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Photo mask, production method thereof, and production method of display device

A technology for a display device and a manufacturing method, which is applied in the direction of photolithography exposure device, microlithography exposure equipment, and pattern surface photolithography technology, etc., which can solve the problems of reduced production efficiency, large investment, and inability to match the price of display devices, etc. question

Active Publication Date: 2020-01-10
HOYA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, switching to a high-resolution exposure device with a high NA (numerical aperture) requires a large investment, and price matching with a display device cannot be obtained.
Or, for changing the exposure wavelength (short wavelength such as ArF excimer laser is used as a single wavelength), it is difficult to apply it to a display device with a large area, and even if it is applied, in addition to reducing the production efficiency, a considerable amount of time is required. Not suitable for investment
[0012] In addition, as will be described later, photomasks for display devices have manufacturing constraints or various unique problems that are different from photomasks for semiconductor device manufacturing.
[0013] Based on the above facts, it is practically difficult to transfer the photomask of Document 1 as it is to the manufacture of display devices.
In addition, the halftone type phase shift mask described in Document 2 is described as having an improved light intensity distribution compared with a binary mask, but there is still room for performance improvement.

Method used

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  • Photo mask, production method thereof, and production method of display device
  • Photo mask, production method thereof, and production method of display device
  • Photo mask, production method thereof, and production method of display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0132] Such as Figure 4 As shown, the photomask of Example 1 has the transfer pattern of the present invention. Here, the main pattern is a square with one side (diameter) (that is, W1) of 2.0 (μm), the auxiliary pattern is an octagonal strip with a width d of 1.3 (μm), and the distance between the center of the main pattern and the width center of the auxiliary pattern is The pitch P is 4 (μm).

[0133] The auxiliary pattern is formed by forming a semi-transparent film on a transparent substrate. The transmittance T1 of the light for exposure (with respect to h-line) of the light semitransmissive film was 70 (%), and the phase shift amount was 180 degrees. In addition, the low-transmittance portion surrounding the main pattern and the auxiliary pattern is substantially composed of a light-shielding film (OD>2) that does not transmit exposure light.

[0134] For any of the photomasks of ratios 1-1, 1-2, and Example 1, a diameter W2 of 2.0 μm (W1=W2. That is, the diameter W...

Embodiment 2

[0156] Such as Image 6 As shown, the photomask of Example 2 is the transfer pattern of the present invention. The main pattern of the photomask of embodiment 2 is that the diameter W1 (one side of square) of main pattern is the square of 2.5 (μm), and auxiliary pattern is the octagonal band that width d is 1.3 (μm), main pattern center and auxiliary pattern The distance between the width centers of the patterns, that is, the pitch P was 4 (μm).

[0157] Using the photomasks of Comparative Example 2-1, Comparative Example 2-2, and Example 2, hole patterns with a diameter of 2.0 μm were formed on the transfer target body. That is, the mask offset (β=W1−W2) of these photomasks was set to 0.5 (μm). The exposure conditions used in the simulation are the same as those of the photomasks of Comparative Examples 1-1 and 1-2 and Example 1 described above.

[0158] from Image 6 From the data shown, it can be seen that when the photomask of Example 2 was used, excellent DOF and MEEF...

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Abstract

The invention relates to a photo mask, a production method thereof, a photo mask blank, and a production method of a display device. The invention provides a photo mask which is made compatible advantageously with an exposure environment of a mask for producing a display device and is so excellent that a fine pattern can be transferred stably. The photo mask includes a transfer pattern which is deposited on a transparent substrate and is formed by patterning a predetermined semi-translucent film and a predetermined low translucent film respectively. The transfer pattern has: a main pattern which comprises a transparent substrate-exposed translucent part and has a diameter of W1([mu]m); an auxiliary pattern which is disposed in the vicinity of the main pattern, comprises a semi-translucentpart obtained by forming the semi-translucent film on the transparent substrate and has the width of d([mu]m); and a low translucent part which is disposed in a region of the transfer pattern, in which region the main pattern and the auxiliary pattern are not formed, and is obtained by forming the low translucent film, at the least, on the transparent substrate. The photo mask has a predeterminedrelationship among W1, T1 and d.

Description

[0001] The patent application of the present invention is aimed at the Chinese patent application number 201510418721.9, the patent applicant is HOYA Co., Ltd., the invention name is "photomask, photomask manufacturing method, photomask blank and manufacturing method of display device", and the filing date is Divisional application filed on July 16, 2015. technical field [0002] The present invention relates to a photomask blank, a photomask, a method for manufacturing the photomask, and a method for manufacturing a display device using the photomask, which are effectively used in the manufacture of display devices typified by liquid crystals and organic EL. Background technique [0003] Patent Document 1 describes, as a photomask used in the manufacture of semiconductor devices, a phase shift mask in which four auxiliary light-transmitting portions are arranged parallel to each side of the main light-transmitting portion (hole pattern). , the phases of the light in the mai...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/32G03F1/80G03F7/20
CPCG03F1/22G03F7/2063G03F7/70275G03F7/2002G03F1/20G03F1/56
Inventor 今敷修久吉川裕菅原浩幸
Owner HOYA CORP
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