GaN HEMT device manufacture method

Abstract

The invention provides a GaN HEMT device manufacture method which provides a substrate. The GaN HEMT device manufacture method includes the following steps of: S1, depositing a catalyst layer for the VLS growth on the substrate; S2, forming a periodic imprint glue on the catalyst; S3, etching the catalyst according to the distribution of the imprint glue, and forming a periodic graphical catalyst; S4, employing a VLS growth mechanism, growing GaN nanometer columns on the graphical catalyst; S5, removing the graphical catalyst, and forming a graphical substrate; and S6, growing an epitaxial layer on the graphical substrate, and finishing the manufacture of a source electrode, a drain electrode and a gate electrode on the epitaxial layer. The GaN HEMT device manufacture method employs the graphical substrate to perform the GaN epitaxy, has the advantage that the graphical substrate epitaxy cross growth has little defect, and avoids the problems that the cross growth is easy to form holes due to the large graph size in a growth process and the follow-up manufacture and usage are thus influenced. The introduction of the VLS is in favor of raising the epitaxial quality of a transition layer, and the GaN HEMT device performance is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a GaNHEMT device manufacturing method. Background technique [0002] As a typical representative of wide bandgap semiconductors, GaN has the characteristics of wider bandgap width, higher saturation electron drift velocity, larger critical breakdown electric field strength, better thermal conductivity, etc., and more importantly, it is compatible with AlGaN It can form AlGaN / GaN heterojunction, which is convenient for manufacturing HEMT devices. [0003] At present, large-area GaN substrate materials are still immature. GaN devices are mostly grown on Si substrates, sapphire substrates, and SiC substrates. Due to differences in lattice constants and thermal expansion coefficients, defects are easily formed at the interface of heteroepitaxy. , thus affecting the epitaxial quality, leading to a decrease in device performance. Taking the commonly used SiC...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a GaNHEMT device manufacturing method aimed at the deficiencies of the prior art, which can well solve the problem that the existing semiconductor devices adopt ordinary substrate epitaxial lateral growth with many defects

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