Semiconductor light emitting device and semiconductor light emitting device having semiconductor light emitting device

Abstract

The present invention provides a semiconductor light emitting device and a semiconductor light emitting device having the semiconductor light emitting device. The semiconductor light emitting device may include: a light emitting structure including a first conductivity type semiconductor layer having an upper surface divided into a first region and a second region, a second region disposed on the first conductivity type semiconductor layer in order The active layer on the upper surface and the semiconductor layer of the second conductivity type; the first contact electrode, which is arranged on the first region of the semiconductor layer of the first conductivity type; the second contact electrode, which is arranged on the semiconductor layer of the second conductivity type on; a first electrode pad electrically connected to the first contact electrode and having at least a portion disposed on the second contact electrode; a second electrode pad electrically connected to the second contact electrode; and a multilayer reflective structure , which is interposed between the first electrode pad and the second contact electrode, and includes a plurality of dielectric layers having different refractive indices and stacked alternately.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application claims priority to Korean Patent Application No. 10-2014-0165567 filed in the Korean Intellectual Property Office on Nov. 25, 2014, the disclosure of which is incorporated herein by reference in its entirety. technical field [0003] Apparatuses consistent with exemplary embodiments relate to semiconductor light emitting devices and semiconductor light emitting apparatuses including the semiconductor light emitting devices. Background technique [0004] A light emitting diode (LED) is a device that includes a material that emits light when electrical energy is applied to it, wherein energy generated by electron-hole recombination in a semiconductor junction is converted into light emitted therefrom. LEDs are generally used as light sources in lighting devices, display devices, and the like, and thus, the development of LEDs has been accelerated. [0005] With the recent accelerated development of galli...

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Problems solved by technology

[0006] In general, since the limitation of the flip-chip LED is that the electrode pad is widely disposed on the surface on which the LED is mounted, which absorbs the light emitted from the active layer, the external light extraction efficiency will decrease

In addition, since the electrode pad is large, it may not be possible to ensure insulation with respect to contact electrodes having different polarities provided on the lower part.

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