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Preparation method for black phosphorus quantum dot-graphene nanosheet three dimensional composite

A technology of graphene nanosheets and composite materials, which is applied in the preparation of three-dimensional composite materials of black phosphorene quantum dots and graphene nanosheets, and in the field of composite material preparation, can solve problems such as affecting electrical properties and reducing electron mobility, and achieve large The effect of applying the foreground

Active Publication Date: 2016-01-06
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, MoS 2 The presence of structural defects in the medium may lead to a decrease in electron mobility, thereby affecting its electrical properties

Method used

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  • Preparation method for black phosphorus quantum dot-graphene nanosheet three dimensional composite
  • Preparation method for black phosphorus quantum dot-graphene nanosheet three dimensional composite

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] (1) First, the 0.001 mg / mL ethanol solution of black phosphorene quantum dots prepared by the shear pulverization method is added to the ethanol solution of 1 mg / mL graphene oxide, and the method of mechanical stirring is used to make the black phosphorene quantum dots adsorb on The surface of graphene oxide, stirring time is 1min.

[0018] (2) Then take 10 mL of black phosphorene quantum dots and graphene oxide ethanol solution and pour it into a polytetrafluoroethylene-lined autoclave with a volume of 25 mL, and carry out solvothermal reaction at 100 °C. After the reaction is finished, a bulk colloidal composite material filled with ethanol is obtained.

[0019] (3) After the block colloid is taken out from the reaction kettle, it is immersed in deionized water for 1 hour, so that the ethanol and water inside the block colloid material are exchanged with each other. Take out the block colloid filled with water and freeze-dry for 6 hours to obtain a porous black phosp...

Embodiment 2

[0022] (1) First, the 0.01mg / mL ethanol solution of black phosphorene quantum dots prepared by the shear pulverization method is added to the ethanol solution of 3 mg / mL graphene oxide, and the method of mechanical stirring is used to make the black phosphorene quantum dots adsorb on The surface of graphene oxide, stirring time is 30min.

[0023] (2) Then take 50 mL of black phosphorene quantum dots and graphene oxide ethanol solution and pour it into a polytetrafluoroethylene-lined autoclave with a volume of 100 mL, and carry out solvothermal reaction at 150 ° C. After the reaction is finished, a bulk colloidal composite material filled with ethanol is obtained.

[0024] (3) After the block colloid is taken out from the reaction kettle, it is immersed in deionized water for 12 hours, so that the ethanol and water inside the block colloid material are exchanged with each other. Take out the massive colloid filled with water and freeze-dry for 36 hours to obtain a porous black...

Embodiment 3

[0029] (1) First, the 0.01mg / mL ethanol solution of black phosphorene quantum dots prepared by the shear pulverization method is added to the ethanol solution of 5 mg / mL graphene oxide, and the method of mechanical stirring is used to make the black phosphorene quantum dots adsorb on The surface of graphene oxide, stirring time is 60min.

[0030] (2) Then take 80 mL of black phosphorene quantum dots and graphene oxide ethanol solution and pour it into a polytetrafluoroethylene-lined autoclave with a volume of 150 mL, and carry out solvothermal reaction at 180 ° C. After the reaction is finished, a bulk colloidal composite material filled with ethanol is obtained.

[0031] (3) After the block colloid is taken out from the reaction kettle, it is immersed in deionized water for 48 hours, so that the ethanol and water inside the block colloid material are exchanged with each other. Take out the massive colloid filled with water and freeze-dry it for 48 hours to obtain a porous bl...

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Abstract

The invention discloses a preparation method for black phosphorus quantum dot-graphene nanosheet three dimensional composite comprising adding an ethanol solution containing black phosphorus quantum dot prepared by using a shear pulverization method into an ethanol solution containing oxidized graphene nanosheet, making black phosphorus quantum dot adsorb on the surface of the oxidized graphene nanosheet by using a mechanical stirring method; pouring the solution into a high pressure reactor with a polytetrafluoroethylene liner to be subjected to a solvothermal reaction, getting a block colloid composite which is full of ethanol when the reaction ends; immersing the block colloid composite removed from the high pressure reactor into deionized water completely to make the ethanol in the block colloid composite exchanges with water, getting a block colloid composite which is full of water; performing freeze drying after removing the block colloid composite to get the required material. The material prepared by the method has potential application prospect on the detection of poisonous and harmful substance and on the microelectronic sensor.

Description

technical field [0001] The invention relates to a method for preparing a black phosphorene quantum dot-graphene nanosheet three-dimensional composite material, which uses a solvothermal method to prepare the three-dimensional composite material, and belongs to the composite material preparation technology. Background technique [0002] Two-dimensional nanomaterials such as graphene and transition metal sulfides have shown extraordinary application potential in many fields such as electronics, sensing and optoelectronic devices due to their excellent physical and structural properties. Among them, graphene has been widely studied as the most representative two-dimensional material. It has ultrahigh carrier mobility, but the lack of a band gap has severely hindered the application of graphene in logic semiconductor devices such as field-effect transistors. As a representative member of the transition metal sulfide semiconductor family, molybdenum disulfide (MoS 2 ) has a sig...

Claims

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Application Information

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IPC IPC(8): C01B31/04C01B25/02B82Y30/00
Inventor 徐峰童日朱重阳
Owner SOUTHEAST UNIV
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