46results about How to "Large production tolerance" patented technology

The invention involves a method based on SOI material photonic crystal splitter, including an SOI substrate material. In SOI silicon-etching produced the silicon column is the six-party or square lattice with the lattice. Silicon column height is the top of SOI silicon thickness, integrity in the lattice structure of silicon saving its column and forming splitter input waveguide, two output waveguide; input waveguide attached to the output waveguide two in the middle, with two output waveguide by a silicon-segregation. Front-end input waveguide also have at least one silicon column, the output waveguide also have at least the end of a silicon column. Connected with the outside, the SOI waveguide is placed in the input waveguide input, two output of the output waveguide. The SOI waveguide is of the same height of the silicon-contour. The splitter compact structure, its length than the conventional waveguide Y splitter narrow several times. By controlling the importation of isolation and the output waveguide, silicon waveguide column size can achieve different beam than the light output, therefore more flexibility and practicality.

A serially connected optical switch based photon delay structure comprises a plurality of optical switches and multiple sections of single mode waveguides, wherein one input end of a first optical switch is connected with an input optical fiber, and the other input end of the first optical switch is idle; two output end of the first optical switch are connected with two input ends of a second optical switch respectively through two sections of single mode waveguides; other optical switches are sequentially connected in series according to the connection mode of the first optical switch and the second optical switch; one output end of an Nth optical switch is connected with an output optical fiber, and the other output end of the Nth optical switch is idle; and every two optical switches are connected through a first single mode waveguide and a second single mode waveguide, and the first single mode waveguide is longer than the second single mode waveguide. The serially connected optical switch based photon delay structure has the benefits as follows: the serially connected optical switch based photon delay structure has the advantages of high tuning speed, working stabilization and controllability and realizes mass production by virtue of a mature CMOS (complementary metal oxide semiconductor) technology; and besides, a numerical-control integrated photon delay device is integrated on an SOI (silicon on insulator) silicon chip, the size is small, and the integration level is high.

The invention discloses a silicon-based tunable polarization rotator. The silicon-based tunable polarization rotator is characterized in that: the design and production of the silicon-based tunable polarization rotator are based on the planar optical waveguide technology and the semiconductor technology, and the dynamic tunable conversion between TEO and TMO polarization states in waveguide can be achieved. The tunable polarization rotator mainly comprises three functional devices, namely, 101, a symmetry polarization rotation separation device, 102, a phase shift arm and 103, a reversely symmetry polarization rotation separation device, wherein the structure of the functional device 101 can be realized through an adiabatic coupler or an asymmetric double-layer taper, and a symmetric branch; the functional device 102 can be electro optic and thermo-optic in structure; the structure of the functional device 103 can be achieved through an adiabatic coupler or an asymmetric double-layer taper, and a symmetric branch. Compared with various conventional tunable polarization rotators, the silicon-based tunable polarization rotator has the advantage of CMOS compatibility based on the silicon-based planar optical waveguide technology; the device is simple in structure and production technology.

The invention provides a silicon-lithium niobate heterogeneity integrated scanning chip. The chip comprises a lithium niobate substrate, a silica cladding layer, and a silicon waveguide based core layer. The silica cladding layer is attached to the lithium niobate substrate. The core layer comprises an optical beam splitting unit, a curved waveguide, a thermo-optical phase shifter, and an emergentwaveguide array. The optical beam splitting unit, the curved waveguide, and the emergent waveguide array are located in the silica cladding layer. The thermo-optical phase shifter is disposed on thesilica cladding layer and is located on the curved waveguide. The optical beam splitting unit comprises a plurality of silicon waveguide based beam splitters. According to the silicon-lithium niobateheterogeneity integrated scanning chip, the silicon waveguide substrate is integrated with the heterogeneity of the lithium niobate material, and thermo-optic modulation is used based on the optical phased array technology, so as to change the the refractive index of the waveguide, change the phase of the beam, and deflect the exit direction, thereby obtaining a high-speed low-loss optical modulation chip structure of 1520nm to 1620nm optical communication waveband. The invention further provides a preparation method and application of the chip.

