An Insulated Gate Bipolar Device Using a Surface Voltage Resistant Layer Structure

Abstract

A terminal surface voltage-sustaining region structure of an insulated gate bipolar transistor and thyristor has a p-type semiconductor voltage-sustaining layer (168) which is arranged between a device cellular region (122) and an n+ field cut-off region (400); an insulation dielectric layer (800) is arranged on the p-type semiconductor voltage-sustaining layer (168), and a diode is arranged on the insulation dielectric layer (800); the diode consists of a p+ anode region (902), a semiconductor region (901) and an n+ cathode region (903) which are connected in order. The insulated gate bipolar device of the present invention utilizes a gate-to-source voltage (VGK) of the device cellular region to generate a control signal directly or indirectly through the surface voltage-sustaining region so as to control an emitter junction voltage (VAB) of the device, thereby achieving the purposes of eliminating a tail current during turn-off of the device and quickly turning off the device.

Description

technical field [0001] The invention relates to semiconductor high-voltage device and power device technology, in particular to a bipolar device and a thyristor whose surface withstand voltage region is used in insulating gate control. [0002] references [0003] [1] "HIGH SPEED IGBT", U.S. Patent, US 20100219446A1; [0004] [2] "BOTH CARRIERS CONTROLLED THYRISTOR", PCT / CN2011 / 083710; [0005] [3] "A Surface Voltage Sustaining Structure for Semiconductor Devices", Chinese Patent ZL 95108317.1, or "Surfacevoltage sustaining structure for semiconductor devices", US 5,726,469; [0006] [4] "Low Voltage Power Supply", ZL 201010000034.2, U.S.8294215B2. Background technique [0007] As we all know, ordinary IGBTs have severe current tailing during the turn-off process. Existing measures to improve the switching speed of IGBT mainly include the method of anode short circuit, the method of reducing the lifetime of unbalanced carriers in the withstand voltage region, and the met...

AI Technical Summary

Problems solved by technology

In fact, at the beginning of IGBT turn-off, the voltage V between the anode and cathode AK is very small, so the potential induced on the p-region 500 is also very small; moreover, at V AK When it is very small, the p-type surface withstand voltage region 168 and n - The depletion region between the type substrate region 101 is very thin, so there is a large differential capacitance between these two regions, and most of the current flowing through the surface withstand voltage region is used for charging and discharging the capacitance, so that p The magnitude of the voltage induced on area 500 is very small and compared to V GK The voltage change has a large delay

Images