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mems microphone and method of forming the same

A microphone, circumferential direction technology, applied in the field of MEMS, can solve problems such as poor performance of MEMS microphones, and achieve the effects of improving sensitivity, reducing obstacles, and increasing Q value

Active Publication Date: 2018-03-30
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The problem solved by the invention is that existing MEMS microphones have poor performance

Method used

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  • mems microphone and method of forming the same

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Embodiment Construction

[0051] The inventor analyzed the problems existing in the prior art and found that: with reference to figure 1 , there is air in the gap 3, when the sound acts on the upper surface of the vibrating membrane 2 to cause the vibrating membrane 2 to vibrate, when the vibrating membrane 2 vibrates, part of the air can be compressed and move towards the conductive electrode plate 1 along the direction A, and the air passes through the through hole 11 discharge. However, there is still some air flowing along the horizontal direction B. Since the support layer 4 is an annular closed space, this part of air cannot be discharged and will hinder the movement of the vibrating membrane 2 to form damping. In this way, part of the sound energy acting on the vibrating membrane 2 is transformed into vibration mechanical energy of the vibrating membrane 2, and the other part is consumed by air damping. The ratio of the sound energy acting on the vibrating membrane 2 to the energy consumed by t...

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Abstract

The present invention discloses an MEMS microphone and method for forming the same, wherein the method for forming the MEMS microphone comprises: providing a wafer with a conductive plate on a front side thereof, the conductive plate including a vibration region and a support region; forming several through holes in the conductive plate in positions corresponding to the position of the vibration region, and forming a first sacrifice layer on the conductive plate and in the through holes; forming several grooves in the first sacrifice layer in positions corresponding to the position of the support region, the grooves passing through a side wall of the first sacrifice layer; forming a second sacrifice layer in the grooves; forming a vibration membrane on the first and second sacrifice layers; forming a back cavity on a back side of the first wafer in a position corresponding to the position of the vibration region; and removing the first and second sacrifice layers in positions corresponding to the vibration region. Air in the gap of the MEMS microphone is exhausted through the grooves, which reduces the damping for sound propagation from air so that acoustics energy reaching the vibration membrane is high. Therefore, the sensitivity of the MEMS microphone is improved, such that the MEMS microphone has better performance.

Description

technical field [0001] The invention relates to the technical field of MEMS, in particular to a MEMS microphone and a forming method thereof. Background technique [0002] MEMS microphones using Micro-Electro-Mechanical System (MEMS, Micro-Electro-Mechanical System) technology are gradually replacing traditional electret capacitor microphones (Electret Capacitance Microphone, ECM) due to their miniaturization and lightness. [0003] refer to figure 1 , an existing MEMS microphone includes: [0004] Conductive plate 1; [0005] A plurality of spaced through holes 11 located in the conductive plate 1; [0006] The vibrating membrane 2 located on the conductive electrode plate 1 , the support layer 4 located between the vibrating membrane 2 and the conductive electrode plate 1 , the supporting layer 4 is used to support the vibrating membrane 2 . The supporting layer 4 is an annular closed structure, and the supporting layer 4 encloses a gap 3 , and the gap 3 provides a vib...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04R19/04H04R31/00
Inventor 何昭文李曼曼
Owner SEMICON MFG INT (SHANGHAI) CORP