Photomask, method of manufacturing photomask, and method of manufacturing display device

Abstract

The present invention relates to a photomask, a photomask manufacturing method, a photomask blank, and a display device manufacturing method. It is advantageously suitable for the exposure environment of a display device manufacturing mask and can stably transfer a minute pattern. The photomask has a transfer pattern formed by patterning a semi-transmissive film and a low-transmission film formed on a transparent substrate, respectively, and the transfer pattern has a translucent portion exposing the transparent substrate. It consists of a main pattern with a diameter W1 (μm); an auxiliary pattern with a width d (μm), which is arranged near the main pattern and is composed of a semi-transmissive portion with the semi-transmissive film formed on the transparent substrate; and the configuration In the area of ​​the transfer pattern except where the main pattern and the auxiliary pattern are formed, at least a low-light-transmitting portion of the low-light-transmitting film is formed on the transparent substrate, the diameter W1 of the main pattern, the semi-transmissive part There is a predetermined relationship between the light transmittance T1 of the semi-transmissive part and the width d of the semi-transmissive part.

Description

technical field [0001] The present invention relates to a photomask blank, a photomask, a method for manufacturing the photomask, and a method for manufacturing a display device using the photomask, which are effectively used in the manufacture of display devices typified by liquid crystals and organic EL. Background technique [0002] Patent Document 1 describes, as a photomask used in the manufacture of semiconductor devices, a phase shift mask in which four auxiliary light-transmitting portions are arranged parallel to each side of the main light-transmitting portion (hole pattern). , the phases of the light in the main light-transmitting part and the auxiliary light-transmitting part are reversed. [0003] Patent Document 2 describes a large phase shift mask including a transparent substrate and a semitransparent phase shift film formed on the transparent substrate. [0004] Patent Document 1: Japanese Patent Application Laid-Open No. 3-15845 [0005] Patent Document 2...

AI Technical Summary

Problems solved by technology

For example, switching to a high-resolution exposure device with a high NA (numerical aperture) requires a large investment, and price matching with a display device cannot be obtained.

Or, for changing the exposure wavelength (short wavelength such as ArF excimer laser is used as a single wavelength), it is difficult to apply it to a display device with a large area, and even if it is applied, in addition to reducing the production efficiency, a considerable amount of time is required. Not suitable for investment

[0011] In addition, as will be described later, photomasks for display devices have manufacturing constraints or various unique problems that are different from photomasks for semiconductor device manufacturing.

[0012] Based on the above facts, it is practically difficult to transfer the photomask of Document 1 as it is to the manufacture of display devices.

In addition, the halftone type phase shift mask described in Document 2 is described as having an improved light intensity distribution compared with a binary mask, but there is still room for performance improvement.

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