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Semiconductor device and manufacturing method containing chalcogen atoms

A technology of semiconductors and single crystal semiconductors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as complexity

Active Publication Date: 2018-08-14
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the segregation effect during the crystal pulling process results in significant axial variation of the dopant concentration along the longitudinal axis of the silicon rod
Additionally, in Cz wafers obtained from silicon rods, radial fluctuations (stripes) of dopant species lead to significant radial variations in specific resistance
Higher variations in the initial background doping complicate the fabrication of semiconductor devices (e.g. power semiconductor devices) from such semiconductor crystals

Method used

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  • Semiconductor device and manufacturing method containing chalcogen atoms
  • Semiconductor device and manufacturing method containing chalcogen atoms
  • Semiconductor device and manufacturing method containing chalcogen atoms

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Embodiment Construction

[0016] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustrations specific embodiments in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. For example, features illustrated or described with respect to one embodiment can be used on or combined with other embodiments to yield a still further embodiment. The present invention is intended to cover such modifications and variations. The examples are described using specific language which should not be construed as limiting the scope of the appending claims. The drawings are not drawn to scale and are for illustration purposes only. For the sake of clarity, the same elements are indicated by corresponding reference numerals in the different figures, if not stated otherwise.

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Abstract

Various embodiments of the present invention relate to semiconductor devices and fabrication methods that include chalcogen atoms. The semiconductor device comprises a monocrystalline semiconductor body having a first surface and a second surface parallel to the first surface. The semiconductor body contains a background doping of phosphorus atoms and / or hydrogen atoms and chalcogen atoms. The concentration of chalcogen atoms is at least 1E12 cm‑3. The ratio of chalcogen atoms to background doped atoms is in the range of 1:9 to 9:1.

Description

technical field [0001] The present invention relates generally to semiconductor devices, and in particular to semiconductor devices and methods of fabrication comprising chalcogen atoms. Background technique [0002] Generally, semiconductor wafers for producing power semiconductor devices such as power semiconductor diodes and IGBTs (Insulated Gate Bipolar Transistors) are obtained from silicon ingots grown in a floating zone process (Fz wafers). Semiconductor wafers obtained in the Czochralski process (Cz wafers) from silicon rods Czochralski drawn from molten raw material in a furnace are relatively inexpensive and can have larger diameters. However, segregation effects during the crystal pulling process lead to significant axial variations in dopant concentration along the longitudinal axis of the silicon rod. In addition, in Cz wafers obtained from silicon rods, radial fluctuations (stripes) of dopant species lead to significant radial variations in specific resistance...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/04H01L29/06H01L29/12H01L21/328H01L21/334
CPCH01L29/04H01L29/06H01L29/12H01L29/66053H01L29/66075H01L21/2253H01L21/26506H01L29/0692H01L29/0804H01L29/0834H01L29/1004H01L29/167H01L29/36H01L29/732H01L29/7395H01L29/8611H01L21/26513H01L21/324H01L29/1095
Inventor G·施密特
Owner INFINEON TECH AG