An Exposure Carrier for Improving Wafer Deformation

Abstract

The invention relates to the field of semiconductors, in particular to an exposure stage for improving wafer deformation. The present invention is applied to the process of exposing the silicon wafer above the loading table through an exposure machine. The silicon wafer is placed directly above the loading table. layer, the friction coefficient μ of the coating is 0.4-0.8, and the thermal conductivity λ of the coating is 20-400W / m.k.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an exposure stage for improving wafer deformation. Background technique [0002] At present, an exposure process is generally required in the production and processing of semiconductors. During the exposure process, the wafer often needs to be heated. Due to the heat from the heat source, the thermal expansion of the silicon wafer of the wafer will be highlighted. [0003] In the prior art, the surface of the semiconductor exposure machine carrier table is generally coated with a surface coating, which is generally made of carbon fiber composite material, and its friction coefficient is relatively small, generally about 0.05-0.2, and its thermal conductivity is also low. , generally less than 20W / m.k, figure 1 It is a schematic diagram of the structure of the loading table in the prior art of the present invention, such as figure 1 As shown, first place the silicon wafer 2 directl...

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Problems solved by technology

[0003] In the prior art, the surface of the semiconductor exposure machine carrier table is generally coated with a surface coating, which is generally made of carbon fiber composite material, and its friction coefficient is relatively small, generally about 0.05-0.2, and its thermal conductivity is also low. , generally less than 20W / m.k, figure 1 It is a schematic diagram of the structure of the loading table in the prior art of the present invention, such as figure 1 As shown, first place the silicon wafer 2 directly above the slide table 1 through the moving arm, and the vacuum hole 3 absorbs the silicon wafer instantaneously. Due to the tight fit and no expansion, the peripheral silicon wafer 2 expands outwards and causes horizontal deformation, resulting in deviations in alignment accuracy, which cannot meet the requirements of high-precision production processes.

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