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Terahertz wave detector with readout circuit

A readout circuit and detector technology, applied in the field of terahertz wave detection, can solve the problems of small output detection signal, difficulty, and low signal-to-noise ratio, and achieve the effect of easy integration and small area

Active Publication Date: 2018-07-31
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Due to the relatively low radiation power of current terahertz wave light sources, the current terahertz wave detectors generally require an external optical chopper and lock-in amplifier. The system can detect the terahertz wave detection signal, the system is cumbersome and huge, and it is not easy to realize the array type terahertz wave detector

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  • Terahertz wave detector with readout circuit
  • Terahertz wave detector with readout circuit
  • Terahertz wave detector with readout circuit

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Embodiment Construction

[0015] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0016] The invention discloses a terahertz wave detector with a readout circuit. The terahertz wave detector includes a terahertz wave detection element, an amplifier circuit, an analog-to-digital converter and a low-pass digital filter, wherein the terahertz wave The detection element outputs a DC detection signal proportional to the amplitude of the received terahertz wave signal. The DC detection signal is amplified by the amplifier circuit, and the output signal of the amplifier circuit is converted into a digital signal by an analog-to-digital converter. The high-frequency noise is filtered out by a digital filter to extract the required detection signal.

[0017] Preferably, the terahertz wave detection element is, ...

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Abstract

A terahertz wave detector with a readout circuit includes a terahertz wave detection element, an amplifier circuit, an analog-to-digital converter and a low-pass digital filter. Among them, the terahertz wave detection element includes an antenna, a matching network and a field effect transistor for detection; wherein, the antenna transmits the received terahertz wave signal to the source of the field effect transistor through the matching network, and the gate of the field effect transistor External fixed bias, the drain of the field effect transistor outputs a DC detection signal proportional to the amplitude of the received terahertz wave signal, the DC signal is amplified by the amplifier circuit, and the output signal of the amplifier circuit is converted into a digital signal by an analog-to-digital converter , the output digital signal is filtered out by a low-pass digital filter to remove high-frequency noise to extract the required detection signal. The terahertz wave detector of the present invention can be realized on a silicon-based process, is easy to integrate, has a small area, and can realize a large-scale array type terahertz wave detector.

Description

technical field [0001] The invention relates to the technical field of terahertz wave detection, in particular to a terahertz wave detector with a readout circuit. Background technique [0002] Terahertz wave refers to electromagnetic waves with a frequency in the range of 0.1THz to 1THz, and its wave band is between micron waves and infrared light. Terahertz waves have many unique characteristics. For example, the penetrating properties of terahertz waves make them useful in security inspection imaging, and terahertz waves have the same frequency as the vibration of many biological macromolecules, which also opens up new avenues for biomedicine. Due to the relatively low radiation power of current terahertz wave light sources, the current terahertz wave detectors generally require an external optical chopper and lock-in amplifier. Only the system can detect the terahertz wave detection signal, the system is complicated and bulky, and it is not easy to realize the array typ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/24
Inventor 刘朝阳刘力源吴南健
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI