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46results about How to "Large production tolerance" patented technology

Serially connected optical switch based photon delay structure and numerical-control integrated photon delay device

A serially connected optical switch based photon delay structure comprises a plurality of optical switches and multiple sections of single mode waveguides, wherein one input end of a first optical switch is connected with an input optical fiber, and the other input end of the first optical switch is idle; two output end of the first optical switch are connected with two input ends of a second optical switch respectively through two sections of single mode waveguides; other optical switches are sequentially connected in series according to the connection mode of the first optical switch and the second optical switch; one output end of an Nth optical switch is connected with an output optical fiber, and the other output end of the Nth optical switch is idle; and every two optical switches are connected through a first single mode waveguide and a second single mode waveguide, and the first single mode waveguide is longer than the second single mode waveguide. The serially connected optical switch based photon delay structure has the benefits as follows: the serially connected optical switch based photon delay structure has the advantages of high tuning speed, working stabilization and controllability and realizes mass production by virtue of a mature CMOS (complementary metal oxide semiconductor) technology; and besides, a numerical-control integrated photon delay device is integrated on an SOI (silicon on insulator) silicon chip, the size is small, and the integration level is high.
Owner:THE 44TH INST OF CHINA ELECTRONICS TECH GROUP CORP

Silicon-based tunable polarization rotator

The invention discloses a silicon-based tunable polarization rotator. The silicon-based tunable polarization rotator is characterized in that: the design and production of the silicon-based tunable polarization rotator are based on the planar optical waveguide technology and the semiconductor technology, and the dynamic tunable conversion between TEO and TMO polarization states in waveguide can be achieved. The tunable polarization rotator mainly comprises three functional devices, namely, 101, a symmetry polarization rotation separation device, 102, a phase shift arm and 103, a reversely symmetry polarization rotation separation device, wherein the structure of the functional device 101 can be realized through an adiabatic coupler or an asymmetric double-layer taper, and a symmetric branch; the functional device 102 can be electro optic and thermo-optic in structure; the structure of the functional device 103 can be achieved through an adiabatic coupler or an asymmetric double-layer taper, and a symmetric branch. Compared with various conventional tunable polarization rotators, the silicon-based tunable polarization rotator has the advantage of CMOS compatibility based on the silicon-based planar optical waveguide technology; the device is simple in structure and production technology.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI +1

Silicon-niobium niobate heterogeneity integrated scanning chip, preparation method and application thereof

ActiveCN109581584AExcellent electro-optic modulation characteristicsReduce transmission lossOptical waveguide light guideNon-linear opticsLithiumBeam splitter
The invention provides a silicon-lithium niobate heterogeneity integrated scanning chip. The chip comprises a lithium niobate substrate, a silica cladding layer, and a silicon waveguide based core layer. The silica cladding layer is attached to the lithium niobate substrate. The core layer comprises an optical beam splitting unit, a curved waveguide, a thermo-optical phase shifter, and an emergentwaveguide array. The optical beam splitting unit, the curved waveguide, and the emergent waveguide array are located in the silica cladding layer. The thermo-optical phase shifter is disposed on thesilica cladding layer and is located on the curved waveguide. The optical beam splitting unit comprises a plurality of silicon waveguide based beam splitters. According to the silicon-lithium niobateheterogeneity integrated scanning chip, the silicon waveguide substrate is integrated with the heterogeneity of the lithium niobate material, and thermo-optic modulation is used based on the optical phased array technology, so as to change the the refractive index of the waveguide, change the phase of the beam, and deflect the exit direction, thereby obtaining a high-speed low-loss optical modulation chip structure of 1520nm to 1620nm optical communication waveband. The invention further provides a preparation method and application of the chip.
Owner:UNIV OF SHANGHAI FOR SCI & TECH

Silicon-based polarization beam splitting rotator based on adiabatic cone asymmetric coupling and Y branch

The invention discloses a silicon-based polarization beam splitting rotator based on adiabatic cone asymmetric coupling and a Y branch. According to the rotator, silicon dioxide is adopted as a substrate and a coating layer; a buffer layer made of a silicon material is additionally arranged between the substrate and the coating layer, and a ridge waveguide is constructed on the buffer layer, and therefore, a polarization beam splitting rotator main body can be formed. The ridge waveguide is composed of three sections of structures. The first section is of a heat insulation conical structure, the width of the first section gradually changes from W1 to W2, and conversion from a TM0 polarization mode to a TE1 polarization mode is achieved in a waveguide 1; the second section adopts an asymmetric coupling structure and a heat insulation conical structure to realize polarization beam splitting and rotation from a waveguide 1 to a waveguide 2; and the third section consists of a Y branch andis connected with the second section through an S-shaped bent structure to realize second-stage polarization beam splitting and rotation. The silicon-based optical polarization beam splitting rotatorhas the advantages of large working wavelength range, high extinction ratio, low loss and the like, and has important application in systems of optical communication, photoelectric signal processingand the like.
Owner:SOUTHWEST JIAOTONG UNIV

