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A silicon-based tunable polarization rotation device

A technology for rotating devices and devices, which is applied in the field of silicon-based adjustable polarization rotating devices, can solve the problems of large device size and complex structure, and achieve the effects of large optical bandwidth, simple adjustment, and simple structure

Active Publication Date: 2018-05-15
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI +1
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  • Abstract
  • Description
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Problems solved by technology

[0006] In view of this, the present invention solves the shortcomings of the traditional adjustable polarization rotation device with complex structure and excessive device size, and intends to use a symmetrical polarization rotation separation device, a phase shift arm and a reverse symmetrical polarization rotation separation device in a silicon-based waveguide. structure, using the thermo-optic or electro-optic effect of silicon waveguides to realize a dynamically tunable polarization rotation device between TE0 and TM0

Method used

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  • A silicon-based tunable polarization rotation device
  • A silicon-based tunable polarization rotation device
  • A silicon-based tunable polarization rotation device

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specific Embodiment

[0025] Specific embodiment: the silicon-based tunable polarization rotation device in structure diagram 1, and the adjustable phase shift arm adopts thermal adjustment.

[0026] The tunable polarization rotation device is based on silicon-on-insulator (SOI) material, and the cross-sectional structure is as follows image 3 , consisting of 301 silicon waveguide layer, 302 lower silicon dioxide cladding layer, 303 substrate silicon, 304 upper silicon dioxide cladding layer and 305 planar waveguide layer. When the thickness of the slab waveguide layer at 305 is zero, it represents a strip waveguide; when the thickness of the slab waveguide layer at 305 is not zero, it represents a ridge waveguide.

[0027] Taking the input TM0 polarization state as an example, the attached figure 1 The working principle of the structure shown is: the input TM0 polarization state is converted to TE1 mode after passing through 104 asymmetric double-layer tapers; then through 106 symmetrical branch...

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Abstract

The invention discloses a silicon-based tunable polarization rotator. The silicon-based tunable polarization rotator is characterized in that: the design and production of the silicon-based tunable polarization rotator are based on the planar optical waveguide technology and the semiconductor technology, and the dynamic tunable conversion between TEO and TMO polarization states in waveguide can be achieved. The tunable polarization rotator mainly comprises three functional devices, namely, 101, a symmetry polarization rotation separation device, 102, a phase shift arm and 103, a reversely symmetry polarization rotation separation device, wherein the structure of the functional device 101 can be realized through an adiabatic coupler or an asymmetric double-layer taper, and a symmetric branch; the functional device 102 can be electro optic and thermo-optic in structure; the structure of the functional device 103 can be achieved through an adiabatic coupler or an asymmetric double-layer taper, and a symmetric branch. Compared with various conventional tunable polarization rotators, the silicon-based tunable polarization rotator has the advantage of CMOS compatibility based on the silicon-based planar optical waveguide technology; the device is simple in structure and production technology.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology and planar optical waveguide integration, and relates to a silicon-based adjustable polarization rotation device. Background technique [0002] In recent years, in order to break through the limitation of "electronic bottleneck", photon has been widely regarded as a new information carrier. In the field of long-distance communication, optical communication has achieved great success with the advantages of high bandwidth and low loss; with the development of technology, optical communication will develop towards higher integration density and shorter transmission distance, that is, the scale of optical devices and monolithic integration. Due to the advantages of silicon materials such as large wafer area and CMOS process compatibility, the scheme of using silicon waveguide system to realize integrated optics has attracted more and more attention. At present, a variety of passive devices a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/12G02B6/126G02B27/28G02F1/01
CPCG02B6/12G02B6/126G02B27/286G02B2006/12038G02F1/011G02F1/0136G02F1/0147G02F1/0113
Inventor 郭德汾储涛候康张华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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