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Top-emitting OLED device and preparation method thereof

A top-emitting device technology, applied in the field of lighting, can solve the problems of poor device efficiency, poor conductivity, high resistance, etc., and achieve the effect of eliminating plasma effect and viewing angle problem

Active Publication Date: 2016-03-30
BEIJING VISIONOX TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The organic electroluminescent device of the present invention is provided with a light scattering layer in its structure, so that the light emitted by the organic electroluminescent device is scattered at the interface of the light scattering layer, thereby significantly improving the viewing angle of the device; A light scattering layer is added between the electrodes. Due to the high resistance of the light scattering layer, the conductivity is very poor, resulting in poor device efficiency.

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  • Top-emitting OLED device and preparation method thereof

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Embodiment 1

[0031] The OLED device structure and preparation method are specifically described below, wherein the structure of the OLED device is: glass substrate / Ag(150nm) / TiO 2 (800nm) / ITO(150nm) / NPB(40nm) / ADN:TBPe(7%)(30nm) / Alq 3 (20nm) / Mg:Ag(30%)(20nm) / Ag(10nm).

[0032] Its preparation method is specifically as follows:

[0033] (1) take the transparent glass as the substrate, and make a layer of 150nm Ag metal thereon as the reflective metal layer;

[0034] (2) Make a layer of scattering layer on the reflective metal layer, the thickness of the scattering layer is 800nm, wherein the process of making the scattering layer includes:

[0035] a) Dispersion process: put 15g of titanium dioxide, 1.2g of dispersant (afcma-4010), 60g of solvent (propylene glycol methyl ether acetate), and put the prepared solution into the grinding tank, fix the grinding tank and grinding column, add 90ml of zirconium beads (note: the amount of zirconium beads depends on the volume of the grinding tank)...

Embodiment 2

[0040] The structure of the OLED device is: glass substrate / Au(150nm) / SiO(3um) / IZO(1um) / NPB(40nm) / ADN:TBPe(7%)(30nm) / Alq 3 (20nm) / Mg:Ag(30%)(20nm) / Ag(10nm).

[0041] Its preparation method is specifically as follows:

[0042] (1) take transparent glass as the substrate, and make a layer of 150nm Au metal on it as the reflective metal layer;

[0043] (2) Fabricate a layer of silicon oxide scattering layer on the reflective metal layer. The thickness of the scattering layer is 3um. The manufacturing method is to spin-coat the silicon oxide dispersion liquid through a conventional photolithography process, and spin-coat to form a film.

[0044] (3) After the silicon oxide scattering layer is fabricated, a 1-micron IZO transparent electrode layer is prepared by a DC magnetron sputtering method. After the IZO transparent electrode layer is prepared, the IZO transparent electrode layer is etched by an etching method.

[0045] (4) Put the organic functional layer and the second ele...

Embodiment 3

[0047] The structure of the OLED device is: glass substrate / Pt(150nm) / ZrO 2 (300nm) / PEDOT:PSS(300nm) / NPB(40nm) / ADN:TBPe(7%)(30nm) / Alq 3 (20nm) / Mg:Ag(30%)(20nm) / Ag(10nm). Its preparation method is specifically as follows:

[0048] (1) take transparent glass as the substrate, and make a layer of 150nm Pt metal thereon as the reflective metal layer;

[0049] (2) Make a layer of ZrO on the reflective metal layer 2 The scattering layer, the thickness of the scattering layer is 300nm, is spin-coated by a conventional photolithography process, and spin-coated to form a film.

[0050] (3) ZrO 2 After the scattering layer is fabricated, a layer of PEDOT:PSS is spin-coated with a thickness of 300nm using a conventional photolithography process. After the transparent PEDOT:PSS electrode layer is prepared, the transparent electrode layer is etched out by an etching method.

[0051] (4) Put the organic functional layer and the second electrode layer into the evaporation chamber for e...

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Abstract

The invention provides a top-emitting OLED device and a preparation method thereof. The top-emitting OLED device includes a substrate, a reflective metal layer, an organic functional layer and a second electrode layer in sequence, a scattering layer and a transparent electrode layer are also arranged between the reflective metal layer and the organic functional layer, both sides of the scattering layer are in contact with the reflective metal layer and the transparent electrode layer, and the other side of the transparent electrode layer is in contact with the organic functional layer. According to the top-emitting OLED device provided by the invention, the scattering layer and the transparent electrode layer are arranged between the reflective metal layer and a luminous layer in sequence, and the scattering layer mainly eliminates a microcavity effect existing in a top-emitting device structure, thereby eliminating the problem of the visual angle of the device.

Description

technical field [0001] The invention relates to the field of lighting technology, in particular to a top-emitting OLED device and a preparation method thereof. Background technique [0002] OLED can be divided into bottom emission type and top emission type according to the light extraction method. The light of the top emission organic electroluminescent device is extracted from the top. In order to maximize the light extraction efficiency, the device generally adopts a high reflectivity The metal is used as the bottom reflector, and the top is a transparent or semi-transparent electrode for light emission. However, when using a transparent electrode, the high energy in the process of making the electrode will cause damage to the organic layer; using a semi-transparent electrode will cause multiple round trips. The microcavity effect generated by the reflection causes serious viewing angle problems. [0003] Chinese patent document CN102468444A discloses an organic electrol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56H01L51/52H01L51/54
Inventor 段炼董艳波张国辉王静吴海燕胡永岚
Owner BEIJING VISIONOX TECH
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