Semiconductor Device And Method Of Forming The Same
A semiconductor and complementary technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as difficult control of leakage current, inability to apply flexible substrates, loss of practicability, etc.
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no. 1 example
[0092] Figure 1A to Figure 1E It is a schematic cross-sectional view of the manufacturing method of the semiconductor device according to the first embodiment of the present invention.
[0093] Please refer to Figure 1A , providing a substrate 100. The substrate 100 can be a rigid substrate or a flexible substrate. A rigid substrate is, for example, a glass substrate or a silicon substrate. Flexible substrates are, for example, metal sheets or plastic substrates. The substrate 100 has a first region 100a and a second region 100b. In one embodiment, the first region 100 a is, for example, a P-type device region, and the second region 100 b is, for example, an N-type device region.
[0094] Next, please refer to Figure 1A and Figure 1B , forming a semiconductor layer 103 on the substrate 100 in the first region 100a. The material of the semiconductor layer 103 of the present invention includes low temperature polysilicon (LTPS), and its manufacturing process temperatu...
no. 2 example
[0106] Figure 2A to Figure 2D It is a schematic cross-sectional view of a manufacturing method of a semiconductor device according to a second embodiment of the present invention. The second embodiment is similar to the first embodiment, the differences will be described below, and the similarities will not be repeated.
[0107] First, please refer to Figure 2A , providing a substrate 200 . The substrate 200 has a first region 200a and a second region 200b. In one embodiment, the first region 100 a is, for example, a P-type device region, and the second region 100 b is, for example, an N-type device region. Next, a semiconductor layer 203 is formed on the substrate 200 in the first region 200a. Then, a dielectric layer 204 is formed on the substrate 200 in the first region 200 a and the second region 200 b, and the dielectric layer 204 covers the semiconductor layer 203 . Afterwards, a gate 206 and a gate 208 are respectively formed on the dielectric layer 204 in the fi...
no. 3 example
[0114] 3A to Figure 3B It is a schematic cross-sectional view of a manufacturing method of a semiconductor device according to a third embodiment of the present invention. The third embodiment is similar to the second embodiment, and the differences will be described below, and the similarities will not be repeated.
[0115] First, provide Figure 2B intermediate structure. Then, please refer to Figure 3A , performing a patterning step to form two openings 220 , two openings 222 and one opening 223 in the dielectric layer 204 , the dielectric layer 214 and the dielectric layer 218 . The opening 220 penetrates through the dielectric layer 204 , the dielectric layer 214 and the dielectric layer 218 and respectively exposes the doped region 210 of the semiconductor layer 203 . The opening 222 penetrates through the dielectric layer 218 and exposes a portion of the upper surface of the semiconductor layer 216 . The opening 223 penetrates through the dielectric layer 214 and...
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