N type fin type field effect transistor and formation method thereof

Abstract

An N type fin type field effect transistor and a formation method thereof. The formation method of N type fin type field effect transistor includes the following steps: a semiconductor substrate is provided which has a protruding fin part, the fin part includes a bottom region and an upper region which are adjacent to each other, and the bottom region is located under the upper region; an ion implantation technology is performed, B ions and F ions are implanted into the fin part, and an implantation region is formed in the bottom region of the fin part; after the ion implantation technology, an annealing process is performed, the B ions and F ions in the implantation region are activated, and a doping region is formed in the bottom region of the fin part; after the annealing process is performed, a gate structure which stretches across and covers surfaces of side wall and top parts of the fin part is formed; and a source region and a drain region are formed in the fin part at two sides of the gate structure. The method provided by the invention improves a capability of resisting source leakage punchthrough of the fin type field effect transistor by preventing diffusion of boron ions in the doping region.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an N-type fin field effect transistor and a forming method thereof. Background technique [0002] MOS transistors generate switching signals by regulating the current through the channel region by applying a voltage to the gate. However, when the semiconductor technology enters the node below 32 / 28 nanometers, the control ability of the traditional planar MOS transistor to the channel current becomes weak, causing serious leakage current. Fin Field Effect Transistor (FinFET) is a new type of multi-gate device, which generally includes a semiconductor fin with a high aspect ratio, a gate structure covering part of the top and side walls of the fin, and a gate structure located on the gate. The source and drain regions in the fins on both sides of the structure, the gate structure of the fin field effect transistor can control the fins from the top and both sides, and ha...

AI Technical Summary

Problems solved by technology

[0004] However, the existing fin field effect transistors are prone to the problem of source-drain punch-through

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