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MEMS (Micro-Electro-Mechanical System) device, manufacturing method thereof and electronic device

An electronic device and device technology, applied in the field of MEMS devices and their preparation, can solve the problems of abnormal MEMS device morphology, deviation of graphic definition, and performance of MEMS devices that affect yield, and achieve low cost, improved definition, and improved yield. Effect

Active Publication Date: 2016-05-11
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the preparation process of MEMS devices, deep etching is often used, so in the photolithography process, thicker and thicker photoresist PR is required as a barrier, and the increase in the thickness of PR will lead to some trenches (such as for Depositing sacrificial materials and releasing the pattern definition of the removed pattern (ReleaseHold) deviates, resulting in abnormal morphology of the MEMS device, affecting the yield (Yield) and the performance of the MEMS device

Method used

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  • MEMS (Micro-Electro-Mechanical System) device, manufacturing method thereof and electronic device
  • MEMS (Micro-Electro-Mechanical System) device, manufacturing method thereof and electronic device
  • MEMS (Micro-Electro-Mechanical System) device, manufacturing method thereof and electronic device

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preparation example Construction

[0040]At present, in the fabrication process of MEMS devices, due to the selection of thicker and thicker photoresist PR as a barrier, the increase in the thickness of PR will lead to deviations in the graphic definition of some grooves (such as the pattern ReleaseHold used to deposit sacrificial materials and release the removal). , leading to abnormal morphology of MEMS devices, affecting yield (Yield) and performance of MEMS devices.

[0041] Therefore, it is necessary to further improve the manufacturing method of the current MEMS device in order to eliminate the above-mentioned problems.

Embodiment 1

[0043] In order to solve the problems existing in the prior art, the present invention provides a kind of preparation method of MEMS device, below in conjunction with attached Figure 2a-2d The method is described further.

[0044] First, step 201 is performed to provide a MEMS wafer 201 on which a photoresist layer 202 is formed.

[0045] Specifically, such as Figure 2b As shown, the MEMS wafer 201 can be made of semiconductor materials such as silicon, polysilicon or SiGe, and is not limited to a certain one.

[0046] In the present invention, the MEMS device may be a sensor, such as a pressure sensor, an acceleration sensor, etc., or a MEMS microphone, or other types of MEMS devices, and is not limited to a certain one.

[0047] Wherein, a photoresist layer 202 is formed on the MEMS wafer, wherein the photoresist layer 202 has a larger thickness to serve as a barrier in the subsequent deep etching, and its thickness is not limited to a certain numerical range, and can be...

Embodiment 2

[0073] In order to solve the problems existing in the prior art, the present invention provides a kind of preparation method of MEMS device, below in conjunction with attached Figures 3a-3e The method is described further.

[0074] First, step 201 is performed to provide a MEMS wafer 301 on which a photoresist layer 302 is formed.

[0075] Specifically, the MEMS wafer 301 may be made of semiconductor materials such as silicon, polysilicon or SiGe, and is not limited to a certain one.

[0076] In the present invention, the MEMS device may be a sensor, such as a pressure sensor, an acceleration sensor, etc., or a MEMS microphone, or other types of MEMS devices, and is not limited to a certain one.

[0077] Wherein, a photoresist layer 302 is formed on the MEMS wafer, wherein the photoresist layer 202 has a larger thickness to serve as a barrier in the subsequent deep etching, and its thickness is not limited to a certain numerical range, and can be Set according to the depth ...

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Abstract

The invention relates to an MEMS (Micro-Electro-Mechanical System) device, a manufacturing method thereof and an electronic device. The method comprises the following steps: S1, providing an MEMS wafer, wherein a photoresist layer is formed on the MEMS wafer; S2, selecting a corrected layout to perform photo processing on the photoresist layer in order to form patterns in the photoresist layer, wherein the corrected layout can compensate for pattern deformation caused by inclination of the photoresist layer after the photo processing; and S3, etching the MEMS wafer by taking the photoresist layer as a mask in order to transfer the patterns into the MEMS wafer. The manufacturing method has the advantages that 1, an extra mask or process does not need to be added, so that the cost is low; 2, the definition of MEMS graphs is improved through change of a current layer graph; and 3, the performance of an MEMS product is improved, and the yield is increased.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular, the invention relates to a MEMS device, a preparation method thereof, and an electronic device. Background technique [0002] For the increasing demand for high-capacity semiconductor storage devices, the integration density of these semiconductor storage devices has attracted people's attention. In order to increase the integration density of semiconductor storage devices, many different methods have been adopted in the prior art, such as by reducing the wafer size. And / or change the internal structure unit to form multiple memory units on a single wafer. For the method of increasing the integration density by changing the unit structure, attempts have been made to reduce the unit area. [0003] In the field of electronic consumption, multi-function devices are more and more popular among consumers. Compared with devices with simple functions, the production process of multi-functio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/02B81C1/00
Inventor 郑超王伟刘炼李卫刚许继辉
Owner SEMICON MFG INT (SHANGHAI) CORP