.e. the end of each branch of the circuit). After receiving this signal, it is judged whether the gate voltage of each MOS transistor in the circuit can be controlled by the signal applied to the PAD end of the circuit. If it can, it is judged that the state of the gate of the MOS transistor is normal and not suspended; if not, it is judged that the MOS transistor is The gate of the tube is Floating.

[0033] In order to make the purpose and features of the present invention more obvious and understandable, the specific implementation of the present invention will be further described below in conjunction with the accompanying drawings. However, the present invention can be implemented in different forms and should not be limited to the described embodiments.

[0034] Please refer to figure 1 , taki...

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Abstract

The invention provides a method and system for checking floating of a grid of an MOS field effect transistor in a circuit. A corresponding PAD signal is applied to a PAD end of the circuit, the applied PAD signal is transmitted from the PAD end along each branch of the circuit to tail ends of the circuit, other electronic elements are balanced out in the transmission process, and only in this way, whether the grid voltage of each MOS transistor passed through by the PAD signal is controlled by the PAD signal is judged, and whether the grid of each MOS transistor passed through by the PAD signal is floating is checked rapidly, so that hidden risks are eliminated for circuit design. A grid connection branch of each MOS transistor does not need to be traced in the whole checking process, the checking is relatively simple, the checking speed is relatively high, the checking efficiency is relatively high, and the checking method and system are especially suitable for the design of an analog integrated circuit.

Description

technical field [0001] The invention relates to the technical field of integrated circuit design, in particular to a method and a system for checking the floating gate of a MOS field effect transistor in a circuit. Background technique [0002] Integrated circuits involve the establishment of models of electronic devices (such as transistors, resistors, capacitors, etc.), and interconnection lines between devices. All devices and interconnection lines need to be placed on a semiconductor substrate material, and these components are placed on a single silicon substrate through a semiconductor device manufacturing process (such as photolithography, etc.) to form a circuit. Among them, PN junctions and MOS transistors (i.e. Metal-Oxide-Semiconductor Field-Effect-Transistor, Metal-Oxide-Semiconductor Field-Effect-Transistor) constitute the basic structure of integrated circuit devices, and MOS Field Effect Transistors rely on their low cost, Due to the advantages of low static ...

Claims

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Application Information

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IPC IPC(8): G01R31/316
Inventor 曹云于明
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP