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power semiconductor module

A power semiconductor and module configuration technology, which is applied to semiconductor devices, semiconductor/solid-state device components, semiconductor/solid-state device testing/measurement, etc., to achieve the effects of improving reliability, saving costs, and simplifying manufacturing

Active Publication Date: 2018-10-16
HITACHI ENERGY SWITZERLAND AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, there is still potential to improve the reliability of power semiconductor modules

Method used

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  • power semiconductor module

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Embodiment Construction

[0054] figure 1 , the configuration of the power module 10 is schematically shown. Specifically, the internal structure of the power module 10 described above is described. The power module 10 includes a housing 12, such as a plastic box, in which at least one power semiconductor device 14 is disposed. By way of example, the semiconductor device 14 may be an insulated gate bipolar transistor (IGBT), a diode, a metal oxide semiconductor field effect transistor (MOSFET), or the like. according to figure 1 , diodes and IGBTs are provided. A semiconductor device 14 or a plurality of semiconductor devices 14 are connectable via via contacts (such as terminals 16), for example as connections to bus bars, and preferably via gate terminals 18, wherein the semiconductor devices 14 are preferably via aluminum bond wires 20 combined.

[0055] The semiconductor device 14 may further be disposed on a substrate 24 . By way of non-limiting example, substrate 24 may be formed as an alum...

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Abstract

The invention relates to a power semiconductor module (10), which comprises a casing (12) and a substrate (24) arranged inside the casing (12), at least one conductive path (15) is arranged on the substrate (24), further Comprising at least one power semiconductor device (14) arranged inside the housing (12) and arranged on and electrically connected to the conducting path (15), and at least one contact for externally contacting the semiconductor device (14), wherein the module (10) further comprising a self-supporting sensor system disposed inside the housing (12), the sensor system comprising sensors for detecting physical parameters or chemical substances, transmission means for wirelessly transmitting data provided by the sensors to a receiver outside the module and an energy source for supplying all required energy to the sensor system, and the sensor comprises at least one sensor for detecting current, voltage magnetic field, mechanical stress and humidity. According to the invention, it is possible to provide a power semiconductor module (10) which allows increased reliability and durability of such a module, a module configuration of which it is a part, and an electronic device equipped with such a power semiconductor module (10).

Description

technical field [0001] The present invention relates to power semiconductor modules with the ability to provide safer and more reliable performance. In particular, the invention relates to a power semiconductor module containing a sensor system which is designed in a self-sustaining manner. Background technique [0002] A wide variety of power semiconductor modules are known and used in many different electronic devices. The requirement for these power electronic modules is to provide suitable reliability and safety. [0003] For traction applications, for example, power semiconductor modules may have a service life of up to 30 years in operation. Therefore, intensive certification testing is required to certify power modules against these requirements. In order to better understand the module behavior and failure physics, it is beneficial to examine several parameters during certification testing. [0004] On the other hand, monitoring of physical parameters in the powe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/34H01L35/00H10N10/00
CPCH01L23/34H01L2924/0002H01L23/3735H01L23/38H01L2224/48137H01L2224/73265H01L2924/13055H01L2924/13091H01L2224/32225H01L2224/4903H10N10/00H01L2924/00H01L2224/48227H01L2924/00012H01L22/30H01L25/165
Inventor H·贝耶
Owner HITACHI ENERGY SWITZERLAND AG