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Performance improved circuit of power MOSFET switch

A power switch and circuit technology, applied in output power conversion devices, electrical components, etc., can solve the problems of reducing system energy conversion efficiency, MOSFET damage, large system electromagnetic interference, etc., to increase switch reliability and reduce switch capacitance. , the effect of reducing loss

Inactive Publication Date: 2015-12-16
上海紫竹新兴产业技术研究院 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the switch is turned on, the output capacitor of the power MOSFET switch will release energy, generate power consumption, and reduce the energy conversion efficiency of the system. At the same time, during the switching process, the larger the output capacitor is, the larger the peak current will be, which may damage the MOSFET. , and the greater the peak current, the greater the electromagnetic interference to the system

Method used

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  • Performance improved circuit of power MOSFET switch

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Embodiment

[0017] Such as figure 1 As shown, the performance improvement circuit of the power MOSFET switch involved in the present invention includes a MOSFET switch, a source unidirectional functional module and a drain level unidirectional functional module.

[0018] The gate of the power MOSFET switch is connected to the driving chip, and the pulse signal is input into the driving chip to control the on and off of the MOSFET.

[0019] The source unidirectional circuit module of the power MOSFET switch is a diode D1, the anode of which is connected to the power supply voltage, and the cathode is connected to the source of the power switch.

[0020] The drain unidirectional circuit module of the power MOSFET switch is a diode D2, the anode of which is connected to the drain of the power switch, and the cathode is connected to the load.

[0021] The load of the power MOSFET switch is equivalent to a parallel connection of a load resistor RL and a load capacitor CL, one end of the load ...

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Abstract

The invention relates to a performance improved circuit of a power MOSFET switch. The circuit is connected to a supply voltage, a driving chip and a load. The improved circuit is characterized by comprising a power switch, a source electrode unilateralizition circuit module and a drain electrode unilateralizition circuit module, wherein a grid electrode of the power switch is connected to the driving chip, a source electrode of the power switch is connected to the supply voltage through the source electrode unilateralizition circuit module, and a drain electrode of the power switch is connected to the load through the drain electrode unilateralizition circuit module. Compared with the prior art, the performance improved circuit has the advantages that reverse discharge of a power MOSFET switch is prevented and the total capacitance of the power MOSFET switch is reduced, so the speed of the switch is increased, the loss of the switch is reduced, the reliability of the switch is improved, the electromagnetic interference is minimized, etc.

Description

technical field [0001] The invention relates to a power MOSFET switch, in particular to a circuit for improving the performance of the power MOSFET switch. Background technique [0002] Power MOSFET switches are often used in high-power switching power supplies and high-voltage high-repetition frequency pulse sources. The switching tube is controlled by the circuit to conduct high-speed conduction and cut-off, and the DC power is converted into high-frequency AC power for the transformer to transform, thereby generating the required One or more sets of voltages. Therefore, the speed of the power switch determines the operating frequency of the power supply, and the energy consumption of the power switch also affects the energy conversion efficiency of the power supply. [0003] The main factor affecting the switching speed of power MOSFET is the distributed capacitance of MOSFET. The smaller the distributed capacitance of the MOSFET, the shorter the charging and dischargin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/44
Inventor 袁斌毛军发李晓春彭天昊刘楠楠李翀郎少波曾天民
Owner 上海紫竹新兴产业技术研究院
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