Ultra-large bandwidth silicon-based waveguide MEMS (Micro-Electro-Mechanical Systems) optical switch

The invention discloses an ultra-large bandwidth silicon-based waveguide MEMS (Micro-Electro-Mechanical Systems) optical switch. The optical switch is mainly composed of an input waveguide, a crossedwaveguide with a nano-chute, and an output waveguide; the crossed waveguide consists of two identical orthogonal elliptic cylinders, and four ports of the crossed waveguide respectively extend out ofa single-mode strip-shaped waveguide as an input / output waveguide; the center of a crossed waveguide main body is fully etched with the nano-chute; two symmetric waveguides are etched with a nano-groove; and the crossed waveguide and a lower cladding nearby the nano-groove are through and hollowed out, and the width of the nano-chute is regulated by regulating the voltage applied to the two ends of the crossed waveguide, so that straight-through or total reflection of a light path is realized. According to the ultra-large bandwidth silicon-based waveguide MEMS optical switch provided by the invention, the propagation path of the optical switch is switched by adjusting the voltage applied to the crossed waveguide, the structure is simple, integration and cascade are convenient, and an arraywaveguide optical switch which is miniaturized, low in cost and high in regulation and control speed is expected to be realized.
Owner:ZHEJIANG UNIV

Two-stage sub-wavelength grating silicon-based light polarization beam splitting rotator based on asymmetric coupling

ActiveCN112327410ASolve the problem of low extinction ratioGuaranteed Extinction Ratio PerformanceOptical light guidesEtchingGrating
The invention discloses a two-stage sub-wavelength grating silicon-based light polarization beam splitting rotator based on asymmetric coupling. Silicon dioxide is used as a substrate, and air is usedas an upper cladding to break vertical symmetry; a polarization beam splitting rotator main body is formed by using a silicon waveguide; the silicon waveguide is divided into three parts: a waveguide1 is a primary coupling sub-wavelength grating waveguide, the characteristic size of the waveguide is equivalently expanded, and the manufacturing tolerance is further increased; the waveguide 2 is atwo-stage conical etching waveguide, the first-stage conical etching and the waveguide 1 complete phase matching to achieve polarization rotation, and the second-stage etching recovers the thicknessof the waveguide to participate in second-stage coupling; and the waveguide 3 is a secondary sub-wavelength grating waveguide and is used for carrying out secondary coupling filtering on the residualTM0 polarization mode. According to the polarization beam splitting rotator, multi-stage coupling is adopted, a multi-stage filtering structure achieves the high polarization extinction ratio and thelarge manufacturing tolerance under the compact structure, and the polarization beam splitting rotator has important application in optical communication and photoelectric signal processing.
Owner:SOUTHWEST JIAOTONG UNIV

Optical switch array chip based on digital optical phase conjugation principle

The invention discloses an optical switch array chip based on a digital optical phase conjugation principle. A multi-mode interference device and a digital optical phase conjugation reflector are used for constituting a 1*(M1-2)*K1 third-level optical switch subsystem, then q 1*(M1-2)*K1 third-level optical switch subsystems are in series connection in the longitudinal direction to form a 1*M*K1 second-level optical switch subsystem, further, p 1*M*K1 second-level optical switch subsystems and p-1 connectors are in series connection in the transverse direction to form a 1*M*K first-level optical switch subsystem, and finally N 1*M*K first-level optical switch subsystems connected to N input optical waveguides share M output optical waveguides, and an N*M*K optical switch array is formed in a parallel connection mode. The digital optical phase conjugation principle is used in the optical switch array, non-blocking optical switching can be conducted on K different wave lengths, and the optical switch array chip based on the digital optical phase conjugation principle is particularly suitable for optical switching and optical intersecting interconnection of optical communication network nodes and also can be used for optical interconnection between chips and optical interconnection inside an optical computer.
Owner:HUAZHONG NORMAL UNIV

