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A device for improving the uniformity of temperature field in crystal growth furnace by physical vapor transport method

A technology of physical vapor transmission and crystal growth furnace, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problem of temperature gradient distribution uniformity limitation, etc. The effect of improving the uniformity of the temperature field

Active Publication Date: 2017-08-08
ENERGY RES INST OF SHANDONG ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The traditional growth furnace optimization scheme focuses on improving the structure and operation process of the growth furnace, ignoring the influence of the winding method of the coil around the growth furnace and its fixing method on the uniformity of the temperature field. The understanding of this effect is still in the stage of production experience. The uniformity of the internal temperature gradient distribution is limited to a certain extent

Method used

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  • A device for improving the uniformity of temperature field in crystal growth furnace by physical vapor transport method
  • A device for improving the uniformity of temperature field in crystal growth furnace by physical vapor transport method
  • A device for improving the uniformity of temperature field in crystal growth furnace by physical vapor transport method

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Embodiment 1

[0023] like image 3 and figure 1 As shown, the present embodiment provides a device for improving the temperature field uniformity of the physical vapor transport method crystal growth furnace, including a crystal growth furnace, which includes a radio frequency power supply 1, a contact electrode 2, a coil 3, an insulating layer 4 and graphite The crucible 5, the radio frequency power supply 1 is contact-connected with the coil 3 through the contact electrode 2, an insulation layer 4 is arranged outside the graphite crucible 5, and a coil 3 is wound on the outer side of the insulation layer 4, and the coil 3 is evenly arranged on the insulation layer in a horizontal axis-symmetric manner. Layer 4 outside.

[0024] The number of coils 3 is single, and the single coil is wound on the outside of the insulation layer in a bow-shaped manner. A single coil is wound around the outer half circle of the insulation layer from top to bottom, and then the single coil is wound around t...

Embodiment 2

[0029] This embodiment provides a device for improving the temperature field uniformity of the physical vapor transport method crystal growth furnace. The fonts are wound and arranged symmetrically on the outside of the insulation layer 4 . The number of coils can also be three or more, and the specific number of coils is selected according to the size and specification of the growth furnace.

[0030] This embodiment uses two coils, and the bending method of each coil is the same. At the symmetrical center of the two coils, the vacant position of one coil will be supplemented by the other, as image 3 Marked by the middle circle, the temperature in the furnace will be more uniform than that of a single coil; while the expansion diagram of a single coil is center-symmetrical, and the coil bending at the center is relatively concentrated, as shown in figure 2 Marked by the middle circle, this part can cause the temperature of the bending part in the furnace to be too high.

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Abstract

The invention relates to a device for improving the uniformity of the temperature field of a crystal growth furnace in a physical vapor transport method. Axisymmetrically arranged on the outer side of the insulation layer, in addition, the coil can rotate around the insulation layer through a rotating device. The present invention improves the uniformity of the temperature field of the growth furnace by changing the winding method of the coil around the growth furnace. The coil of the present invention can be wound into a coil by using a single or multiple wires, and ensures that the coils are arranged around the growth furnace in a horizontal axis-symmetric manner, which helps It is used to reduce the large axial temperature gradient of the growth furnace caused by the spiral arrangement of the coil. In addition, the radio frequency power supply is connected to the coil in a free contact manner, so that the coil can rotate around the growth furnace, realize three-dimensional uniform heating of the growth furnace, and improve the uniformity of the temperature field of the growth furnace.

Description

technical field [0001] The invention relates to a device for improving the temperature field uniformity of a crystal growth furnace by a physical vapor transport method, and belongs to the technical field of crystal growth furnaces. Background technique [0002] Silicon carbide crystals and aluminum nitride crystals have properties such as wide band gap, high thermal conductivity, and high breakdown electric field. They are suitable for the preparation of high-voltage, high-frequency, and high-temperature microelectronic devices, and are widely used in lighting, aerospace, radar detection and other fields. The physical vapor transport (PVT) method is the main method for growing silicon carbide crystals and aluminum nitride crystals. The heat source for the growth furnace is provided by the radio frequency induction graphite crucible. At present, in order to reduce defects such as micropipes and dislocations inside the crystal and improve the quality of the crystal, optimizin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/38C30B29/36C30B23/00
Inventor 杨春振刘光霞陈成敏王立秋许敏
Owner ENERGY RES INST OF SHANDONG ACAD OF SCI