Preparation method of multi-patterning mask

Abstract

The invention relates to the technical field of semiconductor device preparation, and particularly relates to a preparation method of a multi-patterning mask. The multi-patterning mask is prepared with sacrificial layers acting as masks or acting as side wall layers through deposition so that difference of morphology of the sidewalls of the two sides of the side walls of the multi-patterning mask layer prepared in a conventional technical scheme can be effectively improved, performance of a semiconductor device is enhanced, and yield rate of the semiconductor device is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor device preparation, in particular to a method for preparing a multi-patterned mask. Background technique [0002] In the field of semiconductor manufacturing, photoresist materials are used to transfer mask images to one or more material layers, for example, transfer mask images to metal layers, dielectric layers or semiconductor substrates. However, as the feature size of the semiconductor process continues to shrink, it becomes more and more difficult to form a mask pattern with a small feature size in the material layer by using a photolithography process. [0003] In order to improve the integration of semiconductor devices, the industry has proposed a variety of patterned mask preparation methods, among which the self-aligned double patterning process is one of them, but the semiconductor pattern formed by the self-aligned double pattern The morphology of the sidewalls on both sides wi...

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Problems solved by technology

However, with the continuous reduction of the feature size of the semiconductor process, it is becoming more and more difficult to form a mask pattern with a small feature size in the material layer by using the photolithography process.

[0003] In order to improve the integration of semiconductor devices, the industry has proposed a variety of patterned mask preparation methods, among which the self-aligned double patterning process is one of them, but the semiconductor pattern formed by using the self-aligned double pattern The morphology of the sidewalls on both sides will be different, which will affect the performance of semiconductor devices

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