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Method for removing ITO (tin indium oxide) on surface of base plate

A substrate surface and substrate technology, which is applied in the field of ITO removal on the substrate surface, can solve the problems of etching cost, difficult safety control, easy cracking, easy acid leakage at the edge of the substrate, etc.

Active Publication Date: 2016-03-30
WGTECH JIANGXI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the physical grinding method removes the thin film transistor by grinding, which may cause the thickness of the substrate to be too thin to meet the customer's specified requirements. At the same time, it is easy to crack during grinding, causing greater losses; when the chemical aqua regia etching method removes the thin film transistor, the edge of the substrate is prone to acid leakage. At the same time, the cost and safety of aqua regia etching are not easy to control

Method used

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  • Method for removing ITO (tin indium oxide) on surface of base plate
  • Method for removing ITO (tin indium oxide) on surface of base plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] The method for removing the ITO on the substrate surface of embodiment 1 comprises the following steps:

[0055] (1) Use alcohol with a concentration of 99.7% to wipe the substrate with ITO on the surface to remove surface stains. In the substrate with ITO on the surface, the material of the substrate is a TFT glass substrate, and the thickness of the substrate is 0.4mm. The thickness is 25nm.

[0056] (2) The substrate with ITO on the surface is placed in an acid tank and soaked for 10 minutes for pickling. The acid solution in the acid tank includes 20% hydrochloric acid, 30% acetic acid and 50% water by weight percentage. Bubble tubes are installed at the bottom of the tank to improve the speed and uniformity of pickling.

[0057] (3) Soak the substrate with ITO on the pickled surface in flowing pure water for 10 minutes to remove the acid solution on the surface, then place the substrate with ITO in an alkali tank to soak for 10 minutes for alkali cleaning, the The ...

Embodiment 2

[0061] The method for removing the ITO on the substrate surface of embodiment 2 comprises the following steps:

[0062] (1) Use alcohol with a concentration of 99.7% to wipe the substrate with ITO on the surface to remove surface stains. In the substrate with ITO on the surface, the material of the substrate is a TFT glass substrate, and the thickness of the substrate is 0.4mm. The thickness is 25nm.

[0063] (2) The substrate with ITO on the surface is placed in an acid tank and soaked for 10 minutes for pickling. The acid solution in the acid tank includes 22% hydrochloric acid, 33% acetic acid and 45% water by weight percentage. Bubble tubes are installed at the bottom of the tank to improve the speed and uniformity of pickling.

[0064] (3) Soak the substrate with ITO on the pickled surface in flowing pure water for 10 minutes to remove the acid solution on the surface, then place the substrate with ITO in an alkali tank to soak for 10 minutes for alkali cleaning, the Th...

Embodiment 3

[0068] The method for removing the ITO on the substrate surface of embodiment 3 comprises the following steps:

[0069] (1) Use alcohol with a concentration of 99.7% to wipe the substrate with ITO on the surface to remove surface stains. In the substrate with ITO on the surface, the material of the substrate is a TFT glass substrate, and the thickness of the substrate is 0.4mm. The thickness is 25nm.

[0070] (2) The substrate with ITO on the surface is placed in an acid tank and soaked for 10 minutes for pickling. The acid solution in the acid tank includes 25% hydrochloric acid, 35% acetic acid and 40% water. Bubble tubes are installed at the bottom of the tank to improve the speed and uniformity of pickling.

[0071] (3) Soak the substrate with ITO on the pickled surface in flowing pure water for 10 minutes to remove the acid solution on the surface, then place the substrate with ITO in an alkali tank to soak for 10 minutes for alkali cleaning, the The lye comprises 10% o...

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Abstract

The invention relates to a method for removing ITO on the surface of a base plate. The method of removing ITO on the surface of the base plate comprises the following steps: placing the base plate with the ITO on the surface in acid liquor, immersing, carrying out acid washing, wherein the acid liquor comprises, by weight, hydrochloric acid 20% -25 %, acetic acid 30% -35 % and water 40% -50%; washing the base plate with the ITO on the surface after acid washing, removing the acid liquor on the surface, then placing in alkali liquor, carrying out alkali washing, and obtaining the base plate without the ITO; wherein the alkali liquor comprises by weight, alkali 8% -10 %, nonionic surfactant 15% -20 % and water 70% -77%; the method for removing the ITO on the surface of the base plate is low in cost, is relatively safe and is not liable to cause the base plate to fracture.

Description

technical field [0001] The invention relates to a method for removing ITO on the surface of a substrate. Background technique [0002] The thin film transistor substrate has good transparent and conductive properties, and has the advantages of wide band gap, high light transmittance in the visible light region and low resistivity, so it is widely used in flat panel display devices, solar cells and other optoelectronic devices. The thin film transistor substrate is made by depositing a layer of indium tin oxide (ITO) on the surface of the substrate by methods such as magnetron sputtering. When the ITO layer does not meet the requirements or has defects, the ITO layer must be removed. [0003] At present, the ITO layer is generally etched by physical grinding and chemical configuration of aqua regia. However, the physical grinding method removes the thin film transistor by grinding, which may cause the thickness of the substrate to be too thin to meet the customer's specifie...

Claims

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Application Information

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IPC IPC(8): H01L21/77H01L27/12H01L21/465
CPCH01L21/465H01L21/77H01L27/1259H01L2021/775
Inventor 张迅张伯伦易伟华
Owner WGTECH JIANGXI
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