Gas inlet device and semiconductor machining device

Abstract

The invention provides a gas inlet device and a semiconductor machining device. The gas inlet device comprises a gas inlet and a gas inlet chamber. The gas inlet chamber comprises N stages of gas uniformizing layers. The first stage of gas uniformizing layer comprises one subunit which is used for evenly distributing reaction gas coming from the gas inlet into at least two branches in the direction perpendicular to the reaction gas conveying direction. The ith stage of gas uniformizing layer comprises a plurality of subunits which are used for evenly distributing all branches distributed by all subunits in the i-1th stage of gas uniformizing layer into at least two branches again in a one-to-one correspondence manner in the direction perpendicular to the reaction gas conveying direction, wherein the number of the branches is an even number, and i is equal to 2, 3,...N. All subunits in the Nth stage of gas uniformizing layer are used for conveying all branches which are independently distributed into a reaction chamber from the top of the reaction chamber. By means of the gas inlet device, the distribution uniformity of gas flow in the reaction chamber can be improved, effectiveness and efficiency of gas flow regulation can be improved, and therefore the process efficiency can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to an air intake device and semiconductor processing equipment. Background technique [0002] The basic principle of chemical vapor deposition epitaxial growth is to transport the reaction gas into the reaction chamber, and make the reaction gas react chemically on the surface of the substrate by means of heating, and the obtained growth atoms are deposited on the surface of the substrate, and grow to form single Crystal thin film. In the process of chemical vapor deposition epitaxial growth, gas transportation and control systems (including pipelines, flow rates and valves, etc.) are usually used to ensure timely and accurate transportation of reaction gases to the reaction chamber. [0003] In order to meet the requirements of uniform doping and uniform thickness required for growing thin films, and to improve the concentration and thickness uniformity of the thi...

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Problems solved by technology

[0006] The above air intake device 14 inevitably has the following problems in practical applications, that is: since each air inlet is arranged at the center of the corresponding sub-cavity, the reaction gas entering the sub-chamber is directed towards the middle. The diffusion speed of the gas inlet is greater than that of the gas inlet toward both sides, resulting in a difference in the flow rate of the reaction gas corresponding to each gas outlet, that is, the jet effect

Affected by this jet effect, vortices appear near the gas inlet where the gas flow velocity differs, resulting in uneven gas flow distribution in the reaction chamber

[0007] Although 28 regulating valves can be used to adjust the air flow of 28 air outlets individually to compensate for the flow rate difference of each air outlet, this adjustment method is not only a large workload and complicated, but also because each air outlet is closed. The overall air flow uniformity of the reaction chamber is affected, and there are too many process variables, which is not conducive to the stable control of the process, and the effectiveness and efficiency of this adjustment method are not high, and it is difficult to meet the continuous production requirements

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