The invention discloses a silicon-based polarization beam splitting rotator based on adiabatic cone asymmetric coupling and a Y branch. According to the rotator, silicon dioxide is adopted as a substrate and a coating layer; a buffer layer made of a silicon material is additionally arranged between the substrate and the coating layer, and a ridge waveguide is constructed on the buffer layer, and therefore, a polarization beam splitting rotator main body can be formed. The ridge waveguide is composed of three sections of structures. The first section is of a heat insulation conical structure, the width of the first section gradually changes from W1 to W2, and conversion from a TM0 polarization mode to a TE1 polarization mode is achieved in a waveguide 1; the second section adopts an asymmetric coupling structure and a heat insulation conical structure to realize polarization beam splitting and rotation from a waveguide 1 to a waveguide 2; and the third section consists of a Y branch andis connected with the second section through an S-shaped bent structure to realize second-stage polarization beam splitting and rotation. The silicon-based optical polarization beam splitting rotatorhas the advantages of large working wavelength range, high extinction ratio, low loss and the like, and has important application in systems of optical communication, photoelectric signal processingand the like.

The invention provides a few-mode fiber device. The fiber core of the few-mode fiber device is formed by a main fiber core and auxiliary fiber cores, wherein the normalized frequency Vm of the main fiber core is larger than 2.405, and the number of the auxiliary fiber cores is M which is larger than or equal to 1. One end of each of the auxiliary fiber cores intersects with the side face of the main fiber core, and the central axis of the main fiber core and the central axes of the auxiliary fiber cores are on the same plane. The other end of each of the auxiliary fiber cores is on an optical fiber end face, and in the end face, the central distance between any two fiber cores is larger than the sum of the radii of the two fiber cores. The parameter between any auxiliary fiber core and the main fiber core satisfies a condition that the refractive index of at least one transmission mode of the main fiber core is lower than the effective refractive indexes of the auxiliary fiber cores. The invention provides the novel few-mode fiber device, and the conversion, combination, separation or elimination of the modes in a few-mode fiber can be realized.

The invention discloses an ultra-large bandwidth silicon-based waveguide MEMS (Micro-Electro-Mechanical Systems) optical switch. The optical switch is mainly composed of an input waveguide, a crossedwaveguide with a nano-chute, and an output waveguide; the crossed waveguide consists of two identical orthogonal elliptic cylinders, and four ports of the crossed waveguide respectively extend out ofa single-mode strip-shaped waveguide as an input / output waveguide; the center of a crossed waveguide main body is fully etched with the nano-chute; two symmetric waveguides are etched with a nano-groove; and the crossed waveguide and a lower cladding nearby the nano-groove are through and hollowed out, and the width of the nano-chute is regulated by regulating the voltage applied to the two ends of the crossed waveguide, so that straight-through or total reflection of a light path is realized. According to the ultra-large bandwidth silicon-based waveguide MEMS optical switch provided by the invention, the propagation path of the optical switch is switched by adjusting the voltage applied to the crossed waveguide, the structure is simple, integration and cascade are convenient, and an arraywaveguide optical switch which is miniaturized, low in cost and high in regulation and control speed is expected to be realized.

The invention discloses a two-stage sub-wavelength grating silicon-based light polarization beam splitting rotator based on asymmetric coupling. Silicon dioxide is used as a substrate, and air is usedas an upper cladding to break vertical symmetry; a polarization beam splitting rotator main body is formed by using a silicon waveguide; the silicon waveguide is divided into three parts: a waveguide1 is a primary coupling sub-wavelength grating waveguide, the characteristic size of the waveguide is equivalently expanded, and the manufacturing tolerance is further increased; the waveguide 2 is atwo-stage conical etching waveguide, the first-stage conical etching and the waveguide 1 complete phase matching to achieve polarization rotation, and the second-stage etching recovers the thicknessof the waveguide to participate in second-stage coupling; and the waveguide 3 is a secondary sub-wavelength grating waveguide and is used for carrying out secondary coupling filtering on the residualTM0 polarization mode. According to the polarization beam splitting rotator, multi-stage coupling is adopted, a multi-stage filtering structure achieves the high polarization extinction ratio and thelarge manufacturing tolerance under the compact structure, and the polarization beam splitting rotator has important application in optical communication and photoelectric signal processing.

