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White light-emitting diode and preparation method thereof

A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of white light color temperature rise, etc., and achieve the effects of less saturation and high absorption and conversion efficiency

Active Publication Date: 2016-05-04
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this technology relies on point defects in the material, and the luminescence of point defects is easy to saturate under high current, which eventually leads to an increase in the color temperature of white light as the injection current increases.

Method used

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  • White light-emitting diode and preparation method thereof
  • White light-emitting diode and preparation method thereof
  • White light-emitting diode and preparation method thereof

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Experimental program
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Embodiment Construction

[0025] The white light emitting diode of the present invention and its manufacturing method are described in detail below in conjunction with schematic diagrams, so as to fully understand and implement the process of how to apply technical means to solve technical problems and achieve technical effects in the present invention.

[0026] see figure 1 , the epitaxial structure of the white light emitting diode in the first preferred embodiment of the present invention, including from bottom to top: substrate 110, non-doped nitride layer 120, n-type nitride layer (ie electron injection layer) 130, yellow Optical quantum well 140 , n-type barrier layer 150 , active layer 160 , p-type barrier layer 170 , p-type nitride layer 180 (ie hole injection layer) and p-type contact layer 190 . Wherein, the emission wavelength of the active layer 160 is 435nm-465nm, and the emission peak wavelength corresponding to the quantum well 140 is 550-580nm.

[0027] see figure 2 ,for figure 1 ...

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Abstract

The invention provides a chip-level white light-emitting diode and a preparation method thereof. A yellow light excitation layer formed by a quantum well is formed on the upper surface or the lower surface of a normal blue light quantum well; partial blue light emitted from the blue light quantum well excites the yellow light excitation layer to emit a yellow light; and a white light is formed after mixing, so that a white light chip free of fluorescent powder is achieved. According to the chip-level white light-emitting diode, the blue light is emitted by an active layer under electric injection; the emitted blue light excites a yellow light quantum well to emit the yellow light; matching with the active layer is mainly considered during current injection; and the amount of the blue light emitted from the active layer reaches the maximum value for the best. Meanwhile, the yellow light quantum well is high in absorption conversion efficiency and not easy to saturate; the color temperature of the white light formed after mixing does not deviate along with an increase of the injected current.

Description

technical field [0001] The invention relates to the field of semiconductor lighting, in particular to a chip-level white light emitting diode and a manufacturing method thereof. Background technique [0002] At present, the technical routes of using LEDs to realize white light sources are as follows: The first is to use red, green, and blue LEDs to mix and output white light. Due to the different attenuation speeds of LEDs of different colors, the control circuit is complicated and costly. High; the second is to use single-color LEDs with phosphors to achieve white light output, such as using blue LEDs to excite yellow phosphors, or ultraviolet LEDs to excite tri-primary phosphors. However, the stability of phosphors and the control of color temperature are both It is technically difficult and has high requirements for the packaging process. The third is to use a single chip without phosphors to achieve white light, which is expected to overcome the defects of the above tec...

Claims

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Application Information

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IPC IPC(8): H01L33/04H01L33/00
CPCH01L33/0075H01L33/04
Inventor 朱学亮张洁邵小娟杜成孝刘建明徐宸科
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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