A method for high and low temperature controllable wafer bonding using a semiconductor refrigeration chip

Abstract

The invention provides a high and low temperature controllable wafer bonding method through a semiconductor refrigeration sheet. The method comprises the steps that a wafer is fit on a wafer pressing head; the cold surface of the semiconductor refrigeration sheet is fit with the wafer pressing head for cooling the wafer; bonding is performed under the pressure effect of the pressing head; the hot surface of the semiconductor refrigeration sheet is fit with the wafer pressing head for heating the wafer; and annealing is performed. The bonding process of the wafer is intervened through the cold surface of the semiconductor refrigeration sheet, temperature of the wafer is reduced by the mode of heat conduction and gas near the surface of the wafer is enabled to be liquefied, and then R-OH of original holes is connected through the bridging effect of water molecules under the effect of dual factors of certain external force and the water molecules so that formation of wafer pre-bonding holes can be reduced and even eliminated; besides, temperature of the bonded wafer is increased by the mode of heat conduction through the hot surface of the semiconductor refrigeration sheet so that annealing is completed under certain temperature, and thus the objectives of further reducing the number of the holes and increasing strength of a wafer bonding interface can be achieved.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and relates to a method for bonding high and low temperature controllable wafers by using a semiconductor refrigerating sheet. Background technique [0002] In recent years, while the manufacturing industry is pursuing high performance devices, the integration of multifunctional electronic / optical / biomedical devices has also become one of the key driving forces for new electronic products. Joining (also known as "bonding") technology is an irreplaceable and important link in the integration of diverse and complex systems. With the continuous advancement of semiconductor process technology, the manufacturing industry is developing in the direction of high-volume and low-cost. Because direct bonding of large-area wafers can simplify the device manufacturing process and reduce production costs, it has increasingly attracted the attention of the industry. [0003] The traditional wafer bon...

AI Technical Summary

Problems solved by technology

Since the wafer itself has a certain warpage (~10 microns), the pre-bonding process is often due to insufficient water molecule adsorption on the wafer surface, and the gap between the warped wafer surfaces is too large (beyond the effect of van der Waals force or hydrogen bond) range), which resulted in pre-bonded wafers with large areas of unbonded areas and defects

These problems are difficult to improve only by subsequent annealing process

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