Polarization beam splitter structure and polarization beam splitting method

ActiveCN112711093ASimple structureProcess requirements are not harshOptical waveguide light guideTransmission bandwidthEngineering
The invention discloses a polarization beam splitter structure and a polarization beam splitting method, of which the input area of the polarization beam splitter structure comprises a first input waveguide structure of a strip-shaped straight waveguide structure and a second input waveguide structure of a ridge-shaped straight waveguide structure. A coupling area comprises a first coupling waveguide structure of a strip-shaped straight waveguide structure and a second coupling waveguide structure of a ridge-shaped straight waveguide structure, wherein an input port of the first coupling waveguide structure is connected with an output port of the first input waveguide structure, and an input port of the second coupling waveguide structure is connected with an output port of the second input waveguide structure. An output area comprises a first output waveguide structure of a strip-shaped straight waveguide structure and a second output waveguide structure of a ridge-shaped straight waveguide structure, wherein an input port of the first output waveguide structure is connected with an output port of the first coupling waveguide structure, and an input port of the second output waveguide structure is connected with an output port of the second coupling waveguide structure. The beam splitter is compact in structure, and can realize the characteristics of large process tolerance, low insertion loss, high extinction ratio, wide transmission bandwidth and the like.
Owner:QXP TECH INC

Multi-functional device based on dual Mach-Zehnder interference structures

The invention discloses a multi-functional device based on dual Mach-Zehnder interference structures. A second Mach-Zehnder interference structure is sleeved on a phase shift arm of a first Mach-Zehnder interference structure; a digital signal in divided into two paths, wherein one path is loaded on a phase shift arm of the second Mach-Zehnder interference structure, and the other path is loaded on another phase shift arm of the second Mach-Zehnder interference structure through a phase inverter so as to realize the opposite phase change of an absolute value in the same direction according to the push-pull modulation principle and the functions of a digital optical switch and a multi-code pattern modulator of each of inputted different complete devices. The digital optical switch is large in production tolerance, simple in realization and stronger in anti-noise property; and the multi-code pattern modulator simultaneously modulates an upload signal in a network node into two code patterns, i.e. OOK (On-Off Keying) and BPSK (Binary Phase Shift Keying) and is high in speed and compact in structure. In conclusion, the multi-functional device is novel and compact in structure and larger in bandwidth and provides a new choice for the modulation and the switching treatment of a flexible and complicate optical network.
Owner:ZHEJIANG UNIV

Photonic crystal beam splitter

The invention relates to a photonic crystal beam splitter which realizes the beam splitting and propagating of the inputted optical signals by the auto-collimation effect of the SOI (silicon on insulator) based two-dimensional flat air-hole photonic crystal, belonging to the field of optical technology of the semiconductors. The photonic crystal beam splitter comprises an SOI substrate, an air hole area and an SOI stripe-shaped waveguide; the air hole area is formed on the top-layer silicon of the SOI substrate by etching silicon; the SOI stripe-shaped waveguide is used for connecting the air hole area with the external optical fiber or other devices; the air holes formed by etching silicon in the air hole area are arrayed on the top-layer silicon of the SOI substrate like square crystal lattices; the depth of the air holes is equal to the thickness of the top-layer silicon of the SOI substrate; and the SOI stripe-shaped waveguide is the inputting waveguide of the beam-splitter and keeps a certain distance with both the air hole area and two borders which are parallel to the inputting waveguide. The length of the beam splitting area of the beam splitter can be controlled with 10mum, thus the overall length of the device is reduced greatly, and the structure is more compact. In addition, the photonic crystal beam splitter has large preparation tolerance and more flexible design and can be more widely used for the future photonic chip.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Three-layer all-dielectric rectangular grating for realizing -2 level broadband high efficiency

ActiveCN110716255ADiffraction efficiency achievedSimple structureDiffraction gratingsFemto second laserRefractive index
A three-layer all-dielectric rectangular grating for realizing -2 level broadband high efficiency comprises fused silica as a medium of an incident area and a grating ridge as a three-layer all-dielectric rectangular grating which comprises a first layer of alumina, a second layer of titanium dioxide and a third layer of fused silica, characterized in that in the three-layer rectangular grating, the refractive index of a middle layer is largest, and the refractive index of each layer of material is between the refractive indexes of two adjacent materials. Femtosecond laser light is incident ata secondary Bragg angle theta in=arcsin (gamma/n1d). n1 is the refractive index of the incident area, d represents a grating period, and b represents the width of the grating ridge. The rectangular grating of the present invention can achieve that transmission -2 level diffraction efficiency is close to 1 for TE polarized light. The grating has the characteristics of simple structure, rectangularstructure, small depth-to-width ratio, easy processing and large manufacturing tolerance. The grating is easily realized under a microelectronic deep etching process which combines a current opticalholographic recording technology or an electron beam direct writing technology, is mature in process, low in cost and capable of realizing batch production, and has important application prospects.
Owner:SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI

Silicon-based MEMS optical switch based on electrostatic comb driving, and N * N array

