Black titanium oxynitride powder and resin compound for semiconductor encapsulation using same

A technology of titanium oxynitride and semiconductor, which is applied in the field of resin compounds for semiconductor packaging, can solve problems such as soft errors and semiconductor device failures, and achieve the effects of suppressing failures, high α-ray shielding, and preventing insufficient blackness

Active Publication Date: 2017-11-24
MITSUBISHI MATERIALS ELECTRONICS CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, black titanium oxynitride powder may generate α-rays due to impurities (particularly lead) contained in ilmenite (the raw material of titanium oxide that becomes the raw material of black titanium oxynitride)
Using this ilmenite to produce titanium oxide powder, and further produce black titanium oxynitride powder, and when semiconductor elements are packaged by using black titanium oxynitride powder as a packaging material for fillers, if black titanium oxynitride powder generates α-rays , it is possible to cause semiconductor components to malfunction through alpha rays, that is, soft errors occur

Method used

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  • Black titanium oxynitride powder and resin compound for semiconductor encapsulation using same

Examples

Experimental program
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Effect test

Embodiment

[0028] Next, examples of the present invention will be described in detail together with comparative examples.

[0029]

[0030] First, white titanium oxide powder (TiO 2 ) is reduced by ammonia gas (reducing gas) to obtain a powder matrix of black titanium oxynitride. Here, the reduction reaction time (contact time of the white titanium oxide powder and ammonia gas) was set to 120 minutes. The powder precursor of the black titanium oxynitride is composed of the chemical formula: TiN X o Y (where X=0.3, Y=0.9). 12 mol of ethanol was added as alcohol to 0.1 mol of the powder precursor, and the powder precursor was dispersed in ethanol and wet-milled with a bead mill to obtain a dispersion of the powder precursor with an average primary particle diameter of 150 nm. Next, after adding 6 moles of ethanol for concentration adjustment to the dispersion liquid of the powder matrix, add 1×10 -2 moles of tetramethylorthosilicate was used as the silica source for the formation of...

Embodiment 2

[0032] Add 2×10-2 moles of tetramethyl orthosilicate, and as an alkali source (reaction initiator) add 1×10 -3 mol of sodium hydroxide, except that, the powder matrix obtained in the same manner as in Example 1 is coated with a silicon dioxide film with a thickness of 3.50 nm, and the volume resistivity is 9.00×10 6 Ω·cm black titanium oxynitride powder. This black titanium oxynitride powder was used as Example 2.

Embodiment 3

[0034] Add 3×10 -2 moles of tetramethyl orthosilicate, and as an alkali source (reaction initiator) add 1×10 -3 Mole of potassium hydroxide, except that, the powder matrix obtained in the same manner as in Example 1 is coated with a silicon dioxide film with a thickness of 5.90 nm, and the volume resistivity is 1.00×10 7 Black titanium oxynitride powder above Ω·cm. This black titanium oxynitride powder was used as Example 3.

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Abstract

The surface of the black titanium oxynitride powder of the resin compound for semiconductor encapsulation of the present invention is covered with a silicon dioxide film having a thickness of 2.5 to 12 nm. In addition, in the state of the green compact pressed at a pressure of 5 MPa, the volume resistivity of the black titanium oxynitride powder was 1×10 5 Ω·cm or more. Moreover, the lightness index L* value of the black titanium oxynitride powder in the CIE1976L*a*b* color space (light source C for measurement: color temperature 6774K) is 14 or less.

Description

technical field [0001] The invention relates to a black titanium oxynitride powder covered by a silicon dioxide film and a resin compound for semiconductor encapsulation using the black titanium oxynitride powder as a filler. In addition, this international application claims priority based on Japanese Patent Application No. 261156 (Japanese Patent Application No. 2013-261156) filed on December 18, 2013, and uses all the contents of Japanese Patent Application No. 2013-261156 in this international application. . Background technique [0002] In the past, a carbon black colorant for semiconductor encapsulation materials has been disclosed. After the carbon black is subjected to wet oxidation treatment, it is filtered through a filter sieve with a pore size of 5 μm or less, and then sprayed with carbon black whose carbon black content is concentrated and adjusted to 3 to 50% by mass. The slurry was obtained by drying, wherein the sieve residue with a pore size of 25 μm was 0%...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L63/00C01G23/00C08K3/28C08K9/06C08L101/00H01L23/29H01L23/31
CPCC08L63/00H01L2924/0002H01L23/295C01B21/0821C01P2006/40C01P2006/62C08K9/02C08G59/621C08G59/686C08K3/28C08K3/36C08K9/06C08K2003/2241H01L2924/00C01B33/12C01G23/00
Inventor 影山谦介石黑茂树
Owner MITSUBISHI MATERIALS ELECTRONICS CHEM CO LTD
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