The present invention refers to multiple mode interference type optical switch, which is composed of series connected three input waveguides, multimode waveguide zone and three output waveguides; or three input waveguides, two multimode waveguide zones, three connection waveguide, taper transition waveguide, three output waveguides and single modulating zone. The present invention realizes optical switch device having simple modulation, multiple number of channels, high extinction ratio, and wide range according to multiple mode interference operating range property and special phase relationship among image points.

This invention belongs to optics technique field and in detail is a compact multi-film intervene light adjustable attenuation device. The device comprises single film input and output wave guide and a coupler covered with heating electrode multi-module intervene and uses bar heat electrode to modulate the reflection rate in the multi-module intervene light medium according to the calorescence effect to realize the attenuation and switch functions.

The invention discloses an optical switch array chip based on a digital optical phase conjugation principle. A multi-mode interference device and a digital optical phase conjugation reflector are used for constituting a 1*(M1-2)*K1 third-level optical switch subsystem, then q 1*(M1-2)*K1 third-level optical switch subsystems are in series connection in the longitudinal direction to form a 1*M*K1 second-level optical switch subsystem, further, p 1*M*K1 second-level optical switch subsystems and p-1 connectors are in series connection in the transverse direction to form a 1*M*K first-level optical switch subsystem, and finally N 1*M*K first-level optical switch subsystems connected to N input optical waveguides share M output optical waveguides, and an N*M*K optical switch array is formed in a parallel connection mode. The digital optical phase conjugation principle is used in the optical switch array, non-blocking optical switching can be conducted on K different wave lengths, and the optical switch array chip based on the digital optical phase conjugation principle is particularly suitable for optical switching and optical intersecting interconnection of optical communication network nodes and also can be used for optical interconnection between chips and optical interconnection inside an optical computer.

The invention provides a rectangular waveguide mode conversion device. The rectangular waveguide mode conversion device is composed of an auxiliary waveguide, a main waveguide and cladding. The main waveguide can support M kinds of mode transmission, wherein M is greater than or equal to 2; the auxiliary waveguide only supports basic mode transmission. One end of the auxiliary waveguide intersectsthe side face of a main fiber core, and at the other end of the auxiliary waveguide, the distance between the centers of the two waveguides is greater than half of the sum of the widths of the two waveguides. Not only is mutual conversion between an E12 mode and an E22 mode achieved, but also the patterns supported in the main waveguide can be completely and efficiently converted into other modes under the same structure. Parameters of the auxiliary waveguide and main waveguide meet the condition that the effective refractive index of a basic mode of the auxiliary waveguide is greater than that of an arbitrary mode in the main waveguide. According to the novel rectangular waveguide mode conversion device, conversion between low-order optical wave modes and high-order optical wave modes can be achieved.

The invention discloses a polarization beam splitter structure and a polarization beam splitting method, of which the input area of the polarization beam splitter structure comprises a first input waveguide structure of a strip-shaped straight waveguide structure and a second input waveguide structure of a ridge-shaped straight waveguide structure. A coupling area comprises a first coupling waveguide structure of a strip-shaped straight waveguide structure and a second coupling waveguide structure of a ridge-shaped straight waveguide structure, wherein an input port of the first coupling waveguide structure is connected with an output port of the first input waveguide structure, and an input port of the second coupling waveguide structure is connected with an output port of the second input waveguide structure. An output area comprises a first output waveguide structure of a strip-shaped straight waveguide structure and a second output waveguide structure of a ridge-shaped straight waveguide structure, wherein an input port of the first output waveguide structure is connected with an output port of the first coupling waveguide structure, and an input port of the second output waveguide structure is connected with an output port of the second coupling waveguide structure. The beam splitter is compact in structure, and can realize the characteristics of large process tolerance, low insertion loss, high extinction ratio, wide transmission bandwidth and the like.

The invention discloses a multi-functional device based on dual Mach-Zehnder interference structures. A second Mach-Zehnder interference structure is sleeved on a phase shift arm of a first Mach-Zehnder interference structure; a digital signal in divided into two paths, wherein one path is loaded on a phase shift arm of the second Mach-Zehnder interference structure, and the other path is loaded on another phase shift arm of the second Mach-Zehnder interference structure through a phase inverter so as to realize the opposite phase change of an absolute value in the same direction according to the push-pull modulation principle and the functions of a digital optical switch and a multi-code pattern modulator of each of inputted different complete devices. The digital optical switch is large in production tolerance, simple in realization and stronger in anti-noise property; and the multi-code pattern modulator simultaneously modulates an upload signal in a network node into two code patterns, i.e. OOK (On-Off Keying) and BPSK (Binary Phase Shift Keying) and is high in speed and compact in structure. In conclusion, the multi-functional device is novel and compact in structure and larger in bandwidth and provides a new choice for the modulation and the switching treatment of a flexible and complicate optical network.