The invention discloses a silicon-based waveguide MEMS optical switch based on electrostatic comb driving, and an N * N array. The optical switch is mainly composed of two separated crossed waveguidemirrors and an electrostatic comb drive. A crossed waveguide is composed of two crossed wide waveguides and four heat insulation conical waveguides; the electrostatic comb drive comprises an electrostatic comb, an island spring structure and a transmission rod; the electrostatic comb is of a pair of comb tooth structures, and other parts of the electrostatic comb are kept grounded by applying voltage to fixed comb teeth; and under the action of electrostatic force, the movable comb teeth move towards the fixed comb teeth, a spring deforms, the movable crossed waveguide mirror is pushed by thetransmission rod to move towards the fixed crossed waveguide mirror, and the separated crossed waveguide mirror is recombined into a complete crossed waveguide. The output optical path of the opticalswitch is regulated and controlled by the electrostatic comb drive, the 2 * 2 optical switch unit with low loss and high extinction ratio and the N * N array are finally realized, and the optical switch has the outstanding advantages of large bandwidth, low loss, high extinction ratio, low energy consumption, simple structure, convenience in control, simple and convenient process and the like.
Owner:ZHEJIANG UNIV

A kind of polarization beam splitter structure and polarization beam splitting method

The invention discloses a polarization beam splitter structure and a polarization beam splitting method. The input area includes an input waveguide structure 1 with a strip straight waveguide structure and an input waveguide structure 2 with a ridge straight waveguide structure. The coupling area includes a coupling waveguide structure 1 with a strip straight waveguide structure and a coupling waveguide structure 2 with a ridge straight waveguide structure, the input port of the coupling waveguide structure 1 is connected to the output port of the input waveguide structure 1, and the coupling waveguide structure 2 The input port is connected with the output port of the input waveguide structure two. Its output area includes an output waveguide structure 1 with a strip straight waveguide structure and an output waveguide structure 2 with a ridge-shaped straight waveguide structure, the input port of the output waveguide structure 1 is connected to the output port of the coupling waveguide structure 1, and the output waveguide structure 2 The input port is connected with the output port of the second coupling waveguide structure. The beam splitter of the invention has the advantages of compact structure, large process tolerance, low insertion loss, high extinction ratio, wide transmission bandwidth and the like.
Owner:QXP TECH INC

A silicon-based tunable polarization rotation device

The invention discloses a silicon-based tunable polarization rotator. The silicon-based tunable polarization rotator is characterized in that: the design and production of the silicon-based tunable polarization rotator are based on the planar optical waveguide technology and the semiconductor technology, and the dynamic tunable conversion between TEO and TMO polarization states in waveguide can be achieved. The tunable polarization rotator mainly comprises three functional devices, namely, 101, a symmetry polarization rotation separation device, 102, a phase shift arm and 103, a reversely symmetry polarization rotation separation device, wherein the structure of the functional device 101 can be realized through an adiabatic coupler or an asymmetric double-layer taper, and a symmetric branch; the functional device 102 can be electro optic and thermo-optic in structure; the structure of the functional device 103 can be achieved through an adiabatic coupler or an asymmetric double-layer taper, and a symmetric branch. Compared with various conventional tunable polarization rotators, the silicon-based tunable polarization rotator has the advantage of CMOS compatibility based on the silicon-based planar optical waveguide technology; the device is simple in structure and production technology.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI +1

A silicon-lithium niobate heterogeneous integrated scanning chip and its preparation method and application

ActiveCN109581584BExcellent electro-optic modulation characteristicsReduce transmission lossOptical waveguide light guideNon-linear opticsBeam splitterRefractive index
The invention provides a silicon-lithium niobate heterogeneity integrated scanning chip. The chip comprises a lithium niobate substrate, a silica cladding layer, and a silicon waveguide based core layer. The silica cladding layer is attached to the lithium niobate substrate. The core layer comprises an optical beam splitting unit, a curved waveguide, a thermo-optical phase shifter, and an emergentwaveguide array. The optical beam splitting unit, the curved waveguide, and the emergent waveguide array are located in the silica cladding layer. The thermo-optical phase shifter is disposed on thesilica cladding layer and is located on the curved waveguide. The optical beam splitting unit comprises a plurality of silicon waveguide based beam splitters. According to the silicon-lithium niobateheterogeneity integrated scanning chip, the silicon waveguide substrate is integrated with the heterogeneity of the lithium niobate material, and thermo-optic modulation is used based on the optical phased array technology, so as to change the the refractive index of the waveguide, change the phase of the beam, and deflect the exit direction, thereby obtaining a high-speed low-loss optical modulation chip structure of 1520nm to 1620nm optical communication waveband. The invention further provides a preparation method and application of the chip.
Owner:UNIV OF SHANGHAI FOR SCI & TECH
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