Method for preparing aluminum alloy sputtering target material

A technology of sputtering target material and aluminum alloy, which is applied in sputtering plating, metal material coating process, ion implantation plating, etc., can solve problems such as complex process, and achieve the effect of improving uniformity and uniform structure

Active Publication Date: 2016-04-27
GRIKIN ADVANCED MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These methods require special equipment,

Method used

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  • Method for preparing aluminum alloy sputtering target material
  • Method for preparing aluminum alloy sputtering target material
  • Method for preparing aluminum alloy sputtering target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] 1. Select an Al-0.5wt% Cu alloy ingot, and age the ingot at 300°C for 8 hours.

[0038] 2. Perform axial and radial die forging on the ingot.

[0039] 3. Recrystallization annealing, the annealing temperature is 300°C, and the holding time is 2h.

[0040]4. Carry out cold rolling, the deformation amount is more than 70%, and the deformation amount of each pass is 15%, the purpose is to further refine the grain and enhance the {200} orientation content of the sputtering surface.

[0041] 5. Recrystallization annealing, the annealing temperature is 300°C, and the holding time is 2h, to obtain a uniform and refined recrystallization microstructure.

[0042] Determination of the microstructure of the obtained target, the results are as follows figure 2 As shown, it can be seen that the grain size has been significantly refined, the average grain size is about 47.33 μm, and the size distribution is uniform.

Embodiment 2

[0044] 1. Select an Al-1wt% Si alloy ingot, and age the ingot at 400° C. for 16 hours.

[0045] 2. Perform axial and radial die forging on the ingot.

[0046] 3. Recrystallization annealing, the annealing temperature is 450°C, and the holding time is 3h.

[0047] 4. Carry out cold rolling, the deformation amount is more than 70%, and the deformation amount of each pass is 10%, the purpose is to further refine the grain.

[0048] 5. Recrystallization annealing, the annealing temperature is 420°C, and the holding time is 2h, to obtain a uniform and refined recrystallization microstructure.

[0049] Determination of the microstructure of the obtained target, the results are as follows image 3 As shown, it can be seen that the grain size has been significantly refined, the average grain size is about 38.85 μm, and the size distribution is uniform.

Embodiment 3

[0051] 1. Select an Al-5wt% Cu alloy ingot, and age the ingot at 450° C. for 24 hours.

[0052] 2. Perform axial and radial die forging on the ingot.

[0053] 3. Recrystallization annealing, the annealing temperature is 450°C, and the holding time is 2h.

[0054] 4. Carry out cold rolling, the deformation amount is more than 70%, and the deformation amount of each pass is 15%, the purpose is to further refine the grain.

[0055] 5. Recrystallization annealing, the annealing temperature is 450°C, and the holding time is 2h, to obtain a uniform and refined recrystallization microstructure.

[0056] Determination of the microstructure of the obtained target, the results are as follows Figure 4 As shown, it can be seen that the grain size has been significantly refined, the average grain size is about 20.21 μm, and the size distribution is uniform.

[0057] From the analysis of the results of the above examples, it can be seen that the microstructure of the target prepared by ...

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Abstract

The invention discloses a method for preparing an aluminum alloy sputtering target material. The method comprises the following steps: (1) casting an aluminum alloy ingot by adoption of cold-die magnetic stirring; (2) performing partial homogenizing heat treatment on the aluminum alloy ingot, so as to form precipitated phases of which the diameters are 1-2 [mu]m respectively within the aluminum alloy ingot; (3) performing multi-ram die forging on the aluminum alloy ingot subjected to the partial homogenizing heat treatment, so as to refine crystalline grains; (4) carrying out intermediate annealing treatment to eliminate the forging stress; (5) carrying out cold rolling to further refine the crystalline grains and enhance the {200} orientation content of a sputtering surface; and (6) carrying out recrystallization annealing to obtain the aluminum alloy sputtering target material with uniform and refined recrystallization microstructures. The aluminum alloy sputtering target material obtained through the method has the advantages that the crystalline grains are fine and the uniformity of the microstructures is obviously improved.

Description

technical field [0001] The invention relates to a method for preparing an aluminum alloy sputtering target, and belongs to the technical field of target preparation. Background technique [0002] Aluminum alloy electronic films are used in the integrated circuit industry for functions such as electrode wiring and advanced packaging. As the line width of integrated circuits continues to be miniaturized, especially for the widespread use of 300mm high-density wafers, the requirements for the control of the microstructure of the target are more stringent. [0003] Adding an appropriate amount of alloying elements to high-purity aluminum, such as Cu, Si and other alloying elements, can improve the resistance to electromigration and stress migration of wiring. Aluminum alloy targets usually require fine grains, while the internal structure is stable and evenly distributed. However, there are a large number of dendritic structures and precipitated phases in aluminum alloy ingots...

Claims

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Application Information

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IPC IPC(8): C22C21/00B22D27/04C22F1/04C23C14/34
Inventor 罗俊锋王兴权熊晓东万小勇廖赞李勇军董亭义
Owner GRIKIN ADVANCED MATERIALS
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