The invention discloses an on-chip integrated part reflector based on a partial transmission-type corner reflector group. The on-chip integrated part reflector comprises an input waveguide, an outputwaveguide and the partial transmission-type corner reflector group connected between the input waveguide and the output waveguide, wherein the partial transmission-type corner reflector group is composed of a first reflector, a center transmission region and a second reflector, the reflective faces of the first reflector and the second reflector face the input waveguide, and a corner reflector of90 degrees or other degrees is constituted; the input end of the partial transmission-type corner reflector group is connected with the input waveguide through a beam expander, the output end of the partial transmission-type corner reflector group is connected with the output waveguide through an energy coupler, and the input waveguide and the output waveguide can be at any depth. The on-chip integrated part reflector is used for integrated optical chips, and the random transmissivity and the reflectivity allocation within the wide wavelength range can be achieved. The on-chip integrated partreflector is simple in structure, low in loss and large in manufacturing allowance.

The invention discloses a super-short vertical waveguide coupler with a high manufacture tolerance. The coupler is composed of an upper waveguide, a spacing layer and a lower waveguide in the vertical direction. In the spreading direction, the vertical coupler is divided into an input area, a coupling area and an output area. In the coupling area, the width of the upper waveguide decreases gradually, and the upper waveguide is divided into front, middle and rear segments; and in the front and rear segments, the width of the upper waveguide are contracted rapidly, and the middle segment is a mode transfer segment. The thickness of the spacing layer between the upper and lower waveguides is reduced to increase a coupling coefficient, and the length of the coupler is reduced; and in the middle segment of the coupling area, a proper upper waveguide width successively-decrease rate and a proper length are set, so that when the width of the upper waveguide deviates due to limitation of the practical manufacture precision, the mode of the upper waveguide can be still transferred to that of the lower waveguide, and the high manufacture tolerance is realized.

The invention relates to a photonic crystal beam splitter which realizes the beam splitting and propagating of the inputted optical signals by the auto-collimation effect of the SOI (silicon on insulator) based two-dimensional flat air-hole photonic crystal, belonging to the field of optical technology of the semiconductors. The photonic crystal beam splitter comprises an SOI substrate, an air hole area and an SOI stripe-shaped waveguide; the air hole area is formed on the top-layer silicon of the SOI substrate by etching silicon; the SOI stripe-shaped waveguide is used for connecting the air hole area with the external optical fiber or other devices; the air holes formed by etching silicon in the air hole area are arrayed on the top-layer silicon of the SOI substrate like square crystal lattices; the depth of the air holes is equal to the thickness of the top-layer silicon of the SOI substrate; and the SOI stripe-shaped waveguide is the inputting waveguide of the beam-splitter and keeps a certain distance with both the air hole area and two borders which are parallel to the inputting waveguide. The length of the beam splitting area of the beam splitter can be controlled with 10mum, thus the overall length of the device is reduced greatly, and the structure is more compact. In addition, the photonic crystal beam splitter has large preparation tolerance and more flexible design and can be more widely used for the future photonic chip.

The invention provides a high-density low-crosstalk waveguide array based on a micro-nano isolation structure. The high-density low-crosstalk waveguide array comprises a substrate and a core layer based on a silicon waveguide, the core layer comprises two silicon wide waveguides with the same structural parameters and two silicon periodic gratings; and the two silicon wide waveguides are arrangedon the substrate, and two silicon periodic gratings with different parameter structures are arranged between the two adjacent silicon wide waveguides. Through the middle grating structure, phase mismatch of light between the different waveguides is achieved, and the effect of restraining coupling is achieved, so the provided waveguide array is compact in structure, high in transmittance and low incrosstalk.

A high efficiency electro-optical modulator of bended auxiliary type consists of an input waveguide, a modulated waveguide and an output waveguide. It is featured as setting said modulated waveguide to be bended structure and realizing intensity modulation of optical field by utilizing plasma dispersion effect of material.

