Production method of groove type MOSFET

A manufacturing method and trench-type technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as device failure, weak gate oxide layer, and easily damaged trench MOSFETs

Active Publication Date: 2016-05-11
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of manufacturing method of trench MOSFET, for solving the problem of using phosphoric acid etching to remove anti-reflection coating in the manufacturing process of existing trench MOSFET. , will etch and remove a part of the silicon on the surface of the trench, forming pits and other damage on the surface of the trench, making the subsequent gate oxide layer formed on the surface of the trench relatively weak, and easily damaged during testing or use. The problem that causes the failure of the entire trench MOSFET device

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  • Production method of groove type MOSFET
  • Production method of groove type MOSFET
  • Production method of groove type MOSFET

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Embodiment Construction

[0048] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0049] see figure see Figure 7 to Figure 15 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, although only the components related to the present invention are shown in the diagrams rather than the number, shape and Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementa...

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Abstract

The invention provides a production method of a groove type MOSFET. A silicon oxide protection layer can be formed on side walls and a bottom part of a groove after forming of a groove and before removing of anti-reflection coating, and the anti-reflection coating can be removed by adopting phosphoric acid after being heated to a certain temperature for corrosion, and the damages on the side walls and the bottom part of the groove caused by the phosphoric acid can be prevented; and the silicon oxide protection layer can be removed after removing the anti-reflection coating, and then the gate oxide layer formed in the groove can be provided with the higher quality. The failure of the groove type MOSFET device caused by the gate and source leakage channels, which are formed because of the damages during the test or the use, can be prevented.

Description

technical field [0001] The invention belongs to the field of manufacturing semiconductor devices, and relates to a method for manufacturing a trench MOSFET. Background technique [0002] MOSFET (Metal-Oxide-SemiconductorField-EffectTransistor, Metal-Oxide Semiconductor Field-Effect Transistor) has the advantages of fast switching speed, good frequency performance, high input impedance, low driving power, good temperature characteristics, and no secondary breakdown problem. It is widely used in 4C (Communication, Computer, Consumer, Car: communication, computer, consumer electronics, automobile) and other fields. [0003] The vertical trench MOSFET is to form some MOSFET devices in the trenches that have been produced in the substrate, so that it has the advantages of high integration density, high current capability, low on-resistance and excellent turn-off characteristics. Due to the size and performance advantages mentioned above, vertical trench MOSFETs are rapidly becom...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/28
Inventor 刘义李征
Owner SEMICON MFG INT (SHANGHAI) CORP
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