Photonic crystals splitter based on SOI and preparing method

A photonic crystal and beam splitter technology, applied in the direction of optical waveguide and light guide, can solve the problems of shortened device length, difficult manufacturing, large manufacturing tolerance, etc., and achieve the effect of reduced device size, wide available bandwidth range, and compact structure

Inactive Publication Date: 2007-05-23
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The object of the present invention is to overcome the deficiency that above-mentioned photonic crystal Y beam splitter exists, and the difficulty in making; Thereby provide a kind of broadband photonic crystal beam splitter and manufacturing method based on SOI material; This photonic crystal beam splitter and Compared with the traditional Y beam splitter, due to the use of photonic crystal waveguide, the length of the beam splitting area is less than 10 microns, which will greatly shorten the overall device length; compared with the ordinary photonic crystal Y beam splitter, it does not Defect columns need to be introduced, the manufacturing tolerance is larger, the design is more flexible, and it can be widely used in future photonic chips

Method used

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  • Photonic crystals splitter based on SOI and preparing method
  • Photonic crystals splitter based on SOI and preparing method
  • Photonic crystals splitter based on SOI and preparing method

Examples

Experimental program
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Effect test

Embodiment 1

[0046] (1) First, immerse the SOI material in HF acid to remove surface oxides, shake and clean the chip with deionized water, heat it in acetone solution, let it cool naturally at room temperature after boiling, and then wash it with deionized water 30 times Above, then put it into absolute ethanol to repeat the heating, cooling and cleaning process; then clean it with an ultrasonic cleaner for 5 minutes, and finally blow dry the piece with nitrogen, and bake it in a 100°C oven for 3-4 minutes;

[0047] (2) Glue rejection: due to deep silicon etching, in order to obtain high-resolution and high-aspect-ratio graphics, a double-layer glue process is used: first, a coating with a thickness of about 500nm, a molecular weight of 950, and a concentration of 4% is applied on SOI The positive resist PMMA, the underlying photoresist PMMA is used as a mask for SOI patterning, and it is baked in an oven at 85°C for one hour to evaporate the solvent in PMMA and promote the adhesion of PMM...

Embodiment 2

[0062] Make a photonic crystal beam splitter based on SOI material of a utility model by the method for embodiment 1, its technology is the same as embodiment 1, only process condition has following difference:

[0063] (2) Glue rejection: first coat the positive glue PMMA with a thickness of about 600nm, a molecular weight of 950, and a concentration of 4% on the SOI, and bake it in an oven at 75°C for 2 hours after the glue is shaken; the glue is completely cured and then coated Negative resist HSQ about 70nm thick; bake at 80°C for 5 minutes;

[0064] (3) Electron beam exposure: Electron beam exposure technology is adopted, and the exposure conditions are: accelerating bias voltage 30Kv, aperture light beam 30μm, write field size 200μm 2 , exposure dose 250μC / cm -2 ;

[0065] (4) Development: first develop in MF322 developer for 2 minutes, then immerse in MF322:H2O=1:9 mixture for 12s, and finally wash in water for 25s;

[0066] (5) Reactive ion etching (RIE): with oxyge...

Embodiment 3

[0070] Make a photonic crystal beam splitter based on SOI material of a utility model by the method for embodiment 1 and example 2, its technology is the same as embodiment 1 and example 2, just process condition has following difference:

[0071] (3) Electron beam exposure: Electron beam exposure process is adopted, and the exposure conditions are: accelerating bias voltage 100Kv, aperture light beam 40μm, write field size 300μm 2 , exposure dose 800μC / cm -2 ;

[0072] (4) Development: first develop in MF322 developer for 50s, then immerse in MF322:H20=1:9 mixture for 16s, and finally wash in water for 20s;

[0073] (5) Reactive ion etching (RIE): with oxygen O 2 As a working gas, the RF power density is 0.10Wcm -2 , under the condition of pressure of 0.8Pa, the pattern is transferred from HSQ to the underlying adhesive PMMA;

[0074] (6) ICP etching: PMMA is used as an etching mask, and SOI material is etched by ICP. The etching conditions are as follows: cooling liquid...

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Abstract

The invention involves a method based on SOI material photonic crystal splitter, including an SOI substrate material. In SOI silicon-etching produced the silicon column is the six-party or square lattice with the lattice. Silicon column height is the top of SOI silicon thickness, integrity in the lattice structure of silicon saving its column and forming splitter input waveguide, two output waveguide; input waveguide attached to the output waveguide two in the middle, with two output waveguide by a silicon-segregation. Front-end input waveguide also have at least one silicon column, the output waveguide also have at least the end of a silicon column. Connected with the outside, the SOI waveguide is placed in the input waveguide input, two output of the output waveguide. The SOI waveguide is of the same height of the silicon-contour. The splitter compact structure, its length than the conventional waveguide Y splitter narrow several times. By controlling the importation of isolation and the output waveguide, silicon waveguide column size can achieve different beam than the light output, therefore more flexibility and practicality.

Description

technical field [0001] The invention relates to a photonic crystal beam splitter used in the fields of optical communication, optical calculation, optical sensing and optical measurement; in particular, it relates to a photonic crystal beam splitter made of SOI material and a manufacturing method. Background technique [0002] In the past half century, silicon-dominated microelectronics technology has made remarkable achievements, which has greatly promoted the arrival of the golden age of information technology. The monopoly position of silicon in the market and the huge advantages in technology attract people to continuously develop miniaturized and integrated silicon-based photonic devices to realize large-scale integrated photonic chips. [0003] Silicon-on-Insulator (Silicon-on-Insulator, SOI) is a unique silicon-based material system. The use of this material to make optoelectronic devices is conducive to compatibility with mature CMOS processes and to achieve large-sc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/12G02B6/13
Inventor 余和军余金中陈少武
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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