Gas inlet device and semiconductor machining device

A gas intake device and gas technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, gaseous chemical plating, etc., can solve the problems of many process variables, heavy workload, and the influence of air flow uniformity, so as to improve process efficiency, The effect of increasing effectiveness and efficiency and improving the uniformity of airflow distribution

Active Publication Date: 2016-02-17
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The above air intake device 14 inevitably has the following problems in practical applications, that is: since each air inlet is arranged at the center of the corresponding sub-cavity, the reaction gas entering the sub-chamber is directed towards the middle. The diffusion speed of the gas inlet is greater than that of the gas inlet toward both sides, resulting in a difference in the flow rate of the reaction gas corresponding to each gas outlet, that is, the jet effect
Affected by this jet effect, vortices appear near the gas inlet where the gas flow velocity differs, resulting in uneven gas flow distributi

Method used

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  • Gas inlet device and semiconductor machining device
  • Gas inlet device and semiconductor machining device
  • Gas inlet device and semiconductor machining device

Examples

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no. 1 example

[0050] Figure 5A It is a schematic diagram of the air intake device provided by the first embodiment of the present invention. see Figure 5A , the air inlet device includes an air inlet 20 and an air inlet chamber 100, both of which are located at the top of the reaction chamber 50, wherein the air inlet chamber 100 is used to flow the reaction gas flowing out from the air inlet 20 in the vertical direction (Y direction) ) into the reaction chamber 50. The so-called vertical direction refers to the direction perpendicular to the surface of the processed workpiece placed in the reaction chamber 50; The direction in which the workpiece surface is machined. During the process, the reaction gas flows into the reaction chamber 50 vertically from the top of the reaction chamber 50, and when it reaches the surface of the workpiece to be processed, it reacts with it, and the residual gas after the reaction is released together with the carrier gas. The bottom of the reaction cha...

no. 2 example

[0070] Figure 3A The schematic diagram of the air intake device provided by the second embodiment of the present invention. see Figure 3A Compared with the above-mentioned first embodiment, the gas inlet device provided in this embodiment differs only in that: in this embodiment, the 1st to N-1 level uniform gas layers transport the reaction gas step by step along the horizontal direction, and the 1st to N-1 The N-level uniform gas layer transports the reaction gas in the vertical direction.

[0071] specifically, Figure 3B It is a sectional view of the air intake device provided by the second embodiment of the present invention. Figure 3C for Figure 3B Sectional view along line A-A. Please also refer to Figure 3B and 3C , for the 1st to N-1 level gas distribution layers in the air intake chamber 100, compared with the 1st to N-1 level gas distribution layers in the above-mentioned first embodiment, the structure of the two is the same, but only The arrangement d...

no. 3 example

[0076] Figure 4A It is a schematic diagram of the air intake device provided by the third embodiment of the present invention. see Figure 4A Compared with the above-mentioned second embodiment, the air intake device provided by this embodiment is only different in that: N=3, and in the third-level gas uniform layer, the number of shunts allocated by each subunit is four, That is, each sub-unit 43 in the third-level gas homogenization layer directly and evenly distributes the branches allocated by all the sub-units in the second-level gas homogenization layer into four branches along the direction perpendicular to the direction of conveying the reaction gas in one-to-one correspondence. .

[0077] specifically, Figure 4B It is a sectional view of the air intake device provided by the third embodiment of the present invention. see Figure 4B , as for the first to second level gas homogenization layers in the air intake chamber 200 , compared with the first to second leve...

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Abstract

The invention provides a gas inlet device and a semiconductor machining device. The gas inlet device comprises a gas inlet and a gas inlet chamber. The gas inlet chamber comprises N stages of gas uniformizing layers. The first stage of gas uniformizing layer comprises one subunit which is used for evenly distributing reaction gas coming from the gas inlet into at least two branches in the direction perpendicular to the reaction gas conveying direction. The ith stage of gas uniformizing layer comprises a plurality of subunits which are used for evenly distributing all branches distributed by all subunits in the i-1th stage of gas uniformizing layer into at least two branches again in a one-to-one correspondence manner in the direction perpendicular to the reaction gas conveying direction, wherein the number of the branches is an even number, and i is equal to 2, 3,...N. All subunits in the Nth stage of gas uniformizing layer are used for conveying all branches which are independently distributed into a reaction chamber from the top of the reaction chamber. By means of the gas inlet device, the distribution uniformity of gas flow in the reaction chamber can be improved, effectiveness and efficiency of gas flow regulation can be improved, and therefore the process efficiency can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to an air intake device and semiconductor processing equipment. Background technique [0002] The basic principle of chemical vapor deposition epitaxial growth is to transport the reaction gas into the reaction chamber, and make the reaction gas react chemically on the surface of the substrate by means of heating, and the obtained growth atoms are deposited on the surface of the substrate, and grow to form single Crystal thin film. In the process of chemical vapor deposition epitaxial growth, gas transportation and control systems (including pipelines, flow rates and valves, etc.) are usually used to ensure timely and accurate transportation of reaction gases to the reaction chamber. [0003] In order to meet the requirements of uniform doping and uniform thickness required for growing thin films, and to improve the concentration and thickness uniformity of the thi...

Claims

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Application Information

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IPC IPC(8): C23C16/455H01L21/02H01J37/32
Inventor 宋巧丽
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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