Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor laser stack array structure

A semiconductor and laser technology, applied in the field of large-channel semiconductor laser stacked array structure, can solve the problems of difficulty in ensuring good heat dissipation, the influence of the normal operation of the stacked array, and the inability to achieve heat dissipation of the stacked array, so as to ensure long-term high reliability and stable operation, good Heat dissipation and flexible structure

Active Publication Date: 2016-02-10
ZHENGZHOU UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Semiconductor laser stack heat dissipation is a technical problem in semiconductor laser stack packaging at present, because the output power of semiconductor laser stacks can reach several thousand watts, and the conversion efficiency of semiconductor lasers is low, so a lot of heat will be generated during the working process , which is equivalent to the output laser power, it is difficult to ensure good heat dissipation of each semiconductor laser array module, and the heat dissipation of the entire stack cannot be realized, and the normal operation of the stack is greatly affected

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor laser stack array structure
  • Semiconductor laser stack array structure
  • Semiconductor laser stack array structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Attached below Figure 1~7 The present invention will be further described in detail with specific embodiments.

[0028] The semiconductor laser stack structure provided by the present invention includes a semiconductor laser array module. The semiconductor laser array module includes a P electrode and an N electrode, and an insulating sheet and an array chip are packaged between the P electrode and the N electrode. The P surface electrode thickness of the semiconductor laser array module is generally 2-8mm, and its P electrode and N electrode are usually made of oxygen-free copper.

[0029] The semiconductor laser array structure of the present invention also includes a water tank module. Two completely isolated first water tanks and second water tanks are arranged in the water tank module. One end of the first water tank and the second water tank is respectively connected with a copper pipe, and then through the copper pipe The water inlet and outlet connected to the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a semiconductor laser stack array structure, which comprises semiconductor laser array modules and a water tank module, wherein a first water tank and a second water tank, which are completely isolated, are arranged in the water tank module; one end of each of the first water tank and the second water tank is respectively connected with a water inlet and a water outlet of an external cold water source; inflow holes are formed in a water tank body which is connected with the water inlet; outflow holes are formed in the water tank body which is connected with the water outlet; the inflow holes correspond to the outflow holes one by one; a U-shaped channel is formed in the center of a P electrode of each semiconductor laser array module; and two channel openings of each U-shaped channel are connected with the inflow holes and the outflow holes, which are formed in the tank bodies respectively. According to the semiconductor laser stack array structure, the packaged semiconductor laser array modules are integrated, so that high density packaging of semiconductor lasers is achieved; high-power laser output is achieved; and simultaneous cooling on each semiconductor laser array module is achieved by a large channel, so that the high-power laser output is achieved by the overall stack array structure; and high reliability and stability work of the laser stack array is ensured.

Description

technical field [0001] The invention relates to the field of laser packaging, in particular to a large-channel semiconductor laser stack structure. Background technique [0002] The semiconductor laser stack is formed by vertical stacking and packaging of semiconductor laser array chips. The semiconductor laser array chip is composed of many semiconductor laser light-emitting units. These light-emitting units form an array chip on a chip that has not been cleaved. (Bar bar). At present, the packaging of semiconductor laser stacks is a very core technology. The high-precision positioning of the array chips during the packaging process and the timely dissipation of heat generated during laser operation are two key issues that need to be considered. Because there is no automated equipment in the stack packaging process, the whole process is entirely manual, so the yield is very low. The semiconductor laser array chip can realize automatic packaging, which ensures the high-pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S5/024H01S5/40
Inventor 程东明
Owner ZHENGZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products