Mask and fabrication method of thin film transistor

A mask, light-transmitting area technology, applied in the manufacture of semiconductor/solid-state devices, photoengraving process of patterned surface, originals for opto-mechanical processing, etc. , to avoid the effect of short circuit

Inactive Publication Date: 2015-12-09
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a mask plate and a method for manufacturing

Method used

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  • Mask and fabrication method of thin film transistor
  • Mask and fabrication method of thin film transistor
  • Mask and fabrication method of thin film transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] An embodiment of the present invention provides a mask, which may specifically be a single-slit mask, a halftone mask (HalfToneMask, HTM for short), or a gray scale mask (HalfToneMask, GTM for short). In this embodiment, a single slit mask is taken as an example for illustration, as figure 2 and image 3 As shown, the single slit mask includes an opaque region, a partially transparent region (single slit region) and a fully transparent region.

[0040] The opaque area includes a source pattern 101 and a drain pattern 102 corresponding to the source and drain of the thin film transistor, and may also include various patterns corresponding to data lines and other lines in the edge area. The fully light-transmitting area corresponds to patterns other than traces such as sources, drains, channels, and data lines of the thin film transistors.

[0041] The partially transparent region includes a channel pattern corresponding to the channel of the thin film transistor. The...

Embodiment 2

[0046] Such as Figure 4 and Figure 5 As shown, the embodiment of the present invention provides a single-slit mask, which is basically the same as the first embodiment, including an opaque region, a partially transparent region (single slit region) and a fully transparent region. Among them, the opaque area includes graphics such as source pattern 201 and drain pattern 202; the fully light-transmitting area corresponds to patterns other than the source, drain, channel, and data lines of the thin film transistor; the partially light-transmitting area It includes a horseshoe-shaped channel pattern, and the width of the bent portion 203 of the channel pattern is greater than the width of the straight extension portion 204 .

[0047] The difference between this embodiment and the first embodiment is that, in this embodiment, a notch 2030 is formed on the inner edge of the bent portion 203 , so that the width of the bent portion 203 is greater than the width of the straight exte...

Embodiment 3

[0050] An embodiment of the present invention provides a method for manufacturing a thin film transistor, which can be applied in the manufacturing process of an array substrate using a 4-step patterning process. As a preferred solution, the width of the channel of the thin film transistor is less than 4 microns.

[0051] The manufacturing method includes:

[0052] S1: forming a gate by using a patterning process.

[0053] This step can be performed by using a common mask and a conventional patterning process, and will not be described in detail here.

[0054] In addition, after this step is completed, a gate insulating layer needs to be formed on the gate.

[0055] S2: Forming source, drain and channel by patterning process. Specifically include:

[0056] S21: sequentially forming a semiconductor layer and a source-drain metal layer on the gate insulating layer.

[0057] S22: Coating a photoresist on the source-drain metal layer, and using the mask provided in the first ...

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Abstract

The invention discloses a mask and a fabrication method of a thin film transistor, belonging to the technical field of displays and solving the technical problem of low yield when a channel width is relatively small. The mask comprises a light-proof region, a partial transmitting region and a full transmitting region, wherein the partial transmitting region comprises a channel pattern of the thin film transistor, the channel pattern is shaped like a horseshoe and comprises a buckling part and two straight line extension parts, and the width of the buckling part is greater than the width of each straight line extension parts.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for manufacturing a mask plate and a thin film transistor. Background technique [0002] With the development of display technologies, liquid crystal displays have become the most common display devices. Wherein, a thin film transistor (Thin Film Transistor, TFT for short) is an important component in a liquid crystal display, which is formed on an array substrate. [0003] At present, in order to save process costs, more and more array substrates are manufactured by a 4-pass patterning process (4mask), that is, only 4 masks can be used to complete the manufacture of the array substrate. Thin film transistors are mainly composed of gate, source, drain, and channel. In the four patterning processes, the source, drain, and channel are formed in the same patterning process, and the single slit mask is used to form the thin film transistor. Template (SingleSlitMask, SSM) ...

Claims

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Application Information

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IPC IPC(8): G03F1/32H01L21/336
Inventor 莫超德
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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