A three-layer all-dielectric rectangular grating for realizing -2 level broadband high efficiency comprises fused silica as a medium of an incident area and a grating ridge as a three-layer all-dielectric rectangular grating which comprises a first layer of alumina, a second layer of titanium dioxide and a third layer of fused silica, characterized in that in the three-layer rectangular grating, the refractive index of a middle layer is largest, and the refractive index of each layer of material is between the refractive indexes of two adjacent materials. Femtosecond laser light is incident ata secondary Bragg angle theta in=arcsin (gamma / n1d). n1 is the refractive index of the incident area, d represents a grating period, and b represents the width of the grating ridge. The rectangular grating of the present invention can achieve that transmission -2 level diffraction efficiency is close to 1 for TE polarized light. The grating has the characteristics of simple structure, rectangularstructure, small depth-to-width ratio, easy processing and large manufacturing tolerance. The grating is easily realized under a microelectronic deep etching process which combines a current opticalholographic recording technology or an electron beam direct writing technology, is mature in process, low in cost and capable of realizing batch production, and has important application prospects.

The invention involves a method based on SOI material photonic crystal splitter, including an SOI substrate material. In SOI silicon-etching produced the silicon column is the six-party or square lattice with the lattice. Silicon column height is the top of SOI silicon thickness, integrity in the lattice structure of silicon saving its column and forming splitter input waveguide, two output waveguide; input waveguide attached to the output waveguide two in the middle, with two output waveguide by a silicon-segregation. Front-end input waveguide also have at least one silicon column, the output waveguide also have at least the end of a silicon column. Connected with the outside, the SOI waveguide is placed in the input waveguide input, two output of the output waveguide. The SOI waveguide is of the same height of the silicon-contour. The splitter compact structure, its length than the conventional waveguide Y splitter narrow several times. By controlling the importation of isolation and the output waveguide, silicon waveguide column size can achieve different beam than the light output, therefore more flexibility and practicality.

The invention discloses an adjustable coherence detector structure. The adjustable coherence detector structure comprises two input waveguides connected with a 2*4 multimode coherence coupler, the 2*4 multimode coherence coupler used for demodulating two pairs of synchronizing signals, an adjustable electrode used for causing local refraction rate variation, a 2*2 multimode coherence coupler used for translating the synchronizing signals into orthogogonal signals, four output waveguides and two pairs of balance detectors, wherein the output end of the 2*4 multimode coherence coupler is directly connected with the input end of the 2*2 multimode coherence coupler, and the adjustable electrode is positioned above the joint of the two multimode coherence couplers; and the two output waveguides are connected with the output end of the 2*4 multimode coherence coupler, the other two output waveguides are connected with the output end of the 2*2 multimode coherence coupler, and the two pairs of balance detector are used for collimating the four output waveguides. The adjustable coherence detector structure provided by the invention can be used for realizing signal demodulation in an achiasmate manner, and is larger in tolerance and operation bandwidth.

The invention discloses a silicon-based waveguide MEMS optical switch based on electrostatic comb driving, and an N * N array. The optical switch is mainly composed of two separated crossed waveguidemirrors and an electrostatic comb drive. A crossed waveguide is composed of two crossed wide waveguides and four heat insulation conical waveguides; the electrostatic comb drive comprises an electrostatic comb, an island spring structure and a transmission rod; the electrostatic comb is of a pair of comb tooth structures, and other parts of the electrostatic comb are kept grounded by applying voltage to fixed comb teeth; and under the action of electrostatic force, the movable comb teeth move towards the fixed comb teeth, a spring deforms, the movable crossed waveguide mirror is pushed by thetransmission rod to move towards the fixed crossed waveguide mirror, and the separated crossed waveguide mirror is recombined into a complete crossed waveguide. The output optical path of the opticalswitch is regulated and controlled by the electrostatic comb drive, the 2 * 2 optical switch unit with low loss and high extinction ratio and the N * N array are finally realized, and the optical switch has the outstanding advantages of large bandwidth, low loss, high extinction ratio, low energy consumption, simple structure, convenience in control, simple and convenient process and the like.

