46results about How to "Large production tolerance" patented technology

The invention discloses an ultra-large bandwidth silicon-based waveguide MEMS (Micro-Electro-Mechanical Systems) optical switch. The optical switch is mainly composed of an input waveguide, a crossedwaveguide with a nano-chute, and an output waveguide; the crossed waveguide consists of two identical orthogonal elliptic cylinders, and four ports of the crossed waveguide respectively extend out ofa single-mode strip-shaped waveguide as an input / output waveguide; the center of a crossed waveguide main body is fully etched with the nano-chute; two symmetric waveguides are etched with a nano-groove; and the crossed waveguide and a lower cladding nearby the nano-groove are through and hollowed out, and the width of the nano-chute is regulated by regulating the voltage applied to the two ends of the crossed waveguide, so that straight-through or total reflection of a light path is realized. According to the ultra-large bandwidth silicon-based waveguide MEMS optical switch provided by the invention, the propagation path of the optical switch is switched by adjusting the voltage applied to the crossed waveguide, the structure is simple, integration and cascade are convenient, and an arraywaveguide optical switch which is miniaturized, low in cost and high in regulation and control speed is expected to be realized.

The invention involves a method based on SOI material photonic crystal splitter, including an SOI substrate material. In SOI silicon-etching produced the silicon column is the six-party or square lattice with the lattice. Silicon column height is the top of SOI silicon thickness, integrity in the lattice structure of silicon saving its column and forming splitter input waveguide, two output waveguide; input waveguide attached to the output waveguide two in the middle, with two output waveguide by a silicon-segregation. Front-end input waveguide also have at least one silicon column, the output waveguide also have at least the end of a silicon column. Connected with the outside, the SOI waveguide is placed in the input waveguide input, two output of the output waveguide. The SOI waveguide is of the same height of the silicon-contour. The splitter compact structure, its length than the conventional waveguide Y splitter narrow several times. By controlling the importation of isolation and the output waveguide, silicon waveguide column size can achieve different beam than the light output, therefore more flexibility and practicality.

A few-mode fibre device. A fibre core of the few-mode fibre device is composed of a main fibre core (1) and an auxiliary fibre core (2), wherein there is only one main fibre core (1), and the normalized frequency V m meets the condition that V m > 2.405, i.e. supporting high-order mode transmission; the number of auxiliary fibre cores (2) is M, wherein M ≥ 1; one end of the auxiliary fibre cores (2) intersects with a side face of the main fibre core (1), and the central axis of the main fibre core (1) is in the same plane as the central axis of the auxiliary fibre cores (2); the other end of the auxiliary fibre cores (2) is located on an end face of the fibre, and in the end face, the centre distance between any two fibre cores is greater than the sum of the radii of the two fibre cores; and a parameter between any auxiliary fibre core (2) and the main fibre core (1) meets: the main fibre core (1) at least has a transmission mode of which the effective refractive index is less than the effective refractive index of a fundamental mode of the auxiliary fibre cores (2). A mode in a few-mode fibre can be converted, combined, separated or filtered.

The invention discloses an ultra-large bandwidth silicon-based waveguide MEMS optical switch. The optical switch is mainly composed of three parts: input waveguide, cross waveguide with nano-slant groove, and output waveguide. The crossover waveguide is composed of two identical orthogonal elliptical cylinders. The four ports of the crossover waveguide respectively extend the single-mode strip waveguide as the input / output waveguide; The two waveguides are also fully etched with nano-grooves, which penetrate through the lower cladding layer near the cross-waveguide and the nano-groove. By adjusting the voltage applied to both ends of the cross-waveguide to adjust the width of the nano-chute, in this way the direct or full optical path reflection. The invention switches the propagation path of the optical switch by adjusting the voltage applied to the cross waveguide, has a simple structure, is convenient for integration and cascading, and is expected to realize an arrayed waveguide optical switch with miniaturization, low cost, and fast adjustment speed.

The invention belongs to the field of optical communication technology. In the concrete, it relates to a multimode interference thermo-optical switch. Said switch is formed from a sinle-mode input waveguide, a multimode interference coupling waveguide, an off-state single-mode ouput waveguide, an on-state single-mode. out put waveguide, top layer thermal electrode and power supply which are successively combined. Said invention alsoprovides its working principle and concrete method steps for implementing on-off conversion of said switch. Said invention is compact in structure, and said invented device and be used as optical attenuator for use.