A physical vapor deposition method

Abstract

The present invention provides a physical vapor deposition method, which includes the following steps: step S1, place the substrate on the chuck, turn on the power supply of the upper electrode and keep the power supply of the lower electrode turned off, and deposit a first thickness on the entire surface of the substrate Or, make the substrate on the chuck, turn on the upper electrode power supply and the lower electrode power supply, deposit the first thickness of the conductive film on the entire surface of the substrate, and set the distance and distance between the pressure ring and the chuck The output power of the lower electrode power supply is within the preset range to meet the requirements of avoiding the occurrence of sparking phenomenon; step S2, make the pressure ring fix the substrate on the chuck, and the pressure ring passes through the conductive film of the first thickness and the substrate electrical connection, turn on the power supply of the upper electrode and the power supply of the lower electrode, and deposit a conductive film with a second thickness on the surface of the substrate, so that the substrate can complete the deposition of a conductive film with a target thickness. The physical vapor deposition method provided by the invention can avoid sparking phenomenon.

Description

Technical field [0001] The invention belongs to the technical field of microelectronic processing, and specifically relates to a physical vapor deposition method. Background technique [0002] Through silicon via (TSV) technology is the latest technology to achieve interconnection between chips by making vertical conduction between chips and between wafers and wafers. Because TSV technology can make The chip has the highest stacking density in the three-dimensional direction, the shortest interconnection line between the chips, the smallest size, and greatly improves the performance of chip speed and low power consumption, becoming the most advanced technology in the current electronic packaging technology. [0003] The physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) process is applied in the TSV technology, and is mainly used to deposit a barrier layer and a copper seed layer in a through silicon via. Because the thickness of the film deposit...

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Problems solved by technology

[0006] For this reason, in order to avoid the sticking phenomenon, the pressure claw 121 of the pressure ring 12 adopts such as Figure 4 As shown, wherein, the lower surface of the pressing claw 121 near the edge of the substrate is used to overlap the edge region of the substrate, the lower surface of the pressing claw 121 near the center of the substrate and the lower surface of the pressing claw 121 near the edge of the substrate There is a vertical distance H between the lower surfaces, which makes it difficult for metal ions to deposit in the gap formed by the distance H, thus making it difficult for the pressing jaw 121 to be bonded to the substrate S through a film, although this can avoid the occurrence of sticking Phenomenon, but it will cause the pressure ring 121 to be unable to be electrically connected with the substrate S, thus the equipotential between the pressure ring 121 and the substrate cannot be realized, which will cause a sparking phenomenon

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