The present invention relates to a lid for a container holding a flowable substance which comprises a mounting portion to be attached to the container and an opening to remove the flowable substance from the container, whereas the opening is opened and closed by means of a slider which is connected to the lid and rotates around a vertical axis.

The invention discloses a polarization beam splitter structure and a polarization beam splitting method. The input area includes an input waveguide structure 1 with a strip straight waveguide structure and an input waveguide structure 2 with a ridge straight waveguide structure. The coupling area includes a coupling waveguide structure 1 with a strip straight waveguide structure and a coupling waveguide structure 2 with a ridge straight waveguide structure, the input port of the coupling waveguide structure 1 is connected to the output port of the input waveguide structure 1, and the coupling waveguide structure 2 The input port is connected with the output port of the input waveguide structure two. Its output area includes an output waveguide structure 1 with a strip straight waveguide structure and an output waveguide structure 2 with a ridge-shaped straight waveguide structure, the input port of the output waveguide structure 1 is connected to the output port of the coupling waveguide structure 1, and the output waveguide structure 2 The input port is connected with the output port of the second coupling waveguide structure. The beam splitter of the invention has the advantages of compact structure, large process tolerance, low insertion loss, high extinction ratio, wide transmission bandwidth and the like.

A few-mode fibre device. A fibre core of the few-mode fibre device is composed of a main fibre core (1) and an auxiliary fibre core (2), wherein there is only one main fibre core (1), and the normalized frequency V m meets the condition that V m > 2.405, i.e. supporting high-order mode transmission; the number of auxiliary fibre cores (2) is M, wherein M ≥ 1; one end of the auxiliary fibre cores (2) intersects with a side face of the main fibre core (1), and the central axis of the main fibre core (1) is in the same plane as the central axis of the auxiliary fibre cores (2); the other end of the auxiliary fibre cores (2) is located on an end face of the fibre, and in the end face, the centre distance between any two fibre cores is greater than the sum of the radii of the two fibre cores; and a parameter between any auxiliary fibre core (2) and the main fibre core (1) meets: the main fibre core (1) at least has a transmission mode of which the effective refractive index is less than the effective refractive index of a fundamental mode of the auxiliary fibre cores (2). A mode in a few-mode fibre can be converted, combined, separated or filtered.

The invention discloses a silicon-based tunable polarization rotator. The silicon-based tunable polarization rotator is characterized in that: the design and production of the silicon-based tunable polarization rotator are based on the planar optical waveguide technology and the semiconductor technology, and the dynamic tunable conversion between TEO and TMO polarization states in waveguide can be achieved. The tunable polarization rotator mainly comprises three functional devices, namely, 101, a symmetry polarization rotation separation device, 102, a phase shift arm and 103, a reversely symmetry polarization rotation separation device, wherein the structure of the functional device 101 can be realized through an adiabatic coupler or an asymmetric double-layer taper, and a symmetric branch; the functional device 102 can be electro optic and thermo-optic in structure; the structure of the functional device 103 can be achieved through an adiabatic coupler or an asymmetric double-layer taper, and a symmetric branch. Compared with various conventional tunable polarization rotators, the silicon-based tunable polarization rotator has the advantage of CMOS compatibility based on the silicon-based planar optical waveguide technology; the device is simple in structure and production technology.

The invention provides a silicon-lithium niobate heterogeneity integrated scanning chip. The chip comprises a lithium niobate substrate, a silica cladding layer, and a silicon waveguide based core layer. The silica cladding layer is attached to the lithium niobate substrate. The core layer comprises an optical beam splitting unit, a curved waveguide, a thermo-optical phase shifter, and an emergentwaveguide array. The optical beam splitting unit, the curved waveguide, and the emergent waveguide array are located in the silica cladding layer. The thermo-optical phase shifter is disposed on thesilica cladding layer and is located on the curved waveguide. The optical beam splitting unit comprises a plurality of silicon waveguide based beam splitters. According to the silicon-lithium niobateheterogeneity integrated scanning chip, the silicon waveguide substrate is integrated with the heterogeneity of the lithium niobate material, and thermo-optic modulation is used based on the optical phased array technology, so as to change the the refractive index of the waveguide, change the phase of the beam, and deflect the exit direction, thereby obtaining a high-speed low-loss optical modulation chip structure of 1520nm to 1620nm optical communication waveband. The invention further provides a preparation method and application of the chip.